Hide menu


Available Diploma Projects


Master Diploma Projects

  • Synthesis of AlN nanowires on SiC/Graphene substrates
    Epitaxial graphene layers will be used as a template for growth of AlN nanowires. This project is based on our preliminary results on growth of bulk and AlN nanowires on SiC substrates. The main aim of this project is synthesis of AlN nanowires array on monolayer and few layer graphene grown on SiC substrates. Graphene layers will be used to improve the growth method for controlling the initial nucleation of AlN nanowires to increase their density and alignment. To study the effect of step bunching and density of step’s kinks on density of grown AlN nanowires etched SiC substrate with annealing also will be used for growth of graphene. This diploma work will include both growth and characterization of AlN nanowires on SiC/Graphene substrates.
    Contact person: G. Reza Yazadi
  • The effect of oxygen on epitaxial graphene on SiC
    The aim of this project is study of surface morphology, structure and electronic modifications of epitaxial graphene layers for different steps of the oxidation process. We also want to check if oxygen partially can decouple the buffer layer from the substrate and hence reduce the effect of SiC substrate to graphene layers. This diploma work will include different characterization techniques of graphene layers on SiC substrates before and after oxidation. 
    Contact person: G. Reza Yazadi
  • Atomic-level patterns in layer structures based on AlN
    Aluminum nitride (AlN) is being established as the ultimate solid-state semiconductor material (wide-band-gap ~ 6 eV, Nature 2006), as well as 2D material system (reduced band-gap ~ 3 eV) following theoretical calculations and very recently reported experimental proof.  AlN deposition in the fashion of thin layers or nanosheets proceeds in interaction with respective substrate. Presently, we apply metal organic chemical vapor deposition (MOCVD) of AlN on silicon carbide (SiC) as a substrate. Various atomic-level patterns can be given rise in layer structures based on AlN, which can be identified at the AlN/SiC interface, within doped thin layers, etc. We target understanding of the basic mechanisms which govern the formation of such atomic-level patterns, their properties, and motivated by applications ranging from (nano) optoelectronics to managing significantly better the heat dissipation in the AlGaInN-based light-emitting diodes. Several topics can be selected within the general description above with either experimental or theoretical inclination.
    Contact person: Anelia Kakanakova
  • Graphene growth on SiC and its characterization
    The project is based on the growth of graphene on SiC substrates using conventional SiC chemical vapor deposition reactor. It also involves characterization of graphene using atomic force microscopy, optical microscopy, contactless measurements of charge carrier density and mobility as well as micro-Raman spectroscopy. Students with background in physics and material science can contact us for this master’s thesis project.  
    Contact person: Jawad ul Hassan
  • Growth of graphene and its industrial production approach
    We have developed a high temperature growth process of graphene on silicon carbide. This is transferred to an industrial production with Graphensic AB that is a spin-off company from Semiconductor Materials division. We seek a materials science and growth interested master thesis student in growth of graphene and production oriented research.
    Read more at www.liu.se/senmat. Contact person: Mikael Syväjärvi.
  • Growth of cubic silicon carbide
    Cubic silicon carbide may be a new material for transistors, solar cells and novel structures with graphene. A challenge is the growth and reproducibility. We have developed a novel approach, the Cubic Sublimation Method (CSM), for growth of this material. We seek a materials science and growth interested master thesis student in growth of cubic silicon carbide.
    Read more at www.liu.se/senmat. Contact person: Mikael Syväjärvi.
  • Landau Level spectroscopy in graphene on SiC
    Unique ellipsometry measurements at mid-infrared and far-infrared wavelengths in magnetic field allow the determination of Landau levels even in one monolayer graphene samples.  This diploma work will include measurements and analysis of Landau level spectroscopy in graphene layers with different thicknesses in order to determine their electronic properties, defects and transport properties. The final goal is to develop material suitable for novel THz large-scale processor technologies for future fast electronics applications.
    Contact person: Vanya Darakchieva
  • Simulations of Chemical Vapor Deposition processes
    Through chemical vapor deposition (CVD) a thin film of high quality is created from gaseous source materials. This process takes place at high temperature and often reduced pressure, and it involves many different physical phenomena – from fluid flow dynamics to radiative and convective heat transfer, from high temperature chemical reactions to crystal growth. Using Computational Fluid Dynamics (CFD), where chemical reactions both in the gas-phase and on surfaces can be included, the process can be studied in great detail. In this project CFD shall be used to investigate and analyze how changes to process parameters and geometry may impact the flow and temperature patterns as well as deposition distributions in a CVD reactor. Students with an interest in modeling, fluid dynamics and thin film growth shall contact us for this master thesis project.
    Contact person: Örjan Danielsson

Responsible for this page: Fredrik Karlsson
Last updated:03/31/15