Summary of Chamseddine Bouhafs's activities
My research is focused on growth and studies of fundamental properties of epitaxial graphene on SiC using high-temperature sublimation. The major goal is to develop electronic grade graphene with homogeneous thickness and electronic properties over large area. I am studying the effect of growth conditions, substrate polytype and polarity, as well as surface treatment on electronic transitions, Landau levels and free-charge carrier mobility and density in epitaxial graphene. In my work I use extensively spectroscopic ellipsometry, Raman scattering spectroscopy and the unique Optical Hall effect.
Selected publications & conference contributions
- Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
C. Bouhafs, V. Darakchieva , I. L. Persson , A. Tiberj , P. O. Å. Persson , M. Paillet , A. Zahab, P. Landois , S. Juillaguet , S. Schöche , M. Schubert , R.Yakimova
Journal of Applied Physics 117, 085701 (2015)
- Morphological and electronic properties of epitaxial graphene on SiC
R. Yakimova, T. Iakimov, G. R. Yazdi, C. Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert, and V. Darakchieva
Physics B, 439, 59 (2014)
Supervision of master students
- Ingemar Persson: "Interface investigation of graphene grown on carbon-terminated 4H-SiC by cross-sectional transmission electron microscopy"
- Chun Yi Chen: "Spectroscopic ellipsometry study of epitaxial graphene and effect of oxygen treatment"
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Last updated: 03/05/15