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Summary of Plamen Paskov's activities


My research interests are in the field of fundamental optical properties of semiconductors, optical characterization techniques and physics of optoelectronic devices. The main focus of the recent activities is the properties of group-III nitride semiconductor (GaN, InN, AlN) and their ternary alloys. Applying a variety of photoluminescence- and cathodoluminescence-based techniques, bulk materials, epitaxial layers, heterostructures, quantum wells, superlattices, as well as device structures are studied. The main achievements that are well-recognized worldwide include understanding of the fine structure of free- and bound excitons in GaN, identification of optical signatures of the point and structural defects, studying effect of the strain, doping and surface polarity on the emission spectra and quantum efficiency of epitaxial layers and quantum structures. The project I am currently working on is focused on emission properties of InGaN/GaN quantum wells grown along nonpolar and semipolar crystallographic orientations on bulk GaN substrates, patterned GaN templates and GaN nanowires. The goal is to find a way for fabrication of structures for light emitting devices with enhanced internal quantum efficiency in the green spectral region. 

Selected publications

Complete list of peer-reviewed articles at researcherID.com (ISI).

Current teaching

Undergraduate Courses
  • TFYY54 Nanophysics (6 ECTS) for Y4, MMFYS and MPN, course designer, lecturer and examiner

PhD Courses

  • Group-III nitrides – properties, fabrication and device applications (5 ECTS), course designer, lecturer and examiner
Plamen Paskov
Associate Professor (Docent)

Senior Lecturer


E-mail: plapa@ifm.liu.se
Phone: +46 (0)13 28 26 88

Room G324 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden


ORCID: 0000-0003-2602-1523


Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14