Summary of Einar Sveinbjörnsson's activities
1. Defect engineering in SiC devices
The aim is to develop methods to significantly improve minority carrier lifetime and reduce surface recombination in Si face 4H-SiC epilayers. Bipolar SiC devices are today severely hampered by the short carrier lifetime due to recombination centers (defects) in epilayers. Currently we work mainly with high temperature oxidation and subsequent annealing of silicon carbide which has a strong impact on the carrier lifetime.
2. Electrical properties of graphene grown on SiC
Here we investigate the electronic properties of graphene for possible microwave transistor applications. The focus is on physical understanding of the interaction of charge carriers in graphene with the underlying substrate and the gate dielectric used for top-gated devices.
- Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interfacer
E. Ö. Sveinbjörnsson, F. Allerstam, P. G. Hermannsson and S. Hauksson
Materials Science Forum 740-742, pp. 749-752 (2013)
- Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
I. D. Booker, J. Hassan, A. Hallén, E. Ö. Sveinbjörnsson, O. Kordina, J. P. Bergman
Materials Science Forum 717-720, pp.285-288 (2012)
Complete list of publications articles at Google Scholar.
Current supervision of students
- Ian Booker, main supervisor
- Electrical characterization of semiconductor materials and devices (5 ECTS)
Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14