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Publications 1996 - 1998

1.54 mu m Light emission from Er/O and Er/F doped Si p-i-n diodes grown by molecular beam epitaxy

W.-X. Ni, C.-X. Du, K.B. Joelsson, G. Pozina, G.V. Hansson
Journal of Luminescence 80, p.309 (1998)

Er-doped edge emitting devices with a SiGe waveguide

C.-X. Du, W.-X. Ni, K.B. Joelsson, F. Duteil, G.V. Hansson
Journal of Luminescence 80, p.329 (1998)

Luminescence from Si-Si1-xGex/Si1-yCy-Si structures

K.B. Joelsson, G. Pozina, W.-X. Ni, C.-X. Du, G.V. Hansson
Journal of Luminescence 80, p.497 (1998)

Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells

T.P. Sidiki, A. Ruhm, W.-X. Ni, G.V. Hansson, C.M.S. Torres
Journal of Luminescence 80, p.503 (1998)

Injection of self-interstitials during sputter depth profiling of Si at room temperature

J. Cardenas, B.G Svensson, W.-X. Ni, K.B. Joelsson, G.V. Hansson
Applied Physics Letters 73, p.3088 (1998)

Optimization of growth conditions for strained Si/Si1-yCy structures

K.B. Joelsson, W.-X. Ni, G. Pozina, L. Hultman, G.V. Hansson
Thin Solid Films 321, p.15 (1998)

Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy

W.-X. Ni, G.V. Hansson, J. Cardenas, B.G. Svensson
Thin Solid Films 321, p.131 (1998)

Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

W.-X. Ni, K.B. Joelsson, C.X. Du, G. Pozina, I.A. Buyanova, W.M. Chena, G.V. Hansson, B. Monemar
Thin Solid Films 321, p.223 (1998)

Characterization of strained Si/Si1-yCy structures prepared by molecular beam epitaxy

K.B. Joelsson, W.-X. Ni, G. Pozina, L.A.A. Pettersson, T. Hallberg, B. Monemar, G.V. Hansson
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 16, p.1621 (1998)

Properties of Er-related emission in in situ doped Si epilayers grown by molecular beam epitaxy

I.A. Buyanova, W.M. Chen, G. Pozina, W.-X. Ni, G.V. Hansson, B. Monemar
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 16, p.1732 (1998)

On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy

W.M. Chen, I.A. Buyanova, G. Pozina, B. Monemar, W.-X. Ni, G.V. Hansson
Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 16, p.1928 (1998)

Growth of strained Si/Si1-yCy/Si1-xGex structures by MBE

K.B. Joelsson, W.-X. Ni, G. Pozina, L Hultman, G.V. Hansson
Vacuum 49, p.185 (1998)

Electronic structure of the Si-rich 3C-SiC(001)3x2 surface

H.W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, R.I.G. Uhrberg
Physical Review B 58, p.10540 (1998)

Electronic structure of the√3x√3-alpha and 3x3 periodicities of Sn/Ge(111)

R.I.G. Uhrberg, T. Balasubramanian
Physical Review Letters 81, p.2108 (1998)

Low-temperature photoemission study of the surface electronic structure of Si(111)7x7

R.I.G. Uhrberg, T. Kaurila, Y.-C. Chao
Physical Review B 58, p.R1730 (1998)

2p-3d resonant photoemission in Ti metal

T. Kaurila, R.I.G. Uhrberg, J. Väyrynen
Journal of Electron Spectroscopy and Related Phenomena 88-91, p.399 (1998)

Adsorption of Rb on Si(100)2x1 at room temperature studied with photoelectron spectroscopy

Y.-C. Chao, L.S.O. Johansson, R.I.G. Uhrberg
Applied Surface Science 123-124, p.76 (1998)

Electroluminescence study of Si-Si1-xGex/Si1-yCy-Si p-i-n diode structures

K.B. Joelsson, W.-X. Ni, C.-X. Du, G.V. Hansson
Materials and Devices for Silicon-Based Optoelectronics. Symposium p.169 (1998)

Electroluminescence studies of Si bulk materials using Al-Si Schottky diodes

C.-X. Du, W.-X. Ni, K.B. Joelsson, Shen Guang-Di, G.V. Hansson
Materials and Devices for Silicon-Based Optoelectronics. Symposium, p.157 (1998)

MBE growth and characterization of Er/O and Er/F doped Si light emitting structures

W.-X. Ni, C.-X. Du, K.B. Joelsson, G.V. Hansson, G. Pozina, I.A. Buyanova, W.M. Chen, B. Monemar
Materials and Devices for Silicon-Based Optoelectronics. Symposium, p.133 (1998)

Analysis and simulation of the low-temperature performance of Si-SiGe HBTs for the integrated infrared receiver

Zhao Lixin, Xu Chen, Gao Guo, Zou Deshu, Chen Jianxin, Shen Guangdi, W.-X. Ni, G.V. Hansson
Proceedings of the SPIE - The International Society for Optical Engineering, p.112 (1998)

Influence of growth conditions on the thermal quenching of photoluminescence from SiGe/Si quantum structures

I.A Buyanova, W.M. Chen, W.-X. Ni, G.V. Hansson, B. Monemar
Epitaxy and Applications of Si-Based Heterostructures. Symposium,  p.295 (1998)

Design, processing and characterization of Si-based light emitting devices for opto-electronic interconnect applications

C.-X. Du
LiU-TEK-LIC-1998:39, Licenciate thesis, 1998

Characterization of Si-based heterostructures prepared by MBE and containing Ge, C, or Er

K.B. Joelsson
Dissertation No 556, 1998

Electrical and structural characterization of PtSi/p-Si1-xGex low Schottky barrier junctions prepared by co-sputtering

O. Nur, M. Willander, R. Turan, H.H. Radamson, G.V. Hansson and M.R. Sardela Jr
J. Vac. Sci. Technology B 15, 241 (1997)

Controlling the strain and light emission from Si-Si1-xGex quantum dots

Y.-S. Tang, S.E. Hicks, W.-X. Ni, C.M. Sotomayor Torres, G.V. Hansson and C.D.W. Wilkinson
Thin Solid Films 294, 308 (1997)

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 (m light emission

W.-X. Ni, K.B. Joelsson, C.-X. Du, I.A. Buyanova, G. Pozina, W.M. Chen, G.V. Hansson, and B.Monemar
Appl. Phys. Lett. 70, 3383 (1997)

Si1-yCy/Si(100) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

K.B. Joelsson, W.-X. Ni, G. Pozina, H.H. Radamson, and G.V. Hansson
Appl. Phys. Lett. 71, 653 (1997)

Room temperature 1.54 (m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

C.-X. Du, W.-X. Ni, K.B. Joelsson, and G.V. Hansson
Appl. Phys. Lett. 71, 1023 (1997)

High resolution X-ray diffraction mapping studies of the domain structure of single crystal substrate and its influence on SrTiO film growth

X. Wang, U. Helmersson,  J. Birch , and W.-X. Ni
J. Crystal Growth 171, 401 (1997)

Core-level study of  the K/Si(100)c(4x2) system: Beyond the room temperature saturation coverage

Y-C Chao, L S O Johansson and R I G Uhrberg
Surf. Sci. 372, 64 (1997)

Adsorption of Na on Si(100)2x1 at room temperature, studied with photoelectron spectroscopy

Y-C Chao, L S O Johansson and R I G Uhrberg
Phys. Rev. B 55, 7198 (1997)

Electronic structure of Rb-adsorbed Si(100) surfaces studied with angle-resolved photoemission

Y-C Chao, L S O Johansson and R I G Uhrberg
Phys. Rev. B 55, 7667 (1997)

Photoemission study of Na growth on the Si(100)c(4x2) below  room temperature

Y-C Chao, L S O Johansson and R I G Uhrberg
Surface Science 391, p.237 (1997)

Windows and photocathodes for a high resolution solid state band pass UV photon detector for inverse photoemission

F Schedin, G Thornton and R I G Uhrberg
Rev. Scientific Instr. 68, 41 (1997)

Layer growth of Cs on Si(100)c(4x2) studied with photoelectron spectroscopy

Y-C Chao, L S O Johansson and R I G Uhrberg
Phys. Rev. B56, 15 446 (1997)

Surface core-levels of the 3C-SiC(001)3x2 surface: Atomic origins and surface reconstruction

H W Yeom, Y-C Chao, S Terada, S Hara, S Yoshida and R I G Uhrberg
Phys. Rev. B56, 15 525 (1997)

Temperature dependence of time resolved electroluminescence of Er/O doped Si light emitting structures prepared by molecular beam epitaxy

W.-X. Ni, C.-X. Du, K.B. Joelsson, and G.V. Hansson
J. Vacuum Sci. and Technol. B, submitted (1997)

X-ray reflectivity calculations of interdiffusion and photoluminescence experiments in Si/ Si1-xGex low dimensional structures

T.Sidiki, C.M. Sotomayor Torres, W.-X. Ni, G. Pozina, G.V. Hansson, and A. Ribayrol
J. Vacuum Sci. and Technol. B, submitted (1997)

Important role of non-radiative defects in Si and SiGe/Si structures grown by molecular beam epitaxy

W.M. Chen, I.A. Buyanova, W.-X. Ni, G.V. Hansson, and B. Monemar
J. Vacuum Sci. and Technol. B, submitted (1997).

Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: role of non-radiative defects

I.A. Buyanova, W.M. Chen, G. Pozina W.-X. Ni, G.V. Hansson, and B. Monemar
Appl. Phys. Lett. 71, p.3676 (1997)

Si-based heterostructures prepared by MBE

Kenneth B. Joelsson
LiU-TEK-LIC-1997:61, Licenciate thesis, 1997

Hall Factor and Drift Mobility for Holes in Strained SiGe Alloys

K.B. Joelsson, Y. Fu,  W.-X. Ni, and G.V. Hansson

J. Appl. Phys. 81, 1264 (1997).

Lattice distortion in dry-etched Si/SiGe quantum dot arrays studied by 2D-reciprocal space mapping using synchrontron X-ray diffraction

W.-X. Ni,  J. Birch , Y.S. Tang, K.B. Joelsson, C. Sotomayor-Torres, Kvick, and G.V. Hansson
Thin Solid Films 294, 304 (1997)

Strain characterization of Ge1-xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

H.H. Radamson, K.B. Joelsson, W.-X. Ni,  J. Birch , J.-E. Sundgren, and G.V. Hansson
J. Crystal Growth 167, 495 (1996)

Silicon-based structures for IR light emission

G.V. Hansson, W.-X. Ni, K.B. Joelsson, and I.A. Buyanova
Physica Scripta T69, 60 (1996)

Low Schottky barrier junctions on strained p-Si1-xGex for infrared detection

O. Nur, M. Willander, R. Turan, M.R. Sardela Jr, and G.V. Hansson
Physica Scripta T69, 250 (1996)

Room temperature electroluminescence of nanofabricated Si-Si1-xGex quantum dot diodes

Y.-S. Tang, C.M. Sotomayor Torres, W.-X. Ni,  and G.V. Hansson
Superlattices and Microstructures 20, 505 (1996)

Si/SiGe heterostructures - recent advances and a challenge for future device technology

W.-X. Ni and G.V. Hansson
J. Materials. Sci  35, 354 (1996)

Angle-dependence of the spin-orbit branching ratio

E. L. Bullock, R. Gunnella, C.R. Natoli, H.W. Yeom, S. Kono, L. Patthey, R.I.G. Uhrberg and L.S.O. Johansson
Surf. Sci. 352-354, 352 (1996)

Surface core-level shift photoelectron diffraction from As/Si(111)

L.S.O. Johansson, R. Gunnella, E. L. Bullock, C.R. Natoli, and R.I.G. Uhrberg
Appl. Surf. Sci. 104/105, 88 (1996)

Coverage-dependent study of the Cs/Si(100)2x1 surface using photoelectron spectroscopy

Y.-C. Chao, L.S.O. Johansson, and R.I.G. Uhrberg
Phys. Rev. B 54, 5901 (1996)

The As/Si(111) surface studied by angle scanned low energy photoelectron diffraction

R. Gunnella, E. L. Bullock, C.R. Natoli, R.I.G. Uhrberg and L.S.O. Johansson
Surf. Sci. 352-354, 332 (1996)

Surface core level shift, low-energy photoelectron diffraction: A determination of the As/Si(111) surface

R. Gunnella, E. L. Bullock, R.I.G. Uhrberg, C.R. Natoli, and L.S.O. Johansson
Vuoto XXV, No. 3, 33 (1996)


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Last updated: 09/06/13