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Publications

2016

Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry using 4 degree off-cut Substrates

Louise Lilja, Jawad ul Hassan, Erik Janzén and Peder Bergman, Materials Science Forum 858 (2016) 209-212.

2015

In-Grown Stacking-Faults in 4H-SiC Epilayers Grown on 2 degree off-cut Substrates

Louise Lilja, Jawad ul Hassan, Erik Janzén and Peder Bergman, Physica Status Solidi B. 252 (2015) 1319-1324.

2014

Improved Epilayer Surface Morphology on 2˚  Off-Cut 4H-SiC Substrates

Louise Lilja, Jawad ul Hassan, Erik Janzén and Peder Bergman, Materials Science Forum 778-780 (2014) 206-209.

Carrier Lifetime Controlling Defects  Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Ian D. Booker, Jawad ul Hassan, Louise Lilja, Franziska C. Beyer, Robin Kahru, Peder Bergman, Örjan Danielsson, Olle Kordina, Einar Ö. Sveinbjörnsson and Erik Janzén, Crystal Growth and Design 14 (2014) 4104-4110 .

Fast Growth Rate Epitaxy on 4˚ Off-Cut 4-Inch Diameter 4H-SiC Wafers

Jawad ul Hassan, Heung Taek Bae, Louise Lilja, Ildiko Farkas, Ickchan Kim, Pontus Stenberg, Jian Wu Sun, Olle Kordina, Peder Bergman, Seo Yong Ha and Erik Janzén, Materials Science Forum 778-780 (2014) 179-182. 

Oxidation Induced  ON 1, ON 2a/b Defects in 4H-SiC Characterized by DLTS

Ian D. Booker, Hassan Abdalla, Louise Lilja, Jawad ul Hassan, Peder Bergman, Einar Ö. Sveinbjörnsson and Erik Janzén, Materials Science Forum 778-780 (2014) 281-284.

Comparison of Carrier Lifetime Measurements and Mapping in 4H-SiC Using Time Resolved Photoluminescence and µ-PCD

Birgit Kallinger, Mathias Rommel, Louise Lilja, Jawad ul Hassan, Ian D. Booker, Erik Janzén and Peder Bergman, Materials Science Forum 778-780 (2014) 301-304.

2013

Influence of Growth Conditions on Carrier Lifetime in 4H-SiC Epilayers

Louise Lilja, Ian D. Booker, Jawad ul Hassan, Erik Janzén and Peder Bergman, Journal of Crystal Growth 381 (2013) 43-50.

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Louise Lilja, Jawad Hassan, Ian Booker, Peder Bergman and Erik Janzén, Materials Science Forum 740-742 (2013) 637-640.

On-axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

Jawad Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén, Materials Science Forum 740-742 (2013) 173-176.

2012

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

Louise Lilja, Jawad Hassan, Ian Booker, Peder Bergman and Erik Janzén, Materials Science Forum 717-720 (2012) 161-164.

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Jawad Hassan, Louise Lilja, Ian Booker, Peder Bergman and Erik Janzén, Materials Science Forum 717-720 (2012) 157-160.

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation  

Peder Bergman, Ian Booker, Louise Lilja, Jawad Hassan and Erik Janzén, Materials Science Forum 717-720 (2012) 289-292.


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Last updated: 06/02/16