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1994

A.M. Frens, M.T. Bennebroek, A. Zakrzewski, J. Schmidt, W.M. Chen, E. Janzén, J.L. Lindström and B. Monemar:

Observation of rapid direct charge transfer between deep defects in silicon.

Phys. Rev. Lett. 72, 2939 (1994).


W.M. Chen, B. Monemar, E. Janzén, A.M. Frens, M.T. Bennebroek and J. Schmidt:

Direct determination of the electron-electron-hole Auger threshold energy in silicon.

Phys. Rev. Lett. 73, 3258 (1994).


W.M. Chen, P. Dreszer, A. Prasad, A. Kurpiewski, W. Walukiewicz, E.R. Weber, E. Sörman, B.Monemar, B.W. Liang and C.W. Tu:

Origin of n-type conductivity of low-temperature grown InP.

J. Appl. Phys. 76, 600 (1994). Communication.


N.T. Son, E. Sörman, W.M. Chen, O. Kordina, B. Monemar and E. Janzén:

Possible lifetime limiting defect in 6H SiC.

Appl. Phys. Lett. 65, 2687 (1994).


X. Liu, A. Prasad, W.M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber and E.R. Weber:

Mechanism responsible for semi-insulating properties of annealed LT-GaAs.

Appl. Phys. Lett. 65, 3002 (1994).


N.T. Son, O. Kordina, A.O. Konstantinov, W.M. Chen, E. Sörman, B. Monemar and E. Janzén:

Electron effective masses and mobility in high purity 6H-SiC CVD-layers.

Appl. Phys. Lett. 65, 3209 (1994).


M. Godlewski, W. M. Chen, and B. Monemar:

Application of the ODCR experiment to the identification of radiative recombination processes.

J. Lumin. 60-61, 52 (1994).


W.M. Chen, P. Dreszer, R. Leon, E.R. Weber, E. Sörman, B.Monemar, B.W. Liang and C.W. Tu:

Electronic structure of P In antisite in InP.

Mat. Sci. Forum 143-147, 211 (1994).


P. Dreszer, W.M. Chen, W. Walukiewicz, D. Wasik, J.A. Wolk, and E.R. Weber:

Properties of resonant localized donor level in low-temperature InP.

Mat. Sci. Forum 143-147, 1081 (1994).


W.M. Chen, E. Janzén, B. Monemar, A. Henry, A.M. Frens, M.T. Bennebroek and J. Schmidt:

The configurational change of a metastable S-Cu defect in silicon.

Mat. Sci. Forum 143-147, 1179 (1994).


A.M. Frens, M.T. Bennebroek, J. Schmidt, W.M. Chen and B. Monemar:

Observation of rapid direct charge transfer between two deep defects in silicon.

Mat. Sci. Forum 143-147, 1371 (1994).


A. Henry, E. Sörman, S. Anderson, W.M. Chen, B. Monemar and E. Janzén:

A metastable selenium-related center in silicon.

Mat. Sci. Forum 143-147, 159 (1994).


M. Godlewski, W.M. Chen and B.Monemar:

Optically detected magnetic resonance for defect characterization.

Mat. Sci. Forum 143-147, 1353 (1994).


A. Henry, E. Sörman, S. Anderson, W.M. Chen, B. Monemar and E. Janzén:

Metastable chalcogen-related luminescent centers in silicon.

Phys. Rev. B49, 1662 (1994).


M. Godlewski, W.M. Chen and B. Monemar:

Application of the ODCR experiment to the identification of radiative recombination processes

Journal-of-Luminescence. 60-61, 52 (1994).


W.M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzén, A.M. Frens, M.T. Bennebroek and J. Schmidt:

Studies of a metastable S-Cu complex defect in Si by optical detection of magnetic resonance.

Phys. Rev. B50, 7365 (1994).


M. Godlewski, W.M. Chen and B. Monemar:

Application of the ODCR experiment to the identification of radiative recombination processes.

J. Luminescence 60&61, 52 (1994).


W.M. Chen, B. Monemar, A.M. Frens, M.T. Bennebroek and J. Schmidt:

Magnetic resonance techniques for excited state spectroscopy of defects in silicon.

Mat. Sci. Forum 143-147, 1345 (1994).


M. Godlewski, W.M. Chen and B. Monemar:

Optical detection of cyclotron resonance for characterization of semiconductors.

CRC Crit. Rev. Solid State and Materials Sciences 19, 241-301 (1994).


E. Janzén, O. Kordina, A. Henry, W.M. Chen, N.T. Son, B. Monemar, E. Sörman, P. Bergman, C.I. Harris, R. Yakimopva, M. Tuominen, A.O. Konstantinov, C. Hallin and C. Hemmingsson:

SiC - a semiconductor for high-power, high-temperature and high-frequency devices.

Physica Scripta 54, 283 (1994).


W.M. Chen, B. Monemar, A.M. Frens, M.T. Bennebroek and J. Schmidt:

Magnetic resonance techniques for excited state spectroscopy of defects in silicon.

Proc. 17th Int. Conf. Defects in Semiconductors, July 18-23, 1993, Gmunden, Austria. Invited talk.

Mat. Sci. Forum 143-147, 1345 (1994).


E. Janzén, O. Kordina, A. Henry, W.M. Chen, N.T. Son, B. Monemar, E. Sörman, P. Bergman, C.I. Harris, R. Yakimopva, M. Tuominen, A.O. Konstantinov, C. Hallin and C. Hemmingsson:

SiC - a semiconductor for high-power, high-temperature and high-frequency devices.

Proc. 16th Nordic Semiconductor Meeting, Laugarvatn, Iceland, June 12-15, 1994. Invited talk.

Physica Scripta 54, 283 (1994).


B. Monemar, E. Janzén, O. Kordina, A. Henry, W.M. Chen, N.T. Son, E. Sörman, P. Bergman, C.I. Harris, R. Yakimopva, M. Tuominen, A.O. Konstantinov, C. Hallin and C. Hemmingsson:

CVD epitaxial growth of SiC for power device applications.

Proc. of the 2nd International Conference on Materials Engineering for Resources (The Society of Materials Engineering for Resources of JAPAN; Akita, Japan; 20 - 22 Oct., 1994), p. 199 (1994). Invited keynote talk.


X. Liu, A. Prasad, W.M. Chen, A. Kurpiewski, Z. Liliental-Weber and E.R. Weber:

Defect-induced semi-insulating properties of low-temperature-grown GaAs.

Proc. of the 8th Conf. on Semi-Insulating III-V Materials, Warsaw, Poland, June 6-10, 1994.


X. Liu, A. Prasad, W.M. Chen, and E.R. Weber:

Magnetic circular dichroism of low-temperature-grown GaAs.

Proc. of the 22nd Int. Conf. on Phys. Semicond. ed. David J. Lockwood (World Scientific, Singapore, 1994) p.2427.


W.M. Chen, B. Monemar, E. Janzén, M. Singh, A. Henry, A.M. Frens, M.T. Bennebroek and J. Schmidt:

The EEH Auger threshold energy in silicon.

Proc. of the 22nd Int. Conf. on Phys. Semicond. ed. David J. Lockwood (World Scientific, Singapore, 1994) p.201.


M. Singh, N.T. Son, W.M. Chen and B. Monemar:

Direct evidence of efficient excitation transfer between deep defects in silicon.

Proc. of the 22nd Int. Conf. on Phys. Semicond. ed. David J. Lockwood (World Scientific, Singapore, 1994) p.2367.


N.T. Son, E. Sörman, W.M. Chen, A. Henry, O. Kordina, B. Monemar and E. Janzén:

Optically detected magnetic resonance study of dominant recombination processes in SiC.

Proc. of the 22nd Int. Conf. on Phys. Semicond. ed. David J. Lockwood (World Scientific, Singapore, 1994) p.393.


 

1995

W.M. Chen, B. Monemar, E. Janzén, A.M. Frens, M.T. Bennebroek and J. Schmidt:

Reply to Comment on "Direct determination of the electron-electron-hole Auger threshold energy in silicon."

Phys. Rev. Lett. 75, 3963 (1995).


N.T. Son, W.M. Chen, O. Kordina, A.O. Konstantinov, B. Monemar, E. Janzén, D.M. Hofmann, D. Volm, M. Drechsler and B.K. Meyer:

Electron effective masses in 4H-SiC.

Appl. Phys. Lett. 66, 1074 (1995).


M. Singh, W.M. Chen, N.T. Son and B. Monemar:

Efficient excitation transfer in silicon studied by Fourier transform photoluminescence excitation spectroscopy.

Appl. Phys. Lett. 66, 1498 (1995).


O. Kordina, A. Henry, J.P. Bergman, N.T. Son, W.M. Chen, C. Hallin and E. Janzén:

High quality 4H-SiC epitaxial layers grown by chemical vapour deposition.

Appl. Phys. Lett. 66, 1373 (1995).


X. Liu, A. Prasad, W.M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber and E.R. Weber:

Response to "Comment on 'Mechanism responsible for semi-insulating properties of annealed LT-GaAs'".

Appl. Phys. Lett. 67, 1333 (1995).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Properties of deep photoluminescence bands in SiGe/Si quantum structures grown by molecular beam epitaxy.

Appl. Phys. Lett. 67, 1642 (1995).


E. Sörman, W.M. Chen, A. Henry, S. Andersson, E. Janzén and B. Monemar:

Optically detected magnetic resonance study of a metastable selenium-related centre in silicon.

Phys. Rev. B51, 2132 (1995).

A.M. Frens, M.E. Braat, J. Schmidt, W.M. Chen and B. Monemar:

Transfer mechanism between pseudo-donor excited singlet and triplet states of the S-Cu complex defect in silicon.

Phys. Rev. B52, 8848 (1995).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers.

J. Crystal Growth 157, 362 (1995).


W.X. Ni, W.M. Chen, I.A. Buyanova, A. Henry, G.V. Hansson and B. Monemar:

Some critical issues on high quality growth of Si and SiGe films using a solid source molecular beam epitaxy system.

J. Crystal Growth 157, 242 (1995).


W.M. Chen, N.T. Son, E. Sörman, O. Kordina, J.P. Bergman, A. Henry, B. Monemar and E. Janzén:

Important role of shallow impurities in carrier recombination in SiC.

Solid State Commun. 93, 470 (1995).


M. Godlewski, T. Lundström, Q.X. Zhao, W.M. Chen, P.O. Holtz and B. Monemar:

Optically detected magnetic resonance studies of radiative processes in AlGaAs/GaAs high electron mobility structures.

Phys. Rev. B52, 14688 (1995).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Effects of ion bombardment on deep photoluminescence bands in p-type boron modulation-doped Si layers grown by molecular-beam-epitaxy.

Phys. Rev. B52, 12006 (1995).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Defect formation and recombination processes in p-type modulation-doped Si epilayers.

Mat. Sci. Forum 196-201, 479 (1995).


W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Important nonradiative grown-in defects in MBE-grown Si and SiGe/Si heterostructures.

Mat. Sci. Forum 196-201, 473 (1995).


M. Singh, W.M. Chen, N.T. Son, B. Monemar and E. Janzén:

Shallow excited states of deep luminescent centers in silicon.

Solid State Communications 93, 415 (1995).


M. Singh, W.M. Chen, N.T. Son, B. Monemar and E. Janzén:

Shallow excited states of deep luminescent centers in silicon.

Proc.of the 6th Int. Conf. on Shallow Level Centers in Semiconductors, Berkeley, USA, Aug. 10-12, 1994. Invited talk.

Solid State Communications 93, 415 (1995).


B. Monemar, I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni and G.V. Hansson:

Optical spectroscopy of SiGe heterostructures.

presented at the 2th International Workshop on Materials Science (IWOMS-95), Hanoi, Vietnam, Oct. 1995. Invited talk.


N.T. Son, E. Sörman, C. Hemmingsson, C. Hallin, M. Singh, W.M. Chen, J.P. Bergman, O. Kordina, B. Monemar, J.L. Lindström and E. Janzén:

Deep level defects in SiC.

Proceedings of the Second International Workshop on Materials Science October 19-21, 1995, Hanoi, Vietnam, Eds. C.A.J. Annelaan, F.F. Bekker, J.J. Franse et al. (World Scientific Singapore, 1995) p.174-179. Invited talk.


N.T. Son, E. Sörman, W.M. Chen, O. Kordina, B. Monemar and E. Janzén:

The lifetime limiting defect in SiC.

Proc. of the 21st Int. Symp. on Compound Semicond. ed. H. Goronkin and U. Mishra (IOP Publishing, Bristol, UK, 1995) p.405.


N.T. Son, O. Kordina, A.O. Konstantinov, W.M. Chen, E. Sörman, B. Monemar and E. Janzén:

Optically detected cyclotron resonance study of high-purity 6H-SiC CVD-layers.

Proc. of the 21st Int. Symp. on Compound Semicond. ed. H. Goronkin and U. Mishra (IOP Publishing, Bristol, UK, 1995) p.415.


W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Efficient nonradiative recombination centers in MBE-grown Si and SiGe/Si heterostructures.

Proc. the Materials Research Society 1995 Spring Meeting, San Francisco, USA, April 17-21, 1995.

Mat. Res. Soc. Symp. Proc. 378, 135 (1995).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Radiative recombination processes in boron delta-doped SiGe quantum wells.

Proc. the Materials Research Society 1995 Spring Meeting, San Francisco, USA, April 17-21, 1995.

Mat. Res. Soc. Symp. Proc. 378, 881 (1995).


I.A. Buyanova, A. Henry, W.M. Chen, W.X. Ni, G.V. Hansson and B. Monemar:

Deep photoluminescence bands in MBE grown Si and SiGe.

Proc. the Materials Research Society 1995 Spring Meeting, San Francisco, USA, April 17-21, 1995.

Mat. Res. Soc. Symp. Proc. 379, 405 (1995).


W.M. Chen, E. Sörman, B. Monemar, P. Dreszer, A. Prasad, X. Liu, E.R. Weber, B.W. Liang and C.W. Tu:

New electronic materials: low temperature grown GaAs and InP.

presented at the 19th Workshop on Compound Semiconductor devices and Integrated Circuits, May 21-24, 1995, Stockholm, Sweden. Abstract Collection.


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Characterization of p-type modulation-doped SiGe heterostructures by optical spectroscopies.

presented at the 19th Workshop on Compound Semiconductor devices and Integrated Circuits, May 21-24, 1995, Stockholm, Sweden. Abstract Collection.


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Luminescence spectroscopy of two-dimensional hole gas in p-type modulation-doped SiGe quantum wells and Si epilayers.

presented at 7th Int. Conf. on the Electronic Properties of Two-Dimensional Systems, Aug.7-11, 1995, Nottingham, U.K.

 

1996

W.M. Chen, I.A. Buyanova, A. Buyanov, T. Lundström, W.G. Bi and C.W. Tu:

Intrinsic doping: a new doping approach for n-type modulation doping in InP-based heterostructures.

Phys. Rev. Lett. 77, 2734 (1996).


W.M. Chen, I.A. Buyanova, W.X. Ni, G.V. Hansson and B. Monemar:

Identification of grown-in efficient nonradiative recombination centers in molecular beam epitaxial silicon.

Phys. Rev. Lett. 77, 4214 (1996).


W.X. Ni, G.V. Hansson, I.A. Buyanova, A. Henry, W.M. Chen and B. Monemar:

Influence of ion bombardment on the crystal quality of Si and SiGe films during molecular beam epitaxy growth.

Appl. Phys. Lett. 68, 238 (1996).


W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Non-radiative defects in Si and SiGe/Si heterostructures grown by molecular beam epitaxy.

Appl. Phys. Lett. 68, 1256 (1996).


A.V. Buyanov, P.O. Holtz, W.M. Chen, B. Monemar, T.G. Andersson and J. Thordson:

The ordered-disordered transition in Si δ-doped GaAs.

Appl. Phys. Lett. 68, 3464 (1996).


I.A. Buyanova, W.M. Chen, A. Buyanov, W.G. Bi and C.W. Tu:

Optical detection of quantum oscillations in InP/InGaAs heterostructures.

Appl. Phys. Lett. 69, 809 (1996).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Fermi-edge singularity in p-type modulation doped SiGe quantum wells.

Phys. Rev. B53, R1701 (1996). Rapid Communication


N.T. Son, E. Sörman, W.M. Chen, M. Singh, C. Hallin, O. Kordina, B. Monemar, E. Janzén and J.L. Lindström:

Dominant recombination center in electron irradiated 3C SiC epilayers.

J. Appl. Phys. 79, 3784 (1996). Communication.


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Optical properties of boron modulation-doped SiGe quantum wells and Si thin films.

Solid State Electronics 40, 53 (1996).


W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Important defect aspects in optoelectronic applications of SiGe/Si heterostructures.

Appl. Surface Science 102, 279 (1996).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Photoluminescence of the two-dimensional hole gas in p-type modulation-doped Si layers.

Phys. Rev. B53, 9587 (1996).


D. Volm, B.K. Meyer, D.M. Hofmann, W.M. Chen, N.T. Son, C. Persson, O. Kordina, E. Sörman, A.O. Konstantinov, B. Monemar, E. Janzén and U. Lindefelt:

Determination of the electron effective mass tensor in 4H SiC.

Phys. Rev. B53, 15409 (1996).


I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson and B. Monemar:

Influence of growth conditions on the formation of deep photoluminescence bands in MBE-grown Si layers and SiGe/Si quantum structures.

Appl. Surface Science 102, 293 (1996).


W.X. Ni, I.A. Buyanova, K.B. Joelsson, A. Henry, W.M. Chen, G.V. Hansson and B. Monemar:

Intense photoluminescence observed in modulation doped SiGe/Si quantum well structures.

Appl. Surface Science 102, 298 (1996).


N.T. Son, E. Sörman, W.M. Chen, J.P. Bergman, C. Hallin, O. Kordina, A.O. Konstantinov, B. Monemar, D.M. Hofmann, D. Volm, B.K. Meyer and E. Janzén:

Mechanism of optical detection of cyclotron resonance in SiC.

Proceedings of the International Conference of SiC and Related Materials-95, September 18-21, 1995, Kyoto, Japan, Int. Phys. Conf. Ser. No 142, 353 (1996).


N.T. Son, E. Sörman, M. Singh, W.M. Chen, C. Hallin, O. Kordina, B. Monemar, J.L. Lindström and E. Janzén:

Optical and magnetic resonance studies of as-grown and electron irradiated SiC epilayers.

Proceedings of the International Conference of SiC and Related Materials-95, September 18-21, 1995, Kyoto, Japan, Int. Phys. Conf. Ser. No 142, 321 (1996).


W.M. Chen, I.A. Buyanova, A. Buyanov, W.G. Bi and C.W. Tu:

Intrinsic n-type modulation doping in InP-based heterostructures.

Proc. the Materials Research Society 1996 Spring Meeting, San Francisco, USA, April 8-12, 1996.

Mat. Res. Soc. Symp. Proc. 421, 21 (1996).


C.W. Tu, W.M. Chen, W.G. Bi, I.A. Buyanova and A. Buyanov:

Low-temperature grown phosphides by gas-source MBE: GaP and InP/InGaAs structures.

presented at the Workshop on Non-stoichiometric GaAs and Related Materials, Santa Barbara, USA, March 6-7, 1996. Abstract.


W.M. Chen, I.A. Buyanova, W.X. Ni, G.V. Hansson and B. Monemar:

Effects of hydrogen treatments on non-radiative defects in MBE-grown Si and SiGe/Si heterostructures.

Proc. of the 23rd Int. Conf. on Physics of Semiconductors, Berlin, Germany, July 21-25, 1996, World Scientific, p.2637.


W.M. Chen, I.A. Buyanova, A. Buyanov, T. Lundström, B. Monemar, W.G. Bi and C.W. Tu:

A new approach for n-type modulation doping in InP-based heterostructures.

Proc. of the 23rd Int. Conf. on Physics of Semiconductors, Berlin, Germany, July 21-25, 1996, World Scientific, p.2279.


E. Sörman, N.T. Son, W.M. Chen, O. Kordina and E. Janzén:

Silicon vacancy related defects in electron-irradiated 6H SiC.

Proc. of the 23rd Int. Conf. on Physics of Semiconductors, Berlin, Germany, July 21-25, 1996, World Scientific, p.2649.


E. Sörman, N.T. Son, W.M. Chen, O. Kordina, B. Monemar and E. Janzén:

Efficient charge transfer from the nitrogen donor in 6H SiC.

Proc. of the 23rd Int. Conf. on Physics of Semiconductors, Berlin, Germany, July 21-25, 1996, World Scientific, p.2665.


D. Volm, B.K. Meyer, D.M. Hofmann, W.M. Chen, N.T. Son, C. Persson, O. Kordina, E. Sörman, A.O. Konstantinov, B. Monemar, E. Janzén and U. Lindefelt:

The electron effective mass tensor in 4H SiC.

Proc. of the 23rd International Conference on the Physics of Semiconductors (World Scientific, Singapore; 1996). p.111.

 

1997

W.M. Chen, I.A. Buyanova, W.X. Ni, G.V. Hansson and B. Monemar:

Post-growth treatments of non-radiative defects in low temperature MBE-grown Si.

Appl. Phys. Lett. 70, 369 (1997).


I.A. Buyanova, W.M. Chen, G. Pozina, B. Monemar, W.X. Ni and G.V. Hansson:

Mechanism for thermal quenching of luminescence in Si and SiGe/Si structures grown by molecular beam epitaxy: role of non-radiative defects.

Appl. Phys. Lett. 71, 3676 (1997).


W.X. Ni, K.B. Joelsson, C.-X. Du, I.A. Buyanova, G. Pozina, W.M. Chen, G.V. Hansson, B. Monemar, J. Cardenas and B.G. Svensson:

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 µm light emission.

Appl. Phys. Lett. 70, 3383 (1997).


I.A. Buyanova, Mt. Wagner, W.M. Chen, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Photoluminescence of GaN: Effect of Electron Irradiation.

Appl. Phys. Lett. 73, 2968 (1998).


W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Similarity between the 0.88-eV photoluminescence in GaN and the electron capture emission of the O P donor in GaP.

Phys. Rev. B58, R13351 (1998). Rapid Communications.


N.T. Son, E. Sörman, W.M. Chen, J.P. Bergman, C. Hallin, O. Kordina, A.O. Konstantinov, B. Monemar, D.M. Hofmann, D. Volm, B.K. Meyer and E. Janzén:

Effects of microwave fields on recombination processes in SiC.

J. Appl. Phys. 81, 1929 (1997).


N.T. Son, E. Sörman, W.M. Chen, C. Hallin, O. Kordina, B. Monemar, E. Janzén and J.L. Lindström:

Optically detected magnetic resonance studies of defects in electron irradiated 3C SiC layers.

Phys. Rev. B55, 2863 (1997).


I.A. Buyanova, T. Lundström, A.V. Buyanov, W.M. Chen, W.G. Bi and C.W. Tu:

Strong effects of carrier concentration on Fermi edge singularity in modulation doped InP/InGaAs heterostructures.

Phys. Rev. B55, 7052 (1997).


N.T. Son, E. Sörman, M. Singh, W.M. Chen, C. Hallin, O. Kordina, B. Monemar, E. Janzén and J.L. Lindström:

Deep luminescent centers in electron-irradiated SiC.

Diamond-and-Related-Materials.vol.6, no.10; Aug. 1997; p.1378-80.


N.T. Son, E. Sörman, W.M. Chen, C. Hallin, O. Kordina, B. Monemar and E. Janzén:

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers.

Diamond-and-Related-Materials.vol.6, no.10; Aug. 1997; p.1381-4.

I.A. Buyanova, W.M. Chen, G. Pozina, B. Monemar, W.X. Ni and G.V. Hansson:

Role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy.

Mat. Sci. Forum 258-263, 139 (1997).


E. Sörman, N.T. Son, W.M. Chen, J.L. Lindström and E. Janzén:

A deep photoluminescence band in 4H SiC related to the silicon vacancy.

Mat. Sci. Forum 258-263, 685 (1997).


W.M.Chen, N.T. Son, E.Janzén, D.M. Hofmann and B.K. Meyer:

Effective masses in SiC determined by cyclotron resonance experiments.

phys. stat. sol. (b) 202, 79 (1997), and a book chapter

in “Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device technology”, ed by W.J. Choyke, H. Matsunami and G. Pensl (Akademie Verlag GmnH, Berlin 1997) p.79.


W.M. Chen, I.A. Buyanova and B. Monemar,:

Defects in low temperature MBE-grown Si and SiGe/Si heterostructures.

Proc. of the 1996 Fall Meeting of the Materials Research Society, Boston, USA, Dec.2-6, 1996. Mat. Res. Soc. Symp. Proc. Vol. 442, 355 (1997). Invited talk.


W.M. Chen, I.A. Buyanova, W.G. Bi and C.W. Tu:

Intrinsic modulation doping in InP-based heterostructures.

Proc. of the 19th Int. Conf. on Defects in Semiconductors, July 21-25, 1997, Aveiro, Portugal. Mat. Sci. Forum 258-263, 805 (1997). Invited talk.


I.A. Buyanova, W.M. Chen, A. Buyanov, B. Monemar, W.G. Bi and C.W. Tu:

Optical perturbation spectroscopy of modulation-doped InP/InGaAs heterostructures.

Proc. of the 23rd Int. Symp. on Compound Semiconductors, St. Petersburg, Russia, Sept.23-27, 1996. Inst. Phys. Conf. Ser. 155, 755 (1997).


W.M. Chen, I.A. Buyanova, G. Pozina, B. Monemar, W.X. Ni and G.V. Hansson:

Non-radiative defects and their impact on luminescence in Si and SiGe/Si structures grown at low temperature by molecular beam epitaxy.

1997 March Meeting of the American Physical Society, 17-21 March 1997, Kansas City, USA. Bulletin of the American Physical Society 42, 356 (1997).

 

1998

W.M. Chen, O.O. Awadelkarim, B. Monemar, J.L. Lindström and G.S. Oehrlein:

Reply to Comment on “Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance.”

Phys. Rev. Lett. 80, 324 (1998).


I.A. Buyanova, Mt. Wagner, W.M. Chen, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Photoluminescence of GaN: Effect of Electron Irradiation.

Appl. Phys. Lett. 73, 2968 (1998).


W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Similarity between the 0.88-eV photoluminescence in GaN and the electron capture emission of the O P donor in GaP.

Phys. Rev. B58, R13351 (1998). Rapid Communications.


N.T. Son, A. Ellison, M.F. MacMillan, O. Kordina, W.M. Chen, B. Monemar and E. Janzén:

Chromium in 3C, 4H and 6H SiC: photoluminescence and optically detected magnetic resonance studies.

Materials Science Forum 264-268, 603 (1998).


N.T. Son, Mt. Wagner, E. Sörman, W.M. Chen, B. Monemar and E. Janzén:

Optically detected magnetic resonance studies of non-radiative recombination centers in 6H SiC.

Materials Science Forum 264-268, 599 (1998).


N.T. Son, A. Ellison, M.F. MacMillan, E. Sörman, T. Kimoto, W.M. Chen, B. Monemar and E. Janzén:

Influence of growth rate and temperature on the introduction of intrinsic defects and impurities in 4H and 6H SiC layers grown by high-temperature CVD.

Materials Science Forum 264-268, 603 (1998).


E. Sörman, W.M. Chen, N.T. Son, C. Hallin, J.L. Lindström, B. Monemar and E. Janzén:

The neutral silicon vacancy in 6H and 4H SiC.

Mater. Sci. Forum 264-268, 473 (1998).


W.-X. Ni, K.B. Joelsson, C.-X. Du, G. Pozina, I.A. Nuyanova, W.M. Chen, G.V. Hansson and B. Monemar,

Incorporation and luminescence properties of Er 2 O 3 and ErF 3 doped Si layers grown by molecular beam epitaxy.

Thin Solid Films 321, 223 (1998).


W.M. Chen, I.A. Buyanova, G. Pozina, B. Monemar, W.X. Ni and G.V. Hansson:

On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy.

J. Vacuum Science & Technology B16, 1928 (1998).


I. A. Buyanova, W. M. Chen, G. Pozina, W.-X. Ni, G. V. Hansson and B. Monemar:

Properties of Er-related emission in in-situ doped Si epilayers grown by molecular beam epitaxy.

J. Vacuum Science & Technology B16, 1732 (1998).


I.A. Buyanova, Mt. Wagner, W.M. Chen, J. L. Lindström, B. Monemar, H. Amano and I. Akasaki:

Optical properties of electron-irradiated GaN.

MRS Internet J. Nitride Semicond. 3, Art. 18 (1998).


I.A. Buyanova, Mt. Wagner, W.M. Chen, J. L. Lindström, B. Monemar, H. Amano and I. Akasaki:

Optical properties of electron-irradiated GaN.

MRS Internet J. Nitride Semicond. 3, Art. 18 (1998).


W.M. Chen, I.A. Buyanova, W.G. Bi and C.W. Tu:

Defect engineering in InP-based structures.

Presented at the MRS Spring Meeting; San Francisco, USA; 13-17 April, 1998. Invited talk.


W.-X. Ni , C.-X. Du, K.B Joelsson, G. Pozina, I.A. Buyanova, W.M. Chen, and G.V. Hansson:

MBE growth and characterization of Er/O and Er/F doped Si light emitting structures.

Proc. of the MRS Fall Meeting; Boston, USA; 2-6 Dec., 1997; Mater. Res. Soc. Symp. Proc. 486, 133 (1998).


E. Sörman, N.T. Son, Mt. Wagner, W.M. Chen, E. Janzén:

Vacancy-related Defects in SiC.

Proc. the APS March Meeting 1998. Bulletin of the American Physical Society 43, 287 (1998).


I. A. Buyanova, W. M. Chen, W. X. Ni, G. V. Hansson, and B. Monemar:

Role of growth conditions on the thermal quenching of photoluminescence from SiGe/Si quantum structures".

Proc. 1998 Spring Meeting of the Materials Research Society; San Francisco, USA; April 13-17, 1998. Mat. Res. Soc. Symp. Proc. 535, 295 (1998).


W. M. Chen, I. A. Buyanova, Mt. Wagner, B. Monemar, J. L. Lindström, H. Amano, and I. Akasaki,:

On the Dominant Mechanism for the Residual n-type Conductivity in GaN: Is Substitutional O N Donor Responsible?

Proc. of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED) (Ohmsha Ltd., Tokyo, Japan; Chiba, Japan; 29 Sept. - 2 Oct., 1998), p. 345 (1998).


I. A. Buyanova, Mt. Wagner, W. M. Chen, B. Monemar, J. L. Lindström, H. Amano, and I. Akasaki:

Effect of Electron Irradiation on Optical Properties of Gallium Nitride.

Proc. of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED) (Ohmsha Ltd., Tokyo, Japan; Chiba, Japan; Sept. 29 - Oct. 2, 1998), p. 206 (1998).

 

1999

I.A. Buyanova, W.M. Chen, W.G. Bi, Y.P. Zeng and C.W. Tu:

Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures.

Appl. Phys. Lett. 75, 1733 (1999).


I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu:

Mechanism for low temperature photoluminescence in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy.

Appl. Phys. Lett. 75, 501 (1999).


I.A. Buyanova, W. M. Chen, B. Monemar, H. P. Xin, and C. W. Tu:

Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures.

Appl. Phys. Lett. 75, 3781 (1999).


I. A. Buyanova, Mt. Wagner, W. M. Chen, N. V. Edwards, B. Monemar, J. L. Lindström, M. D. Bremser, R. F. Davis, H. Amano, and I. Akasaki;

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride.

Phys. Rev. B 60, 1746 (1999).


N. T. Son, A. Ellison, B. Magnusson, M. F. MacMillan, W. M. Chen, B. Monemar, and E. Janzén:

Photoluminescence and Zeeman studies of chromium-doped 4H and 6H SiC.

J. Appl. Phys. 86, 4348 (1999).


N. T. Son, P.N. Hai, Mt. Wagner, W. M. Chen, A. Ellison, C. Hallin, B. Monemar, and E. Janzén;

Optically detected magnetic resonance studies of intrinsic defects in 6H SiC.

Semicond. Sci. Technol. 14, 1141 (1999).


W. M. Chen, A. V. Buyanov, I. A. Buyanova, T. Lundström, W. G. Bi, Y.P. Zeng and C. W. Tu:

Transport properties of extrinsically and intrinsically doped InP/GaInAs heterostructures.

Phys. Scr. Vol. T 79, 103 (1999).


I.A. Buyanova, Mt. Wagner, W.M. Chen, J. L. Lindström, B. Monemar, H. Amano and I. Akasaki:

Effect of electron irradiation on optical properties of gallium nitride.

Phys. Scr. Vol. T 79, 72 (1999).


Mt. Wagner, I.A. Buyanova, W.M. Chen, B. Monemar, H. Amano and I. Akasaki:

ODMR investigations on electron irradiated GaN.

Phys. Scr. Vol. T 79, 53 (1999).


N. T. Son, W. M. Chen, J. L. Lindström, B. Monemar, and E. Janzén:

Complex defects related to the carbon vacancy in 4H and 6H SiC.

Phys. Scr. Vol. T 79, 46 (1999).


I. A. Buyanova, W. M. Chen, W. G. Bi, Y. P. Zeng and C. W. Tu

Intrinsic modulation doping in InP-based structure: properties relevant for device applications.

J. Crystal Growth 201/202, 786 (1999).


N. T. Son, W. M. Chen, J. L. Lindström, B. Monemar, and E. Janzén:

Carbon-vacancy related defects in 4H and 6H SiC.

Mater. Sci. Eng. B 61-62, 202 (1999).


W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Role of the Substitutional Oxygen Donor in the Residual n-type Conductivity in GaN.

MRS Internet J. Nitride Semicond. Res. 4S1, G5.4 (1999).


I. A. Buyanova, W. M. Chen, P. N. Hai, B. Monemar, H. Xin, and C. W. Tu:

Mechanism for light emissions in GaNAs/GaAs structures grown by molecular beam epitaxy.

phys. status solidi (b) 216, 125 (1999).


N.T. Son, P.N. Hai, P.T. Huy, T. Gregorkiewicz, C.A.J. Ammerlaan, J.L. Lindström, W.M. Chen, B. Monemar and E. Janzén:

Electron paramagnetic resonance studies of defects in electron-irradiated p-type 4H and 6H SiC.

PHYSICA B 274: 655-658 (1999).


Mt. Wagnar, E. Sörman, C. Hallin, J.L. Lindström, W.M. Chen and E. Janzén:

Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC.

PHYSICA B 274: 663-666 (1999).


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, J. P. Bergman, W. M. Chen and B. Monemar;

Mechanism of radiative recombination in acceptor doped bulk GaN crystals.

PHYSICA B 274: 39-42 (1999).


W.M. Chen:

Optically detected magnetic resonance.

presented at the Nordic EPR Group Workshop, Jyväskylä, Finland, Aug.29 – Sept.1, 1999. Plenary talk.


B. Monemar, J. P. Bergman, G. Pozina, I. A. Buyanova, W. M. Chen, Mt. Wagner, and T. Paskova;

Defects in Gallium Nitride.

Proc. of the International Workshop on Materials Science 99, ed. by F. F. Bekker et al. (Hanoi National University Publishing House; Hanoi, Vietnam; 2-4 Nov., 1999) vol. 1, p. 28 (1999). Invited talk.


Mt. Wagner, I.A. Buyanova, W.M. Chen, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki:

Internal transitions of a deep level defect in GaN studied by photoluminescence and optically detected magnetic resonance.

Proc. of the 24th International Conference on the Physics of Semiconductors, ed. by D. Gershoni (World Scientific, Singapore; Jerusalem, Israel; 2-7 Aug., 1998), Art. IX B 3 (1999).


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, J. P. Bergman, W. M. Chen, and B. Monemar:

Photoluminescence mechanisms in undoped and in Mg doped bulk GaN.

Proc. of the 24th International Conference on the Physics of Semiconductors, ed. by D. Gershoni (World Scientific, Singapore; Jerusalem, Israel; 2-7 Aug., 1998), Art. IX B17 (1999).


I. A. Buyanova, Mt. Wagner, W. M. Chen, B. Monemar, J. L. Lindström, H. Amano, and I. Akasaki:

Photoluminescence Spectroscopy of the 0.88 eV Emission in Electron-Irradiated GaN.

Presented at the APS March Meeting 1999.


Mt. Wagner, E. Sörman, C. Hallin, J. L. Lindström, W. M. Chen, and E. Janzén:

Properties of the neutral silicon vacancy in 6H SiC.

presented at the XXVIII International School on Physics of Semiconducting Compounds "Jaszowiec 99"; Jaszowiec, Poland; 6-11 June, 1999; Extended Abstract, p. 254 (1999).


W. Chen, P.N. Hai, Mt. Wagner, I.A. Buyanova, B. Monemar, H. Amano, I. Akasaki, H.P. Xin, and C.W. Tu:

Optical and Microwave Double Resonance of III-nitrides.

presented at the 1999 Joint International Meeting (the 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ)), Honolulu, Hawaii, October 17-22, 1999. Meeting Abstract Vol.99-2, Abs. No. 764.


I. Buyanova, W.M. Chen, B. Monemar, H.P. Xin, and C.W. Tu:

Effect of Growth Conditions on the Photoluminescence of GaNAs/GaAs Quantum Structures.

presented at the 1999 Joint International Meeting (the 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ)), Honolulu, Hawaii, October 17-22, 1999. Meeting Abstract Vol.99-2, Abs. No. 774.

 


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