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Thin Film Growth

The nucleation and coalescence stages of film formation are largely decisive for the constitution and properties of a material. This holds true both for film/substrate interfaces and for layer/layer interfaces in heteroepitaxy and multilayer film growth. Particularly sensitive are the phase formed, crystallographic texture, threading defects in the layers, and in-plane residual stress. Subsequent growth typically requires growth to an appreciable film thickness before steady-state conditions are obtained if different from the nucleating layer. During the initial stages, the nuclei selection will be sensitive to the incoming flux (species and energy/flux distribution and their interaction with the substrate) and any contamination (e.g. residual gas in the vacuum system).

Since many years, we have taken a special interest in the growth and characterization of superlattices and multilayers the high density of constrained layers and interfaces alters the physical properties of the materialsAt the same time it offers possibilities to study the effects of reduced dimensionality and interfaces. We study superlattice systems from ceramic materials of nitrides, oxides, and carbides. The studies are aimed at understanding the growth mechanisms and thermal stability of as-deposited material, and explaining the mechanical behavior including large hardness enhancements of the layers.

As for film materials and model systems, we have selected ceramic materials of nitrides, oxides, and carbides, but study also metals.

Responsible for this page: Thomas Lingefelt
Last updated: 08/24/16