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Magnetoresistance of doped silicon

Antonio Ferreira da Silva, Alexandre Levine, Zahra Sadre Momtaz, Henri Boudinov, and Bo E Sernelius

Phys. Rev. B 91, 214414 (2015)). Published  9 June 2015

DOI:10.1103/PhysRevB.91.214414

We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-non-metal transition. The results are compared to those from a many-body theory where the donor-electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.


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Last updated: 06/15/15