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Publications 2001 - 2002

High-resolution Si 2p core-level study of the K/Si(111)-(3x1) surface

K. Sakamoto, H.M. Zhang, R.I.G. Uhrberg

Surface Review and Letters 9 (2), p.1235 (2002)

Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface

H.W. Yeom, K. Horikoshi, H.M. Zhang, K. Ono, R.I.G. Uhrberg
Physical Review B 65 (24), p.241307 (2002)

Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag/Si(111) surfaces

H.M. Zhang, K. Sakamoto, R.I.G. Uhrberg
Applied Surface Science 190 (1-4), p.103 (2002)

Determination of the bonding configuration of the metastable molecular oxygen adsorbed on a Si(111)-(7x7) surface

K. Sakamoto, F. Matsui, M. Hirano, H.W. Yeom, H.M. Zhang, R.I.G. Uhrberg
Physical Review B 65 (20), p.201309 (2002)

Bias-dependent scanning tunneling microscopy study of the oxygen-adsorbed Si(111)-(7x7) surface: Observation of metastable molecular oxygen

K. Sakamoto, S.T. Jemander, G.V. Hansson, R.I.G. Uhrberg
Physical Review B 65 (15), p.155305 (2002)

STM study of the C-induced Si(100)-c(4x4) reconstruction

S.T. Jemander, H.M. Zhang, R.I.G. Uhrberg, G.V. Hansson
Physical Review B 65 (11), p.115321 (2002)

Photoelectron spectroscopy study of Ag/Si(111)√3x√3 and the effect of additional Ag adatoms

R.I.G. Uhrberg, H.M. Zhang, T. Balasubramanian, E. Landemark, H.W. Yeom
Physical Review B 65 (8), p.081305 (2002)

Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers

T. Johansson, W.-X. Ni
Materials Science and Engineering B 89 (1-3), p.88 (2002)

Surface diffusion limited nucleation of Ge dots on the Si(001) surface

Y.H. Wu, C.Y. Wang, A. Elfving, G.V. Hansson, W.-X. Ni
Materials Science and Engineering B 89 (1-3), p.151 (2002)

Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer

E. Haq, W.-X. Ni, G.V. Hansson
Materials Science and Engineering B 89 (1-3), p.355 (2002)

Surface structure of Si(100) with submonolayer coverages of C

S.T. Jemander, H.M. Zhang, R.I.G. Uhrberg, G.V. Hansson
Materials Science and Engineering B 89 (1-3), p.415 (2002)

Identification of the basic structure of the Ag/Si(111)-(6x1) surface: Observation of a low-temperature c(12x2) phase

K. Sakamoto, H. Ashima, H.M. Zhang, R.I.G. Uhrberg
Physical Review B 65 (4), p.045305 (2002)

Core-level photoelectron spectroscopy study of the Au/Si(111) 5x2, alpha-√3x√3, beta -√3x√3, and 6x6 surfaces

H.M. Zhang, T. Balasubramanian, R.I.G. Uhrberg
Physical Review B 65 (3), p.035314 (2002)

A unified set of APIs for acquisition and processing of scanning probe microscope images

S.T. Jemander

Computer Standards & Interfaces 24 (1), p.29 (2002)

Surface electronic structure study of Au/Si(111) reconstructions: Observation of a crystal to glass transition

H.M. Zhang, T. Balasubramanian, R.I.G. Uhrberg

Physical Review B 66, p.165402 (2002)

Structural investigation of  Ca/Si(111) surfaces

K. Sakamoto, W. Takeyama, H. M. Zhang and R. I. G. Uhrberg

Physical Review B 66, p.165319 (2002)

Electronic structure of ultrathin Ge layers buried in Si(100)

P.O. Nilsson, S. Mankefors, J. Guo, J. Nordgren, D. Debowska-Nilsson, W.-X. Ni, G.V. Hansson
Physical Review B (Condensed Matter and Materials Physics) 64, p.115306/1 (2001)

X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (<or=100 nm) using a low temperature growth step

W.-X. Ni, K. Lyutovich, J. Alami, C. Tengstedt, M. Bauer, E. Kasper
Journal of Crystal Growth 227-228, p.756 (2001)

MBE-based SiGe/Si heterojunction multilayer structures

K. Li, J. Zhang, D. Liu, Q. Yi, L. Guo, S. Xu, W.-X. Ni
Journal of Crystal Growth 227-228, p.744 (2001)

1.54 mu m light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy

W.-X. Ni, C.-X. Du, F. Duteil, A. Elfving, G.V. Hansson
Optical Materials 17, p.65 (2001)

Er/O doped Si1-xGex alloy layers grown by MBE

F. Duteil, C.-X. Du, K. Jarrendahl, W.-X. Ni, G.V. Hansson
Optical Materials 17, p.131 (2001)

Efficient 1.54 (Micro)m light emission from Si/SiGe/Si:Er,O transistors prepared by differential MBE

C.-X. Du, F. Duteil, G.V. Hansson, W.-X. Ni
Materials Science & Engineering B (Solid-State Materials for Advanced Technology) B81, p.105 (2001)

Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

G.V. Hansson, W.-X. Ni, C.-X. Du, A. Elfving, F. Duteil
Applied Physics Letters 78, p.2104 (2001)

Si/SiGe/Si:Er:O light-emitting transistors prepared by differential molecular-beam epitaxy

C.-X. Du, F. Duteil, G.V. Hansson, W.-X. Ni
Applied Physics Letters 78, p.1697 (2001)

Interaction of metastable molecular oxygen with the dangling bonds of a Si(111)-(7x7) surface

K. Sakamoto, M. Hirano, H. Takeda, S.T. Jemander, I. Matsuda, K. Amemiya, T. Ohta, W. Uchida, G.V. Hansson, R.I.G. Uhrberg
Journal of Electron Spectroscopy and Related Phenomena 114-116, p.489 (2001)

An STM study of the surface defects of the √3x√3-Sn/Si(111) surface

S.T. Jemander, N. Lin, H.M. Zhang, R.I.G. Uhrberg, G.V. Hansson
Surface Science 475, p.181 (2001)

Surface electronic structure of the √3x√3, square √39x√39 and 6x6 surfaces of Ag/Ge(111): observation of a metal to semiconductor transition

H.M. Zhang, T. Balasubramanian, R.I.G. Uhrberg
Applied Surface Science 175-176, p.237 (2001)

Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the√3x√3, √39x√39, and 6x6 surfaces

H.M. Zhang, T. Balasubramanian, R.I.G. Uhrberg
Physical Review B 63, p.195402/1 (2001)

Comprehensive study of the metal/semiconductor character of adatom-induced Ag/Si(111) reconstructions

H.M. Zhang, K. Sakamoto, R.I.G. Uhrberg

Physical Review B 64, p.245421 (2001).

High resolution core-level spectroscopy of Si(100)c(4x2) and some metal induced Si(111)√3x√3 surfaces

R.I.G. Uhrberg

J. Phys. Cond. Matter 13, p.11181 (2001).


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Last updated: 09/06/13