Summary of Pitsiri Sukkaew's activities
My research aims to understand the complex phenomena related to SiC CVD process utilizing computational modeling. Computational modeling has become a crucial tool for CVD studies due to its high temperature and pressure range which obstruct capability of in situ measuring techniques available today. This research employs computational fluid dynamics (CFD) and quantum chemical calculations based on ab initio theory and density functional theory (DFT) in comparison to the experimental results yielded under similar conditions. The knowledge of its physicochemical nature and parameter dependency will provide possibility to control and design optimal conditions for SiC epitaxial growth to be used in different applications.
Selected publications & conference contributions
- Shortcomings of CVD modeling of SiC today
Ö. Danielsson, P. Sukkaew, L. Ojamäe, O. Kordina, and E. Janzén
Theoretical Chemnistry Accounts 132, 1398 (2013)
- Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
Ö. Danielsson P. Sukkaew, M. Yazdanfar, O. Kordina, and E Janzén
Materials Science Forum 740-742, 213 (2013) pdf available
A more complete list of publications can be found at DiVA LiU E-press.
Responsible for this page: Fredrik Karlsson
Last updated: 02/11/14