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Device Physics Lab, IFM

Responsible: Chun-Xia Du; Jörgen BengtssonJeanette Nilsson; Mikael Syväjärvi.

The Device Physics Laboratory is a clean room facility for scientists/researchers at IFM and external users from institutes/companies on micro fabrication, micro electronics, organic electronics, etc.

Associated external users are Inficon.

The processes are adaptable to users requests

The DPL is a class 1000 clean room with class 100 in the lithography room. The total area is about 225 m2.

  • Photolithographic masks are prepared with an exposure resolution of 3-4 micron. Exposure is done with a Direct Laser Writer mask pattern pattern generator: Heidelberg DWL66.
     
  • Photolithograpy can be carried out in a class 100 area. Mask aligner (Karl Suss MJB3 Contact Aligner), hot plates and spincoaters are available under yellow light conditions.
     

    The Suss MJB 3 UV300 mask aligner is designed for the high-resolution photolithography in a laboratory or pilot production, which offers widely flexibility in the handling of irregularly shaped substrate of differing thicknesses, as well as standard size wafers up to 3-inch diameter. It is equipped with a mercury short-arc lamp350W lamp. Different optical filtering and diffraction reducing element are used to produce exposure a narrow wavelengths 365-420nm, and resolution of the HP mode is 0.8 microns under optimum conditions. Adjusted the exposure light to ~10mW/cm2 by 365nm, uniformity 3%. Three exposure modes can be performed. (1) ST mode (Standard hard contact). Nitrogen is used to press the substrate against the mask during exposure. (2) Soft contact. The substrate is pressed against the mask only by mechanical pressure while vacuum under substrate is retained. (3) HP (high-pressure) vacuum contact mode. A vacuum is pulled between mask and substrate immediately prior to exposure. The highest resolution is obtained in HP mode, since the gap between substrate and mask due to flatness variations, dust particles, etc., is as small as possible. This machine has potential to reach even shorter exposure wavelength of 280-350nm and a resolution of 0.4 microns under optimum condition when new Xe lamp and different optics are used.

  • Metal deposition is done with a DC magnetron sputter, and in RF mode insulators may be deposited. Sumultaneous deposition of two metals is done in the co-sputtering mode.
     
  • Surface topography and waveness, as well as measuring roughness in the sub-nanometer range can be profiled with a new advanced surface profiler, Dektak 6M. It is capable of of measuring steps below 100Å up to 262 µm, both for thin and thick film step height measurements.
     
  • In addition to wet etching, dry etching may be performed with Reactive Ion Etching.
     
  • Silicon dioxide and silicon nitride is grown with a plasma-enhanced CVD system.
     
  • Annealing, oxidation and diffusion is performed in controlled environment.

       

 

Size: 5.4M bytes Modified: 22 November 2016, 13:41


Responsible for this page: Chun-Xia Du
Last updated: 11/22/16