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Summary of Pitsiri Sukkaew's activities

Research

My research aims to understand the complex phenomena related to SiC CVD process utilizing computational modeling. Computational modeling has become a crucial tool for CVD studies due to its high temperature and pressure range which obstruct capability of in situ measuring techniques available today. This research employs computational fluid dynamics (CFD) and quantum chemical calculations based on ab initio theory and density functional theory (DFT) in comparison to the experimental results yielded under similar conditions. The knowledge of its physicochemical nature and parameter dependency will provide possibility to control and design optimal conditions for SiC epitaxial growth to be used in different applications.

Left: C2H2 concentration profile (in cgs unit) downstream from susceptor front (along x direction). Right: SiH2 concentration profile (in cgs unit) downstream from susceptor front (along x direction)

Selected publications & conference contributions

Pitsiri Sukkaew
PhD

Postdoc

CONTACT

E-mail: pitsu@ifm.liu.se
Phone: +46 (0)13 28 26 52

Office
Room K201 (Physics Building)

Address
Semiconductor Materials, IFM
Linköping University
SE-58183
Linköping, Sweden

SUPERVISORS

Erik Janzén, main
Örjan Danielssonco
Olle Kordinaco
Lars Ojamäeco

MISCELLANEOUS

 


Responsible for this page: Fredrik Karlsson
Last updated: 02/11/14