Surface and Semiconductor Physics
The research within the division concerns two main fields. First, basic studies are made of the electronic and atomic structure of semiconductor surfaces, either clean or with well characterized overlayers. Second, there are studies, development and application of silicon-based molecular beam epitaxy, which is a crystal growth technique to produce advanced semiconductor devices.
We are extensive users of the synchrotron radiation facility MAX-lab in Lund and over the years we have built up experimental equipment at two different beam lines. One of us, Prof. Roger Uhrberg, is working actively with the angle-resolved photoelectron spectroscopy (ARPES) beam line, which is one of the first seven to be built at MAX IV. The beam line, which will be located at the 1.5 GeV ring, has received a funding of 70.2 MSEK.
As an example, two-dimensional Sn/Ag surface alloy on the Ge(111) and Si(111) surfaces are given in the following:
Responsible for this page: Hafiz Muhammad Sohail
Last updated: 09/20/13