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Jens A.D. Jensen, PhD-thesis, "Engineering of Metal Microstructures; Process-Microstructure-Property Relationships for Electrodeposits", Linköping Dissertation no. 784, ISBN 91-7373-458-6, ISSN 0345-7524

A.E. Ĺbom, PhD-thesis, "Materials Design and Characterization of the Active Regions of Gas Sensitive Field-effect Devices", Dissertation No. 743, Linköping University , Linköping (2002), ISBN 91-7373-309-1

J. Rosén, "Characterization of metal plasma streams from arc discharges in a reactive environment", Lic. thesis, (2002)

J. Neidhardt "Materials Science of Magnetron Sputtered Fullerene-Like Carbon
Nitride Thin Films", LIC Thesis Nr. 992, (2002)

I. Arce Garcia, E.R. Berasategui, S.J. Bull and T.F. Page, N. Hellgren, J. Neidhardt and L.Hultman: How hard is fullerene-like CNx? Phil Mag. A 82 (2002) 2133.

M. Beshkova, Z. Zakhariev, J. Birch, A. Kakanakova, and R. Yakimova: "Properties of AlN layers grown by sublimation epitaxy," Mat. Sci. Forum (submitted 2002).

J. Birch, F. Eriksson, G. Johansson, and H. Hertz: "Recent Advances in Ion-Assisted Growth of Cr/Sc Multilayer X-Ray Mirrors for the Water Window," Vacuum 68 (3), 65-72 (2003).

E. Broitman, Zs. Czigany, L. Hultman, and B.C. Holloway: Structural and Mechanical Properties of DLC Films Deposited by DC Magnetron Sputtering, Submitted for publication.

E. Broitman, N. Hellgren, J. Neidhardt, I. Brunell, and L. Hultman: Electrical Properties of Carbon Nitride Thin Films: Role of Morphology and Hydrogen Content, Electronic Materials Letters 31(9) (2002) L11.

I. Brunell, J. Neidhardt, Zs. Czigány, and L. Hultman: In-situ Stress Measurement during Deposition of Fullerene-Like CNx Thin Films by Unbalanced Magnetron Sputtering; Formation of High Levels of Stress with 28 eV Ion Irradiation, Submitted for publication.

Zs. Czigany, J. Neidhardt, I.F. Brunell, and L. Hultman: Imaging of Fullerene-like Structures in CNx Thin Films by Electron Microscopy; Sample Preparation Artefacts from Ion-Beam Milling, Ultramicroscopy (2002) in press.

V. Darakchieva, J. Birch, M. Schubert, A. Kasic, S. Tungasmita, T. Paskova, and B. Monemar, "Strain related structural and vibrational properties of thin epitaxial AlN layers," Phys. Rev. B (submitted 2002).

V. Darakchieva, P. P. Paskov, T. Paskova, J. Birch, S. Tungasmita, and B. Monemar: "Deformation potentials of the E1(TO) mode in AlN," Appl. Phys. Lett. 80, 2302 (2002).

V. Darakchieva, J. Birch, P. P. Paskov, S. Tungasmita, and T. Paskova: "Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth," phys. stat. sol. (a) 190, 59-64 (2002).

A.P. Ehiasarian, R. New, W.-D. Münz, U. Helmersson, L. Hultman, and V. Kouznetsov: Influence of High-Power Densities on the Composition of Pulsed Magnetron Plasmas, Vacuum 65 (2002) 147.

A. P. Ehiasarian, W.-D. Münz, U. Helmersson, L. Hultman, and I. Petrov: High Power Pulsed Magnetron Sputtered CrNx Films, Surf. Coat. Technol. (2002) in press.

F. Eriksson, G. A. Johansson, H. M. Hertz, and J. Birch: "Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion-assisted sputter deposition," Optical Engineering 41 (11), 2903 (2002).

F. Eriksson, G. A. Johansson, H. M. Hertz, E. M. Gullikson, and J. Birch, "Significantly improved reflectance of Cr/Sc multilayer mirrors for the water window," Opt. Lett. (submitted 2002).

R. Gago , I. Jiménez, F. Agulló-Rueda, J.M Albella, Zs. Czigany, and L. Hultman: Transition from amorphous boron carbide to hexagonal boron carbonitride thin films induced by nitrogen ion assistance, J. Appl. Phys. 92 (2002).

J.T. Gudmundsson, J. Alami, and U. Helmersson, "Spatial and temporal behavior of the plasma parameters in a pulsed magnetron discharge", Surface and Coatings Technology 161, 249 (2002).

H. M. Hertz, G. A. Johansson, H. Stollenberg, J. de Groot, O. Hemberg, A. Holmberg, S. Rehbein, P. Jansson, F. Eriksson, and J. Birch: "Table-Top X-Ray Microscopy: Sources, Optics and Applications," J. Physique (submitted 2002).

Zs. J. Horváth, K. Jarrendahl, M. Ádám, I. Szabó, Vo Van Tuyen, M. Serényi, and Zs. Czigány: Electrical pecularities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures Appl. Surf. Science 190 (2002) 403-407.

H.W. Hugosson, G.E. Grechnev, R.A. Ahuja, U. Helmersson, and O. Eriksson, "Stabilisation of potential superhard RuO2 phases: A theoretical study", Phys.Rev.B, in press.

H.W. Hugosson, H. Högberg, M. Ahlgren, M. Rodmar, and T.I. Selinder: "A theoretical study on the effects of substitutions on the phase stabilities and electronic structure of TixAl1-xN" accepted for publication in, J. Appl. Phys.

A. Hörling, L. Hultman, M. Odén, J. Sjölén, and L. Karlsson: Thermal Stability of Arc Evaporated High-Aluminium Content Ti1-xAlxN Thin Films, J. Vac. Sci. Technol. A 20 (2002) 1815.

J.A.D. Jensen, Pawel Pocwiardowski , Per O.Ĺ. Persson, Lars Hultman , and Per Mřller: Electrochemical Nickel Deposition enhanced by Acoustic Streaming, Chem Phys. Lett. In press (2003).

J.A.D. Jensen, P. Mřller, T. Bruton, N. Mason, R. Russell, J. Hadley, P. Verhoeven and A. Mathewson: "Electrochemical Deposition of Buried Contacts in High-Efficiency Crystalline Silicon Photovoltaic Cells", J. Electrochem. Soc., in press.

J.A.D. Jensen, P.O.Ĺ. Persson, K. Pantleon, M. Odén, L. Hultman, and M.A.J. Somers: Electrochemically Deposited Nickel Membranes; Process-Microstructure-Property Relationships, Submitted for publication.

P. Jin, S. Nakao, G. Xu, M. Tazawa, K. Yoshimura, D. Music, J. Alami, U. Helmersson: Low temperature deposition of a-Al2O3 thin films by sputtering using a Cr2O3 structural template, J. Vac. Sci. Technol., in press.

H. Jacobson, R. Yakimova, P. Raback, M. Syväjärvi, J. Birch, and E. Janzen: "Lateral enlargement of silicon carbide crystals," Mat. Sci. Forum 389-393 (39) (2002).

H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén: "Dislocation evolution in 4H-SiC epitaxial layers," J. Appl. Phys. 91, 6354 (2002).

Ĺ. A. Johansson, B. Hjörvarsson, P. O. Ĺ. Persson, H. Kim, J. E. Greene, K. Järrendahl, H. Arwin, and J. Birch, "Sputtered p-type, intrinsic and n-type a-Si:H for p-i-n photodiodes," J. Appl. Phys. (submitted).

A. Kakanakova-Georgieva, P. O. Ĺ. Persson, U. Forsberg, J. Birch, L. Hultman, and E. Janzén: "Epitaxial Growth of AlN Layers on SiC Substrates in a Hot-Wall MOCVD System," Phys. Stat. Sol. (submitted 2002).

L. Karlsson, G. Ramanath, M. Johansson, A. Hörling, and L. Hultman: The influence of thermal annealing on residual stresses and mechanical properties of arc-evaporated TiCxN1-x (x = 0, 0.15 & 0.45) thin films,
Acta Materialia, 50 (2003) 5103.

N. Konofaos, E.K. Evangelou, Zhongchun Wang; V. Kugler, U. Helmersson, "Electrical characterisation of SrTiO3/Si interfaces", Journal of Non-Crystalline Solids 303, 185 (2002).

L. Landström, Zs. Márton, H. Högberg, M. Boman and P. Heszler: "In-situ monitoring of size-distributions and characterization of nanoparticles during W ablation in N2 atmosphere", submitted to Applied Physics A.

V. Leiner, H. Zabel, J. Birch, and B. Hjörvarsson, "Deuterium in 001-oriented Mo0.5V0.5/V: Density profile on the atomic level," Phys. Rev. B 66, 235413 (2002).

P. H. Mayrhofer, A. Hörling, L. Karlsson, J. Sjölén, C. Mitterer, L. Hultman: Self-Organized Nanostructures in the Ti1-xAlxN System;
Demonstration of Age Hardening in Wear Protective Coatings,
Submitted for publication.

C. Menon, A.-C. Lindgren, P.O.Ĺ. Persson, L. Hultman, and H.H. Radamsson: Selective Epitaxy of Si1-xGex Layers for CMOS Applications, Submitted for publication.

F.A. Mohammad, J. Birch, L. Hultman, and L.M. Porter: Growth and Characterization of Epitaxial InN on SiC by Sputter Deposition, Submitted for publication.

J.M. Molina-Aldareguia, S.J. Lloyd, W.J. Klegg, M. Odén, and L. Hultman: Deformation Structures under Indentations in TiN/NbN Single- Crystal Multilayers Depostited by Magnetron Sputtering at Different Substrate Bias, Phil. Mag. A 82 (2002) 1983.

J. Molina-Aldareguia, J. Emmerlich, J.-P. Palmquist, U. Jansson, and L. Hultman: Indentation Studies of Ti4SiC3 Thin Films, Submitted for publication.

D. Music, J. M. Schneider, V Kugler, S. Nakao, P. Jin, M. Östblom, L. Hultman, and U. Helmersson: Synthesis and Mechanical Properties of Boron Suboxide Thin Films, J. Vac. Sci. Technol. A20 (2002) 335.

D. Music, U. Kreissig, Z. Czigány, U. Helmersson, J.M. Schneider, "Elastic modulus-density relationship for amorphous boron suboxide thin films", Applied Physics A 76, 269 (2002).

D. Music, U. Kreissig, V. Chirita, J.M. Schneider, and U. Helmersson, "Elastic modulus of amorphous boron suboxide thin films studied by theoretical and experimental methods", J. Appl. Phys., in press.

D. Music, V.M. Kugler, Z. Czigány, A. Flink, O. Werner, J.M. Schneider, L. Hultman, and U. Helmersson, "The role of carbon in boron suboxide thin films", J.Vac.Sci.Tech.A, in press.

E.P. Münger, V. Chirita, L. Hultman, and J.E. Greene: Adatom/Vacancy Interactions and Interlayer Mass Transport in Small Two-Dimensional Pt Clusters on Pt(111), Submitted for publication.

J. Neidhardt, Zs. Czigány, I.F. Brunell, and L. Hultman: Growth of Fullerene-like CNx Thin Solid Films by Reactive Magnetron Sputtering;
Role of Low-Energy Ion Irradiation in Determining Microstructure and Mechanical Properties, J. Appl. Phys, in press (2003).

J.-P. Palmquist, J. Birch, and U. Jansson: "Deposition of epitaxial ternary transition metal carbide films," Thin Solid Films 405, 122 (2002).

J.-P. Palmquist, Zs. Czigány, L. Hultman, U. Jansson: Epitaxial growth of tungsten carbide films using C60 as carbon precursor, Submitted for publication.

J.-P. Palmquist, U. Jansson, T. Seppänen, P.O.Ĺ. Persson, J. Birch, L. Hultman, and P. Isberg: Deposition of Epitaxial Single-Phase Ti3SiC2 Thin Films, Appl. Phys. Lett. 81 (2002) 835.

J.-P. Palmquist, Zs. Czigany, M. Odén, J. Neidhart, L. Hultman, U. Jansson: Magnetron sputtered W-C films with C60 as carbon source,
Subm. J. Appl. Phys., Sept. (2002).

P.O.Ĺ. Persson, L. Hultman, R. Yakimova, M.S. Jansson, A. Hallén, W. Skurupa, and D. Panknin: On the Nature of Ion Implantation Induced Dislocation Loops in 4H Silicon carbide, J. Applied Physics, 92 (2002) 2501.

P.O.Ĺ. Persson, H. Jakobsson, E. Janzén, J. Molina-Alderaguia, W. Clegg. P. Bergman, and L. Hultman: Structural Defects in Degraded p-i-n SiC Diodes, Applied Physics Letters (2002) in press.

G. Radnóczi, G. Sáfrán, Zs. Czigány, T. Berlind, and L. Hultman: Structure of DC Sputtered Si-C-N Thin Films, Submitted for publication.

J. Rosén, A. Anders, L. Hultman, and J.M. Schneider: Temporal Development of the Plasma Composition of Metal Plasma Streams in a Reactive Environment, Submitted for publication.

J. Sundqvist, H. Högberg and A. Hĺrsta: "Atomic Layer Deposition of Ta2O5 by using the TaI5 and O2 precursor combination", submitted to Chemical Vapor Deposition.

S. Tungasmita, P.O.Ĺ. Persson, L. Hultman, and J. Birch: Pulsed Low-Energy Ion-Assisted Growth of Epitaxial Aluminum Nitride Thin Films on 6H-SiC Wafers by Reactive DC Magnetron Sputtering, J. Appl. Phys. 91 (2002) 3551.

E. Valcheva, T. Paskova, P.O.Ĺ. Persson, L. Hultman, and B. Monemar: Misfit Defect Formation in Thick GaN Layers Grown on Sapphire by Hydride Vapour Phase Epitaxy, Appl. Phys. Lett. 80 (2002) 1550.

S. Valizadeh, J.M. George, P. Leisner, and L. Hultman: Template Synthesis of Au/Co Multilayered Nanowires by Electrochemical Deposition, Submitted for publication.

S. Valizadeh, J.M. George, P. Leisner, and L. Hultman: Electrochemical Synthesis of Ag/Co Multilayer Nanowires in Porous Polycarbonate Membranes, Thin Solid Films 402 (2002) 262.

A. A. Voevodin, J. G. Jones, J. S. Zabinski, and L. Hultman: Plasma Characterization during Laser Ablation of Graphite in Nitrogen for the Growth of Fullerene-like CNx Films, J. Applied Physics 92 (2002) 724.

A. A. Voevodin, J. G. Jones, J. S. Zabinski, Zs. Czigŕny, and L. Hultman: Growth, Structure, and Properties of Fullerene-like CNx Thin Films Produced by Pulsed Laser Ablation of Graphite in Nitrogen Background,
J. Appl. Phys. 92 (2002) 4980.

X. Wang, S. Olafsson, L.D. Madsen, S. Rudner, I.P. Ivanov, A. Grishin, and U. Helmersson, Growth and characterization of Na0.5K0.5NbO3 thin films on polycrystalline Pt80Ir20 substrates, Journal of Materials Research 17, 1183 (2002).

Z. Wang, V. Kugler, U. Helmersson, N. Konofaos, E. K. Evangelou, S. Nakao and P. Jin, "Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering under various substrate temperatures" Philosophical Magazine B 82, 891 (2002).

Z. Wang, U. Helmersson, P.-O. Käll, "Optical properties of anatase TiO2 thin films prepared by aqueous sol -gel process at low temperature", Thin Solid Films 405, 50 (2002).

K. Yamamoto, M. Keunecke, K. Bewilogua, S. Czigany, and L. Hultman:
Structural Features of Thick c-BN Coatings Deposited via a Graded B-C-N- Interlayer, Surf. Coat Technol., 142-144 (2001) 881.; Addendum [Surf. Coat Technol. 153 (2002) 315]

A. Zocco, A. Perrone, E. Broitman, Zs. Czigány, L. Hultman, M. Anderle, and N. Laidani: Mechanical and Tribological Properties of CNx Films Deposited by Reactive Pulsed Laser Ablation,
Diamond and Related Materials, 11 (2002) 98.

A.E. Ĺbom, L. Hultman, M. Eriksson, and R. Twesten: Gas Sensitivity of Field-Effect Devices with Combinations of TiN and Pt as the Metal Layer, J. Vac. Sci. Technol. A20(3), in press (2002).

A. E. Ĺbom, P. Persson, L. Hultman, and M. Eriksson: Influence of Gate Metal Film Growth Parameters on the Properties of Gas-Sensitive Field-Effect Devices, Thin Solid Films 409 (2) (2002) 233.

A.E. Ĺbom, E. Comini, G. Sberveglieri, L. Hultman, and M. Eriksson: Thin Oxide Films as Surface Modifiers of MIS Field Effect Gas Sensors,
Sensors and Actuators, in press (2002).

A.E. Ĺbom, E. Comini, G. Sberveglieri, N. Finnegan, L. Hultman and M. Eriksson: "Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices ", Sensors and actuators B, in press 2002.

A.E. Ĺbom, R. T. Haasch, N. Hellgren, N. Finnegan, L. Hultman, and
M. Eriksson: Characterization of the metal-insulator interface of MIS
chemical sensors, submitted for publications.

A.P. Ehiasarian, W.-D. Münz, U. Helmersson, and L. Hultman: CrN Deposition by Reactive High Power Density Pulsed Magnetron Sputtering, Society of Vacuum Coaters, Proc. In press (2002).

A. Kakanakova-Georgieva, U. Forsberg, C. Hallin, P.O.Ĺ.Persson, L. Storasta, G. Pozina, J. Birch, L. Hultman and E. Janzén, Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC, Proc. Europ. Conf. Silicon Carbide and Relat. Mater., Linköping 2002.

T. Seppänen, J.-P.Palmquist, P.O.Ĺ. Persson, J.Emmerlich, J.Molina, J.Birch, U.Jansson, P.Isberg, L. Hultman: Structural Characterization of Epitaxial Ti3SiC2 Films, Proc. 53rd Annual Meeting of the Scandinavian Society for Electron Microscopy, Tampere, Finland 12-15 June, 2002 (Ed. J. Keränen and K. Sillanpää, University of Tampere, Finland, ISSN 1455-4518, 2002), p. 142-143.

T. Seppänen, S. Tungasmita, G. Z. Radnóczi, L. Hultman and J. Birch: Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering, European Conference on SiC and Related materials, 1-5 Sept 2002, Linköping, Sweden (manuscript submitted and accepted)

S. Tungasmita, P.O.Ĺ. Persson, T. Seppänen, L. Hultman, and J. Birch: Growth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition, Materials Science Forum Vols. 389-393, (Trans Tech Publ.,Switzerland, 2002) pp. 1481-1484.

J. Birch, S. Tungasmita, and V. Darakchieva, "Magnetron Sputter Epitaxy of AlN," in Nitrides as Seen by the Technology, edited by T. Paskova and B. Monemar (Research Signpost, Kerala, in print).

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Last updated: 05/06/08