Hide menu

Summary of Anelia Kakanakova's activities


Project and Research leader ground-laying platform for fundamental materials research and development of group III nitrides by MOCVD at Linköping University: 2003 VR Junior Researcher Position Grant; 2006 KAW Equipment Grant Contactless Mobility Measurement System; 2008 VR University Lecturer Position Grant;

Commission of R&D hot-wall MOCVD reactor (process temperatures of up to 1600 °C for the growth of AlN) in collaboration with Aixtron AB, A Member of Aixtron Group and with the support from 2004 KAW Equipment Grant (co-applicant to Professor E. Janzén); 

Research leader development of AlGaN HEMT epi-wafers at Linköping University: Swedish–Dutch Consortium SiC/GaN: a technology for military microwaves under the lead of FOI, Sweden and TNO-FEL, The Netherlands, concluded year 2006;

Research leader material development of AlN-based epitaxial structures at Linköping University, SSF-project III-Nitrides for Advanced UV and High-Frequency Applications, concluded year 2011;  

Project and Research leader resolving the doping limitations in the ultimate wide band gap semiconductor AlN and high-Al-content AlGaN: 2011 VINNMER VINNOVA Fellowship Grant; 2014 VR Research Grant; 2015 ÅFORSK Research Grant;

Coordinator Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications: 2015 EU FLAG-ERA JTC  in synergy with the FET Graphene Flagship;

Read more about previous research...

Selected publications

  • Reactivity of adducts relevant to the deposition of hexagonal BN from first-principles calculations
    R. R. Q. Freitas, G. K. Gueorguiev, F. de Brito Mota, C. M. C. de Castilho, S. Stafström, and A. Kakanakova-Georgieva
    Chemical Physics Letters 583, 119 (2013)
  • Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
    D. Nilsson, E. Janzén and A. Kakanakova-Georgieva
    Appl. Phys. Lett. 105, 082106 (2014)
  • Exciton luminescence in AlN triggered by hydrogen and thermal annealing
    M. Feneberg, N.T. Son, and A. Kakanakova-Georgieva,
    Applied Physics letters 106, 242101 (2015)

Current teaching

PhD Courses
Anelia Kakanakova
Associate Professor (Docent)

Senior Lecturer



E-mail: anelia@ifm.liu.se
Phone: +46 (0)13 28 26 49

Room N412 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden



ResearcherID: L-1142-2014

Co-organizer of Symposium I, Low-dimensional systems based on graphene and III-nitrides at the XIII Brazilian MRS Meeting (XIII SBPMat), 2014; Chair of Plenary session;

Invited Speaker
Gordon Research Conferences, Frontiers of Science: Defects in Semiconductors,
2014, August 03-08, Bentley University in Waltham MA United States

Recent publications
Dalton Trans. 44, 3356 (2015)
J. Phys. Chem. C 119 23599 (2015)
Phys. Status Solidi B 252 1306 (2015)

Responsible for this page: Fredrik Karlsson
Last updated: 12/10/15