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Publication List for Prof. Lars Hultman; June 2011

9000 citations to my papers (4889 excl. self-citations)

h -index 53

ISI most cited researcher in Materials Science

Invited Review Articles

1.      Thermal and Mechanical Stability of TiN-based Thin Films

         L. Hultman, C. Engström, J. Birch, M.P. Johansson, M. Odén, L. Karlsson, H. Ljungcrantz,

        Festschrift für Helmut Holleck (60 Jahren), Zeitschrift. für Metallkunde 90(10) (1999) 803.

 

2.      Thermal Stability of Nitride Thin Films, Lars Hultman, VACUUM 57 (2000) 1.

 

3.              Fullerene-like Carbon Nitride; A Resilient Coating Material

Lars Hultman, Jörg Neidhardt, Niklas Hellgren, Hans Sjöström, and Jan-Eric Sundgren,

Materials Research Society Bulletin, 28 (March) (2003) 194.

 

4.       Microstructural Evolution during Thin Film Growth, I. Petrov, P. Barna, L. Hultman, and J.E. Greene in:

       “AVS 50th Anniversary Commemorative Vol", ed. J.E.Greene et al (J.Vac.Sci Technol. A21 (2003) S117

 

5.        Microstructural Design of Hard Coatings,

          P.H. Mayrhofer, C. Mitterer, L. Hultman and H. Clemens,

INVITED REVIEW for Progress in Materials Science,   51 (2006) 1033-1114

7th most Cited article with 124 citations (published in the last 5 years) (January, 2011) Impact Factor: 16

 

6.              Beyond b -C3N4; Fullerene-Like Carbon Nitride, a Promising Coating Material,

             J. Neidhardt and L. Hultman

             J. Vac. Sci. Technol. A25 (2007) 633-644

 

7.              The Mn+1AXn phases: materials science and thin film processing

Per Eklund, Manfred Beckers, Ulf Jansson, Hans Högberg, and Lars Hultman,

Thin Solid Films 518 (8) (2010) pp. 1851-1878

Top-10 on Thin Solid Films Top25 Hottest Articles for first quarter 2010

http://top25.sciencedirect.com/subject/materials-science/15/journal/thin-solid-films/00406090/archive/26/

 

 

Publications in refereed high-level international scientific journals

8.       Initial Growth of TiN on Different Phases in High Speed Steels,

       L.Hultman, H.T.G. Nilsson, J.-E. Sundgren, B.O. Johansson and U. Helmersson,

       Thin Solid Films 124, 163 (1985).

 

9.      Growth Structure and Properties of TiN Coatings on Steel Substrates,

       U. Helmersson, H.T.G. Hentzell, L. Hultman, M.-K. Hibbs, and J.-E. Sundgren,

       in "Physics and Chemistry of Protective Coatings", ed. by W.D. Sproul, J.E. Greene and

       J.A.Thornton, (American Physical Society, New York, 1986) p.79.

 

10.    Low-Energy Ion Irradiation During Film Growth for Reducing Defect Densities in Epitaxial

       TiN(100) Films Deposited by Reactive Magnetron Sputtering,

       L. Hultman, U. Helmersson, S.A. Barnett, J.-E. Sundgren, and J.E. Greene,

       J. Appl. Phys. 61, 552 (1987).

 

11.     Formation of Aluminum Silicide Between Two Layers of Amorphous Silicon,

       H.T.G. Hentzell, A.Robertsson, L. Hultman, S. F. Gong, S.-E.Hörnström, and G.Radnoczi,

       Appl. Phys. Lett. 50, 933 (1987).

 

12.     Crystallization of Amorphous Silicon During Thin Film Gold Reaction,

       L. Hultman, I. Engström, P.A. Psaras, A. Robertsson, and H.T.G. Hentzell, J. Appl. Phys. 62, 3647 (1987).

 

13.     Al-Doped and Sb-doped Polycrystalline Si Obtained by Means of Metal-Induced Crystallization,

       S.F.Gong, H.T.G.Hentzell, A.E.Robertsson, L. Hultman, S.-E.Hörnström, and G.Radnoczi,

       J. Appl. Phys. 62, 3726 (1987).

 

14.     Metal Induced Crystallization of Amorphous Silicon,

       A. Robertsson, L. Hultman, H.T.G. Hentzell, S.-E. Hörnström, S.F.Gong, and P.A.Psaras,

       J. Vac. Sci. Technol. A5, 1447 (1987).

 

15.     The Role of Low-Energy Ion Bombardment During the Growth of Epitaxial TiN(100) Films by

       Reactive Magnetron Sputtering: Defect Formation and Annihilation,

       L. Hultman, U. Helmersson, S.A. Barnett, J.-E. Sundgren, J.E. Greene, J.Vac. Sci. Technol. A5, 2162 (1987).

 

16.     Epitaxial Growth of ZrN on Si(100),

       S.-A. Barnett, L. Hultman, J.-E. Sundgren, F. Ronin, and S. Rhode, Appl. Phys. Lett. 53, 400 (1988).

 

17.     Ar Incorporation in Epitaxial TiN Films Deposited by Reactive Magnetron Sputtering in Mixed Ar/N 2   Discharges,

       L. Hultman, L.C. Markert, B.-O. Johansson, J.-E. Sundgren, and J.E. Greene, Appl. Phys. Lett. 53, 1175 (1988).

 

18.     Growth of Epitaxial TiN Films Deposited by Reactive Magnetron Sputtering: The Role of Low-

       Energy Ion Irradiation During Deposition,

       L. Hultman , S.A. Barnett, J.-E. Sundgren, and J.E. Greene, J. Cryst. Growth 92, 639 (1988).

 

19.     Formation of Polyhedral N 2   Bubbles in Reactively-Sputtered Epitaxial TiN(100) Films,

       L. Hultman, J.-E. Sundgren, and J.E. Greene,   J. Appl. Phys. 66, 536 (1989).

 

20.     Microstructure Modification of TiN by Ion Bombardment During Reactive Sputter Deposition,

       I. Petrov, L. Hultman, U. Helmersson, J.-E. Sundgren, and J.E. Greene, Thin Solid Films 169, 299 (1989).

 

21.     Mg-Ti-Spinel Formation by Interfacial Solid-State Reaction at the TiN/MgO Interface,

       L. Hultman, J.-E. Sundgren, and D. Hesse,           J. Mater. Res. 4, 1266 (1989).

 

22.     Ar and Excess N Incorporation in Epitaxial TiN Films Grown by Reactive Bias Sputtering in

       Mixed Ar/N 2   and pure N 2 Discharges,

       L. Hultman, J.-E. Sundgren, L.C. Markert, and J.E. Greene, J. Vac. Sci. Technol. A7, 1187 (1989).

 

23.     Effect of Substrate Bias on Protective Properties of TiN Grown onto Cupper Substrates,

       S. Benhenda, J.M. Guglielmacci, M. Gillet, L. Hultman, and J.-E. Sundgren, Appl. Surf. Sci. 40, 121 (1989).

 

24.     Ion-Irradiation-Induced Suppression of Three-Dimensional Island Formation During InAs Growth on Si(100),

       C.-H. Choi, L. Hultman, and S.A. Barnett,           J. Vac. Sci. Technol. A8, 1587 (1990).

 

25.     The Water-Forming Reaction of Thin, SiO 2   Supported, Palladium Films,

       M. Eriksson,   L. Hultman, and L.-G. Pettersson, Vacuum 41, 137 (1990).

 

26.     Growth and Structural Characterization of Single-Crystal (001) Oriented Mo-V Superlattices,

       J. Birch, Y. Yamamoto, L. Hultman, G. Radnoczi, J.-E. Sundgren, and L.R. Wallenberg,

       Vacuum 41, 1231 (1990).

 

27.     Growth, Structural Characterization and Properties of Hard and Werar Protective Layered Materials,

       J.-E. Sundgren, J. Birch, G. Håkansson, L. Hultman, and U. Helmersson,     Thin Solid Films 193, 818 (1990).

 

28.     Enhanced Hardness in Lattice-Matched Single-Crystal TiN/V 0.6 Nb 0.4 N Superlattices,

       P.B. Mirkarimi, L. Hultman, and S.A. Barnett, Appl. Phys. Lett. 57, 2654 (1990).

 

29.     Effect of Nucleation Mechanisms on Planar Defects in InAs on Si(100),

       C.-H. Choi, L. Hultman, R.Ai, and S.A. Barnett,                 Appl. Phys. Lett. 57, 2931 (1990).

 

30.     Growth of Epitaxial TiN Thin Films on Si(100) by Reactive Magnetron Sputtering,

       L. Hultman, C.-H. Choi, W.-A. Chiou, and S.A. Barnett, J. Vac. Sci. Technol. B9, 221 (1991).

 

31.     Defect Structure and Phase Transitions in Epitaxial Metastable Cubic Ti 0.5 Al 0.5 N(001) Alloys

       Grown on MgO(001) by   Ultra-High Vacuum Magnetron Sputter Deposition,

       F.Adidi, I.Petrov, L.Hultman,U.Wahlström,T.Shimizu,D.McIntyre,J.E.Greene,J.E.Sundgren

       J. Appl. Phys. 69, 6437 (1991).

 

32.     Artificial superlattices without a sublattice,

       L.R.Wallenberg, L.Hultman, K.Jonsson, M.P. Johansson, J. Birch, Micron and Microscopy Acta 22, 189 (1991).

 

33.     Mg-Ti-Spinel Formation at the TiN/MgO Interface by Solid-State Reaction: Confirmation by HREM,

       L. Hultman, D. Hesse, and W.-A. Chiou,              J. Mat. Res. 6, 1744 (1991).

 

34.     Low-Energy (<100 eV) Ion Irradiation During Growth of TiN Deposited by Reactive Magnetron

       Sputtering: Effects of Ion Flux on Film Microstructure,

       L. Hultman, W.-D. Münz, J. Musil, S. Kadlec, I. Petrov, and J.E. Greene, J. Vac. Sci. Technol. A9, 434 (1991).

 

35.     Microstructures of TiN films grown by various Physical vapor deposition techniques,

       G. Håkansson, L. Hultman, J.-E. Sundgren, J.E. Greene, and W.-D. Münz, Surf. Coat. Technol. 48, 51 (1991).

 

36.     Transmission Electron Microscopy Studies of Microstructural Evolution, Defect Structure, and Phase Transitions

       in Polycrystalline and Epitaxial Ti 1-x Al x N and TiN Films Grown by Reactive Magnetron Sputter Deposition,

       L. Hultman, G.Håkansson, U.Wahlström, J.-E.Sundgren, I.Petrov, F.Adibi and J.E. Greene,

       Thin Solid Films,   205, 153 (1991).

 

37.     On Pico-Structural Models of PVD Films of Titanium Nitride,

       V.Valvoda, A.J.Perry, L.Hultman, J.Musil, and S.Kadlec, Surf Coat Technol. 49, 181   (1991).

 

38.     Composition and Structure of Epitaxial b- SiC Films Grown by Reactive Magnetron Sputtering on Si(100),

       Q.Wahab, L.Hultman, J.-E.Sundgren, and M.Willander,   J. Mat.Sci.Eng.B., B11, 61 (1992).

 

39.     Formation of Polyhedral Voids at Surface Cusps During Growth of Epitaxial TiN/NbN Superlattice and alloy films

         L. Hultman, L.R. Wallenberg, M.Shinn, and S.A.Barnett, J. Vac. Sci. Technol. A10, 1618   (1992).

 

40.     Growth, Structure, and Microhardness of Epitaxial TiN/NbN Superlattices,

       M. Shinn, L. Hultman, and S.A. Barnett, J. Mater. Res. 7, 901 (1992).

 

41.     Polycrystalline TiN Films Deposited by Reactive Bias Magnetron Sputtering:

       Effects of Ion Bombardment on Resputtering Rates, Film Composition, and Microstructure,

       I. Petrov, L. Hultman, J.-E. Sundgren, and J.E. Greene,     J. Vac. Sci. Technol. A10, 265 (1992).

 

42.     Synthesis of Metastable Epitaxial Zincblende-Structure AlN by Solid-State Reaction

       I.Petrov, E.Mojab, R.C.Powell, J.E.Greene, L. Hultman, J.-E. Sundgren, Appl. Phys. Lett.   60, 2491 (1992).

 

43.     Interfacial Reactions In Single-Crystal TiN(100)Al/Polycrystalline-TiN Multilayer Thin Films,

       L. Hultman, S.Benhenda, G.Radnoczi, J.-E.Sundgren, J.E.Greene, I.Petrov, Thin Solid Films, 215, 152 (1992).

 

44.     Ion Irradiation Effects During Growth of Mo/V(001) Superlattices by Dual-Target Magnetron Sputtering,

       G. Håkansson, J. Birch, L. Hultman, I.P. Ivanov, J.-E. Sundgren, and L.R. Wallenberg,

       J. Cryst. Growth 121, 399 (1992).

 

45.     Dual-Unbalanced Magnetron Deposition of TiN Films,

       S.L. Rohde, L. Hultman, M.S. Wong, W.D. Sproul, and J.R. Rohde, Surf. Coat. Technol. 50, 255 (1992).

 

46.   Formation of Defects During Ion-Assisted Growth of Thin Films from the Vapor Phase,

       J.-E. Sundgren, L. Hultman, G. Håkansson, J. Birch, and I. Petrov,

       in "Materials Modification by Energetic Atoms and Ions" Ed. K.S. Grabowski, vol. 268,

       (Materials Research Society Symposium Proceedings Series, Pittsburgh, PA, 1992), p.71.

 

47.     ∂-Function-shaped Sb-doping profiles in Si(001) obtained using a Low-energy accelerated-ion source during MBE

       W.-X. Ni, G.V. Hansson, J.-E. Sundgren, L. Hultman, L.R. Wallenberg, J.-Y. Yao,

          L.C. Markert, and J.E. Greene, Physical Review B46, 7551 (1992).

 

48. Growth of Ge/Si amorphous superlattices by dual-target dc magnetron sputtering,

       K.Järrendahl, J.Birch, L.Hultman, L.R.Wallenberg, G.Radnoczi, H.Arwin and J-E.Sundgren

       (Materials Research Society Symposium Proc. Series, Pittsburgh, PA, 1992),   vol 258 p.571.

 

49.     Residual Stresses and Fracture Properties of Magnetron Sputtered Ti Films on Si Microelements,

       H.Ljungcrantz, J.-Å.Schweitz, S.Johansson, L.Hultman, N.Kristensen, C.Shute, and J.-E.Sundgren,

       J. Vac. Sci. Technol., A11, 543 (1993).

 

50.     Interfacial Reactions in Epitaxial Al/Ti 1-x Al x N (0 ≤ x ≤ 0.2) Model Diffusion-Barrier Structures,

       I. Petrov, F. Adibi, E. Mojab, J.E. Greene, L. Hultman, and J.-E. Sundgren,

       J. Vac. Sci. Technol. A11, 11 (1993).

 

51.     Characterization of interfaces between amorphous hydrogenated carbon films and steel substrates

       using high-resolution cross-sectional transmission electron microscopy,

       H. Sjöström, L. Hultman, J.-E. Sundgren, and L.R.Wallenberg, Diamond and Related Materials, 2, 562 (1993).

 

52.     Average Energy Deposited per Atom: A Universal Parameter for Describing Ion-Assisted Film Growth?,

       I. Petrov, F. Adibi, J.E. Greene, L. Hultman, and J.-E. Sundgren, Appl. Phys. Lett. 63, 36 (1993).

 

53.     Microstructure of   amorphous C:H and metal-containing C:H films deposited on steel substrates,

       H. Sjöström, L. Hultman, J.-E. Sundgren, and L.R.Wallenberg, Thin Solid Films,   232, 169 (1993).

 

54.     Crystal Growth and Microstructure of Ti 1-x Al x N alloy films deposited by UHV         dual-magnetron sputtering,

       U. Wahlström, L. Hultman, J.-E. Sundgren, F. Adibi, I. Petrov, and J.E. Greene,

          Thin Solid Films, 235, 62   (1993).

 

55.     Elimination of Planar Faults in Lattice-matched Heteroepitaxial Films Using Ion-assisted Molecular Beam Epitaxy

       C.-H. Choi, L. Hultman, and S.A. Barnett, J. Vac. Sci. Technol. B11, 1 (1993).

 

56.     Effects of High-Flux, Low-Energy (20-100 eV) Ion Irradiation During Deposition on the Micro-structure and

       Preferred orientation of Ti 0.5 Al 0.5 N Alloys Grown by UHV Reactive Magnetron Sputtering,

       F. Adibi, I. Petrov, J.E. Greene, L. Hultman, and J.-E. Sundgren, J. Appl. Phys.   73, 8580 (1993).

 

57.     Gas porosity formation in epitaxial TiN films deposited by reactive magnetron sputtering in ArN 2  discharges

       P. R. Kazansky, L. Hultman, I. Ivanov, and J.-E. Sundgren, J. Vac. Sci. Technol., A11, 1426 (1993).

 

58.   Characterization of Misfit Dislocations in Epitaxial (001)-oriented TiN; NbN, VN, and (Ti,Nb)N

       Film Heterostructures by Transmission Electron Microscopy,

       L. Hultman, M. Shinn, P.B. Mirkarimi, and S.A. Barnett, J. Cryst. Growth 135, 309 (1994).

 

59.   Microstructural Investigation of Droplets in Arc-Evaporated TiN Films,

       H. Ljungcrantz, L. Hultman, J.-E. Sundgren, G. Håkansson, and L. Karlsson,

          Surf. Coat. Technol. 63, 123 (1994).

 

60.     Structure and mechanical properties of epitaxial TiN/V 0.3 Nb 0.7 N(001) superlattices,

       P.B.Mirkarimi, S.A. Barnett, K.M. Hubbard, T.R. Jervis, and L. Hultman, J. Mater. Res. 9, 1456 (1994).

 

61.     Influence of an External Axial Magnetic Field on the Plasma Characteristics and Deposition

       Conditions during dc Planar Magnetron Sputtering,

       I. Ivanov, P. Kazansky, L. Hultman, I. Petrov, and J.-E. Sundgren, J. Vac. Sci. Technol., A12, 314 (1994).

 

62.   Electron energy distribution functions in dc magnetron axially symmetric discharges: Evidence of spatial anisotropy

       I. Ivanov, P. Kazansky, L. Hultman, and J.-E. Sundgren, J. Phys. D27, 280, (1994).

 

63.     Characterization of Highly Sb-doped Si using High-resolution XRD and Transmission Elctron Microscopy,

       H. Radpisheh, M.R. Sardela Jr., L. Hultman and G.V. Hansson. J. Appl. Phys. 76, 763 (1994).

 

64.     Reactive magnetron sputter deposition of CN x   films on Si(001); growth, microstructure & mechanical properties

       H.Sjöström, I.Ivanov, M.Johansson, L.Hultman,J.-E.Sundgren,S.V.Hainsworth and T.F.Page

       Thin Solid Films 246, 103 (1994).

 

65.     Growth of High-Quality 3C-SiC Epitaxial Films on off-axis Si(001) at 850 °C by Reactive Magnetron Sputtering

       Q. Wahab, M.R. Sardela Jr., L. Hultman, A. Henry, M. Willander,E. Janzén, and J.-E. Sundgren,

          Appl. Phys. Lett. 65, 725 (1994).

 

66.   Growth, Characterization and Device Fabrication of Boron Delta-Doped Structures by Si-MBE

       M.R.Sardela Jr., H. Radpisheh, L. Hultman, and G.V. Hansson, Jpn. J. Appl. Phys , 33, 407 (1994).

 

67.     Growth and Characterization of 3C-SiC Films on Si Substrates by Reactive Magnetron

       Sputtering; Effects of CH 4   Partial Pressure on the Crystalline Quality, Structure and Stoichiometry,

       Q. Wahab, L. Hultman, I. P. Ivanov, M. Willander, and J.-E. Sundgren, Thin Solid Films 261, 317 (1995).

 

68.     Strain Determination and Microstructural Characterization of 50-keV Sn-Ion Implanted Si(001),

       M.R. Sardela, Jr., R. Rasit T,   M. Wilander, G.V. Hansson, and L.Hultman, J. Appl. Phys. 77, 1411 (1995).

 

69.     Preparation of Cubic Boron Nitride Films by use of Electrically Conducting Boron Carbide     Targets,

       H. Luthje, K. Bewilogua, S. Daaud, M. Johansson, and L. Hultman, Thin Solid Films 257, 40 (1995).

 

70.     Transmission Electron Microscopy of Metastable Materials,

       Lars Hultman, Key Engineering Materials Vol. 103 (Trans Tech. Publ., Switzerland, 1995) pp.181-192.

 

71.     Structural Characterization of Oxide Layers Thermally Grown on 3C-SiC Films,

       Q. Wahab, L. Hultman, M. Willander, and J.-E. Sundgren, J. Electr. Mater. 24, 1345 (1995).

 

72.     Growth of InGaAsSb Layers in the Miscibility Gap: Use of Very-Low Energy Ion Irradiation

       to Reduce Alloy Decomposition,

       R. Kaspi, L. Hultman, and S.A. Barnett, J. Vac. Sci. Technol. B13, 978   (1995).

 

73.     Tri-layer 3C-SiC/Si/3C-SiC Epitaxial Films Deposited on Si(111) Substrates by Reactive         Magnetron Sputtering,

       Q. Wahab, L. Hultman, I.P. Ivanov, M. Willander, and J.-E. Sundgren J. Mater. Res.10, 1349 (1995).

 

74.     Phase Formation and Microstructure of Nb 1-x Al x N Alloy Films Grown on MgO(001) by

       Reactive Sputtering; A New Ternary Phase,

       T.I.Selinder, D.J. Miller, K.E. Gray, M.R. Sardela, Jr, and L. Hultman. Vacuum, 46 1401 (1995).

 

75.     Ion Induced Stress Generation in Arc-Evaporated TiN films

       H. Ljungcrantz, L. Hultman, L. Karlsson, and J.-E. Sundgren,         J. Appl. Phys. 78, 832 (1995).

 

76.     High Flux Low Energy (~20 eV) N 2 +   Ion Irradiation During TiN Deposition by UHV

       Reactive Magnetron Sputtering: Effects on Microstructure and Preferred Orientation,

       L Hultman, J.-E. Sundgren, D. Bergstrom J.E. Greene, and I. Petrov,               J. Appl. Phys. 78, 5395 (1995).

 

77.   Effect of 20-95 eV Ar Ion Bombardment of GaAs(100); In Pursuit of Damage-Free Ion-Assisted Growth & Etching

       J. Mirecki Millunchick, L. Hultman, and S.A. Barnett, J. Vac. Sci. Technol. A13, 1155 (1995).

 

78.           Development of preferred orientation in polycrystalline TiN layers grown by UHV reactive magnetron sputtering,

             J.E. Greene,   J.-E. Sundgren, L. Hultman, I. Petrov, and D.B. Bergstrom, Appl. Phys. Lett. 67, 2928 (1995).

 

79.     Growth of Epitaxial AlN(0001) on Si(111) by Reactive Magnetron Sputter Deposition,

       I. Ivanov, L. Hultman, K. Järrendahl, P. Mårtensson, J.-E. Sundgren, B. Hjörvarsson, and J.E. Greene,

          J. Appl. Phys. 78, 5721 (1995)

 

80.     CoSi 2 /Si 1-x Ge x (001) Heterostructures Formed through Different Reaction Routes:

       Silicidation-induced Strain Relaxation, Defect Formation, and Interlayer Diffusion

       O.Nur, M.Willander, L. Hultman, H.Radamsson, G.V.Hansson, M.R.Sardela,Jr.,J.E. Greene,

       J. Appl. Phys. 78, 7063 (1995).

 

81.     Sputter-cleaning and Smoothening of GaAs(001) Surfaces Using Glancing-Angle Ion Bombardment,

       J.G.C. Labanda, L. Hultman, and S.A. Barnett,   Appl. Phys Lett. 66, 3114   (1995).

 

82.           Novel Applications of Low-Energy Ions in Molecular Beam Epitaxy of III-V Semiconductors,

             S.A. Barnett, J. Mirecki-Millunchick, J.G.C. Labanda, R. Kaspi, and L. Hultman,

             SPIE Proc. Int. Soc. for Optical Engineering vol. 2397, p.418 (1995), ed. M. Razeghi

 

83.           Effects of Glancing-Angle Ion Bombardment on GaAs(001),

             J.G.C. Labanda, S.A. Barnett, and L. Hultman,   J. Vac. Sci. Technol. B 13, 2260 (1995).

 

84.     Growth, Structural Characterization and Properties of Hard Nitride Based Coatings and Multilayers,

         J.-E Sundgren & L. Hultman,                 in Materials and Processes for Surface & Interface Engineering, ed Y. Pauleau

       (Kluwer Academic Publishers, The Netherlands, 1995), p. 453-474.

 

85.     Growth of 3C-SiC on On-Axis Si(001) Substrates by Chemical Vapour Deposition,

       O. Kordina, L.-O. , A. Henry, C. Hallin, R.C. Glass, L. Hultman, J.-E. Sundgren, and E. Janzén,

          J. Cryst. Growth 154, 303 (1995).

 

86.   Characterization of highly B-doped Si, Si 1-x G x , and Ge layers by high-resolution transmission electron microscopy

       H.H. Radamson, K.B. Joelsson, W.-X. Ni, Li. Hultman, and G.V. Hansson, J. Cryst. Growth 157, 80 (1995).

 

87.           Structural and Mechanical Properties of Carbon Nitride CN x   (0.2 ≤ x ≤0.35) Films,

             H.Sjöström, L. Hultman, J.-E.Sundgren, S.V.Hainsworth, T. F. Page,G.S.A.M. Theunissen,

             J. Vac. Sci Technol. A14, 56 (1996).

 

88.           Rayleigh   Scattering and direct observation of clusters in Ge 25 S 75   bulk glass by high resolution TEM

             Z. Cernsek, E. Cernoskova, L. Hultman, and X.-H. Li,                J. Mat. Sci. Lett. 15, 455 (1996).

 

89.     Strain Induced Growth Mode Transitions of V in Epitaxial Mo/V(001) Superlattices,

       J. Birch, L. Hultman, J.-E. Sundgren, and G. Radnoczi, Phys. Rev. B. 53, 8114 (1996).

 

90.           Ion-Assisted Low-temperature (≤150°C) epitaxial growth of TiN on Cu by reactive magnetron Sputter Deposition

             H.Ljungcrantz,S.Benhenda,I.P.Ivanov,G.Håkansson, L.Hultman, J.E.Greene,J.-E. Sundgren

             Thin Solid Films 287, 87 (1996).

 

91.     Microstructure of BN:C Films Deposited on Si Substrates by Reactive Sputtering from a B 4 C Target,

       M. Johansson, L. Hultman, S.Daaud, K.Bewilogua, H. Lüthje, A. Schütze, S. Kouptsidis, G.S.A.M. Theunissen

       Thin Solid Films, 287, 193 (1996).

 

92.     Fabrication and Characterization of MOS Capacitors on 3C-SiC Films Grown on Si(111)

       Substrates by Reactive Magnetron Sputtering,

       Q. Wahab, R. Turan, L. Hultman, M. Willander, and J.-E. Sundgren, Thin Solid Films, 287, 252 (1996).

 

93.   Heterojunction Diodes in 3C-SiC/Si System Grown by Reactive Magnetron

       Sputtering; Effects of Growth Temperature on Diode Rectification and Breakdown.

       Q Wahab, M. Karlsteen, O. Nur, L. Hultman, M. Willander, J.-E Sundgren, J. Electr. Materials, 25 1495 (1996)

 

94.           Growth and Electronic Properties of Epitaxial TiN Thin Films on 3C-SiC(001) and

             6H-SiC(0001) Substrates by Reactive Magnetron Sputtering,

             L. Hultman, H. Ljungcrantz, J.-E. Sundgren, C. Hallin, and E. Janzén , B. Pécz, and L.R. Wallenberg,

             J. Mater. Res. 11, 2458 (1996).

 

95.   Grazing incidence x-ray Diffraction Studies of Initial Growth of Pd on MgO(001),

       H. Fornander, J. Birch, L. Hultman, L.G. Petersson, and J.-E. Sundgren,        Appl. Phys Lett. 68, 2636 (1996).

 

96.           Strain Characterization of Ge 1-x Si x   & Heavily B-Doped Ge Layers on Ge(100) by 2D Reciprocal Lattice Mapping

             H.H. Radamson, K.B. Joelsson, W.-X. Ni, J. Birch, J.-E. Sundgren, L. Hultman, and G.V. Hansson,

                J. Cryst. Growth, 167, 495 (1996).

 

97.           Electrical Charact. & strain compensation Effect and thermal stability of B-doped Si 1-x Ge x /Si Heterostructures

             H.H. Radamson, O. Nur, W.-X. Ni, K.B. Joelsson, M. Willander, L. Hultman, and G.V. Hansson,

             Semiconductor Science and Technology 11, 1396 (1996).

 

98.     Nanoindentation Studies of Single-Crystal (001), (011), and (111) Oriented TiN Layers on MgO,

       H. Ljungcrantz, M. Odén, L. Hultman, J.E. Greene, and J.-E. Sundgren, J. Appl. Phys.80 (1996) 6725.

 

99.           Low-temperature deposition of Cubic BN:C Films by plasma-enhanced DC. Magnetron Sputtering of B 4 C Target

             M. Johansson, I.P. Ivanov, and L. Hultman, P. Münger, A. Schütze, J. Vac. Sci. Technol. A14 (1996), 3100.

 

100.    Deposition and Microstructure of TiN-NbN Multilayered Coatings by Combined Reactive

         Electron Beam Evaporation and DC Sputtering,

         M., P. Hollman, P. Hedenqvist, S. Hogmark, U. Wahlström, L. Hultman, Surf. Coat. Technol. 86 (1996) 351

 

101. Electrical characterization and the strain compensation effect and thermal stability of B-doped   heterostructures

             H.H. Radamson, O. Nur, W.-X. Ni, K.B.Joelsson, M. Willander, L. Hultman, and G.V.Hansson

             Semicond. Sci. Technol. 11 No 10 (October 1996) 1396-1401

 

102.   Phase formation Sequences in the Silicon-Phosphorous System: Determined by In-Situ   Synchrotron and

Conventional X-ray Diffraction Measurements, and Predicted by a Theoretical Model,   J.R.A.Carlsson,

L.Clevenger, L. D.Madsen, L. Hultman, X.-H. Li, J.Jordan-Sweet, C.Lavoie R.A.Roy, C. Cabral,Jr., G.

Morales, K.L. Ludwig, G.B. Stephenson, H.T.G. Hentzell,   Phil. Mag. B75, 363 (1997).

 

103.         A New Silicon Phosphide Si 12 P 5 : Formation Conditions, Structure and Properties

             J.R.A. Carlsson, L.D. Madsen, M Johansson, L.Hultman, X.-H. Li, H.T.G. Hentzell, and L.R. Wallenberg

             J. Vac. Sci. Technol. A15 (1997), 394.

 

104.    Growth of Epitaxial Fe/V(001) Superlattice Films,

         P. Isberg, B. Hjörvarsson, R. Wäppling, E.B. Svedberg, and L. Hultman,   Vacuum, 48, 483 (1997).

 

105.   Compositional Information from Amorphous Two-Element Samples using High-

         Resolution Electron Microscopy Imaging and Direct Digital Recording,

         P. Henning, L.R. Wallenberg, K. Järrendahl, L. Hultman, L. Falk, and J.-E. Sundgren,

            Ultramicroscopy 66, 221 (1997).

 

106.   Nanoindentation and Electron Microscopy Characterization of the Induced Plastic Zone of a Single Crystal

         TiN(001) Film, M. Odén, H. Ljungcrantz, and L. Hultman.    J. Mater. Res. 12 (1997) 2134.

 

107.   Strain Relaxation and Thermal Stability of the 3C-SiC/Si(001) Interface; a Molecular Dynamics Study,

         V. Chirita, L. Hultman, and L.R. Wallenberg,   Thin Solid Films 294   (1997) 47

 

108.   Interfacial void formation during vapor phase growth of 3C-SiC on Si(100) and (111) substrates

             L. Hultman, L.-O. Björketun, Q. Wahab, I.P. Ivanov, and J.-E. Sundgren,   J. Cryst. Growth 182   (1997) 379.

 

109.   Reactive Magnetron Sputtering of CNx Thin Films at Different Substrate Bias

         W.T. Zheng, E. Broitman, N. Hellgren, K.Z. Xing, I. Ivanov, H. Sjöström, L. Hultman, and J.-E. Sundgren,

            Thin Solid Films, 308-309, 223 (1997).

 

110.   Nanoindentation Hardness, Abrasive Wear, and Microstructure of TiN/NbN Polycrystalline

         Nanostructured Multilayer Films Grown by   Reactive Magnetron Sputtering,

         H. Ljungcrantz, C. Engström, L. Hultman, M. Olsson, X. Chu, M.S. Wong and W.D. Sproul.

               J. Vac Sci. Technol. A16, 3104 (1998).

 

111.    Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films,

         S Tungasmita , J. Birch, L. Hultman, E. Janzén, and J.-E. Sundgren

         Materials Science Forum Vols. 264-268, (Trans Tech Publ.,Switzerland,1998) pp.1225-1228

 

112.    Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates,

         M.F.MacMillan, U. Forsberg, P.O.Å. Persson, L. Hultman, and E. Janzén,

            Materials Science Forum Vols. 264-268, (Trans Tech Publ., Switzerland, 1998) pp.649-652

 

113.    Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC,

         P.O.Å Persson, Q. Wahab, L. Hultman,   N. Nordell, A. Schöner, K. Rottner, E. Olsson, and M.K. Linarsson,

         Materials Science Forum Vols. 264-268, (Trans Tech Publ., Switzwerland, 1998) pp.413-416

 

114.   Cathodoluminescence of Defect Regions in SiC Epi-Films

               M.F.MacMillan, L. Hultman, C. Hallin, I.G. Ivanov, A. Henry, E. Janzén, and S.A. Galloway

         Materials Science Forum Vols. 264-268, (Trans Tech Publ., Switzwerland, 1998) pp. 653-656

 

115.   Growth of High-Quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition,

         U. Forsberg, J. Birch, M.F.MacMillan,   P.O.Å. Persson, L. Hultman, and E. Janzén,

         Materials Science Forum Vols. 264-268, (Trans Tech Publ.,Switzwerland,1998) pp.1133-1136

 

116.    Initial Growth of Pd on MgO(001),

         H. Fornander, L. Hultman, L.G. Petersson, J. Birch, and J.-E. Sundgren, J. Cryst. Growth. 186, 189   (1998).

 

117.    Damage-free Cleaning of Si(001) using Glancing-Angle Ion Bombardment,

         J.G.C. Labanda, S.A. Barnett, and L. Hultman,   J. Vac. Sci Technol. B16, 1885 (1998).

 

118.    Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition,

                 L.-O. Björketun, L. Hultman, O. Kordina, and J.-E. Sundgren, J. Mater. Research, 13, 2632 (1998).

 

119.   Porosity Depth Profiling of Thin Porous Silicon Layers using Variable-Angle Spectroscopic

         Ellipsometry: A Porosity Graded Layer Model,

         L.A.A. Pettersson, L. Hultman, and H Arwin,   J. Appl. Optics 37, 4130 (1998).

 

120.     Growth of Strained Si/Si1-yCy /Si1-xGex Structures by MBE

         K.B. Joelsson, W.-X. Ni, G. Pozina, L. Hultman, and G.V. Hansson,   Vacuum, 49, 185 (1998)

 

121.   Enhanced Mechanical Hardness in Epitaxial Mo/NbN and W/NbN Superlattices,

         A. Madan, Yun-yu Wang, S.A. Barnett, C. Engström, H. Ljungcrantz, L. Hultman, and M. Grimsditch

         J. Appl. Phys. 84, 776 (1998).

 

122.   Internal Stress and Microstructure of SiC Reinforced Aluminium Alloy   2014,

         A. Weiland, L. Hultman, U. Wahlström, C. Persson, and T. Johannesson, Acta Materialia   46, 5271-5281 (1998)

 

123.   Boron Implantation and Epitaxial Regrowth Studies of 6H-SiC,

               N.Nordell, A.Schöner, K.Rottner, P.Persson,Q.Wahab, L. Hultman, E.Olsson, M.K.Linarsson

         J. Electronic Materials 27, 833 (1998).

 

124.   Time-Resolved Photoluminescence from nm-Sized Si Crystallites in SiO2,

         J. Linnros, A. Galeckas, A. Pareaud, N. Lalic, V. Grivickas, and L. Hultman,

         Mat. Res. Soc. Symp. Proc. Vol. 486 (Materials Research Society, 1988), pp. 249-254

 

125.   Growth of Poly- and Single-Crystal ScN on MgO(001): Role of Low-Energy N2+ Irradiation in

         Determining Texture, Microstructure Evolution and Mechnaical Properties,

         D. Gall, , I. Petrov, N. Hellgren, L. Hultman, J.-E. Sundgren, and J.E. Greene, J. Appl. Phys. 84, 6034   (1998)

 

126.    Nickel Distribution in Crystalline and Amorphous Silicon during Solid-Phase Epitaxy of Amorphous Silicon,

               A.Yu. Kuznetzov, B.G. Svensson, O. Nur, and L. Hultman,        J. Appl. Phys. 84, 6644 (1998)

 

127.     Optimization of growth conditions for strained Si/Si1-y/Cy structures

          K.B. Joelsson, Ni-Wei-Xin, G. Pozina, L. Hultman, G.V. Hansson,     Thin Solid Films. 321 , 15 (1998).

 

128.      Interdiffusion Studies of Single-Crystal (001)-Oriented TiN/NbN Superlattice Thin Films

          Carolina Engström, L. Hultman, J. Birch, J.R.A. Carlsson, C. Lavoie, and C. Cabral

          J. Vac Sci Technol A17, 2920 (1999).

 

129.     Role of Nitrogen in the Formation of Hard and Elastic CNx Thin Films by Reactive Magnetron Sputtering,

         N. Hellgren, M.P. Johansson, E. Broitman, L. Hultman, and J.-E, Sundgren,

             Phys. Rev. B59 (1999) 5162.

 

130.      Er doping of Si and Si/sub 0.88/Ge/sub 0.12/ using Er/sub 2/O/sub 3/ and ErF/sub 3/

          evaporation during molecular beam epitaxy:. A transmission electron microscopy study

          K.B. Joelsson, L. Hultman, W.-X. Ni, and G.V. Hansson,                  J. Cryst. Growth 196, 97   (1999).

 

131.    Carbon-Nitride Nanotubulite - Densely Packed and Well-Aligned Nanotubes,

         K. Suenaga, M.P.Johansson, N. Hellgren, E. Broitman, L.R: Wallenberg, C.Colliex, J.-E.Sundgren, L. Hultman

         Chem. Phys. Lett. 300, 695 (1999).

 

132.    High-Resolution Electron Microscopy and Nanoindentation Studies of BN:C Films Deposited by

         Reactive D.C. Magnetron Sputtering from a B4C Target,

         M. Johansson, H. Sjöström, and L. Hultman,    Vacuum 53, 451 (1999).

 

133.    Temporal Development of the Plasma Composition of a Pulsed Aluminium Plasma Stream

         in the Presence of Oxygen,

         J.M. Schneider, A. Anders, I.G. Brown, B. Hjörvarsson, and L. Hultman,   Appl. Phys. Lett. 75 (1999) 612

 

134.    Self-interstitial Structures in bcc-W studied by Molecular Dynamics Simulation

         M.H.Carlberg, E.P. Münger, and L. Hultman, J. Phys. C, 11 (1999) 6509.

 

135.    Deposition and Mechanical Properties of Polycrystalline Y2O3/ZrO2 Superlattices,

         P. Yashar, S.A:. Barnett, L. Hultman, and W.D. Sproul, J. Mater. Res. Vol. 14, No. 9, Sep. 1999, p. 3614.

 

136.    On the effect of hydrogen incorporation in strontium titanate layers grown by reactive high

         vacuum magnetron sputtering

         J.M. Schneider, B. Hjörvarsson, X. Wang,   L. Hultman,   Appl. Phys. Lett. 75 (1999) 3476.

 

137.    HREM and EELS Analysis of Fullerene-like Carbon Films,

         I. Alexandrou, H.-J. Scheibe, C.J. Kiely, A.J. Papworth, G.A.J. Amaratunga, and L. Hultman,

         Inst. Phys. Conf. Ser. 161 (1999) 369-372.

 

138.           HREM investigation of structural Defects in Al- and B- implanted 4H and 6H SiC

P.O.Å.Persson, E.Olsson and L.Hultman,   Inst. Phys. Conf. Ser. No 164 (1999) 525-528

 

139.     Improved Gas Response Characteristics of Field-Effect Devices by High-Temperature Growth of the Gate Metal,

         L. Åbom, P. Sandström, L. Hultman, and M. Eriksson,     Eurosensors XIII Proc., The Hague, NL, Sept. 1999.

 

140.    Design, Plasma Studies, and Ion-Assisted Thin Film Growth in Unbalanced Dual Target

         Sputtering System with a Solenoid Coil,

         C. Engström, T. Berlind, J. Birch, L. Hultman, I.P.Ivanov, S.R.Kirkpatrick, and S. Rohde,

         Vacuum 56 (2000) 107

 

141.    In-situ Scanning Tunneling Microscopic and Spectroscopic Investigation of

         Magnetron Sputtered Carbon and Carbon Nitride Thin Films,

         N. Lin, N. Hellgren, M.P. Johansson, L. Hultman, R. Erlandsson, and J.-E. Sundgren,

            Phys. Rev. B 61 (2000) 4898-4903

 

142.    Growth of CNx/BN:C Multilayer Films by Magnetron Sputtering,

         M.P. Johansson, N. Hellgren, T. Berlind, E. Broitman, L. Hultman, and J.-E. Sundgren,

         Thin Solid Films 360 (2000) 17.

 

143.     Microstructure Evolution during Tempering of Arc-Evaporated Cr-N Coatings,

         J. Almer, M. Odén, L. Hultman, and G. Håkansson,   J. Vac. Sci. Technol. A18 (2000) 121.

 

144.    Enhanced Quality of Epitaxial AlN Thin Films on 6H-SiC by UHV Ion-Assisted Reactive dc Magnetron

         Sputtering

         S. Tungasmita, J. Birch, P.O.Å. Persson, K. Järrendahl, and L. Hultman,   Appl. Phys. Lett. 76 (2000) 170.

 

145.    Interface Structure of Hydride Vapor Phase Epitaxial GaN Grown with High-T. Reactively Sputtered AlN Buffer

          E. Valcheva, T. Paskova, S. Tungasmita, P.O.Å. Persson, J. Birch, E.B.Svedberg, L. Hultman and B. Monemar

         Appl. Pys. Lett 76 (2000) 1860

 

146.    Growth, Microstructure, and Mechanical Properties of Arc Evaporated TiC x N 1-x (0≤x≤1) Films,

         L. Karlsson, L. Hultman, M. Johansson, J.-E. Sundgren, H. Ljungcrantz, Surf. Coat. Technol.   126 (2000) 1.

 

147.   Influence of residual stresses on mechanical properties of TiC x N 1-x (0≤x≤0.45) films deposited by arc evaporation

         L. Karlsson, L. Hultman, and J.-E. Sundgren,   Thin Solid Films 371 (2000) 167.

 

148.   High-Temperature Stability of Epitaxial Non-Isostructural Mo /NbN Superlattices,

         C. Engström, A. Madan, J. Birch, M Nastasi,   L. Hultman, and S.A. Barnett,   J. Mater. Res.   15 (2000) 554.

 

149.   Template-Synthesized B-N-C Nanoboxes,

         M.P. Johansson, K. Suenaga, N. Hellgren, C. Colliex, J.-E. Sundgren, and L. Hultman,

         Appl. Phys. Lett. 76 (2000) 825.

 

150.    Magnetic-Field-Dependent Plasma Composition of a Pulsed Arc in a High-Vacuum Ambient,

J.M.Schneider, A. Anders, B. Hjörvarsson, and L. Hultman, Appl. Phys. Lett. 76 (2000) 1531

 

151.         Dynamics of self-interstitial structures in body-centred-cubic W studied by molecular dynamics,

         M.H. Carlberg, E.P. Münger, and L. Hultman,   Journal of Physics: Condensed Matter 12 (2000) 79.

 

152.    Microstructural and infrared Optical Properties of Electrochemically Etched Highly-Doped 4H-SiC,

       S. Zangooie, P.O.A. Persson, J.N. Hilfiker, L. Hultman, amd H. Arwin, J. Appl. Phys. 87 (2000)   8497.

 

153.     Residual Stress Formation in Multilayered TiN/TaN x Coatings during Reactive Magnetron Sputter Deposition

M. Nordin, M.Larsson, T. Joelsson, J. Birch, and L. Hultman, J. Vac. Sci. Technol. A18 (2000) 2884.

 

154.     Growth, Structure, and Mechanical Properties of CNxHy Films Deposited by d.c. Magnetron Sputtering in

          N2/Ar/H2 Discharges,

             N. Hellgren, M.P. Johansson, B. Hjörvarsson, E. Broitman, M. Östblom, B. Liedberg, L. Hultman,

             and J.-E. Sundgren,    J. Vac. Sci. Technol. A18 (2000) 2349.

 

155.      Luminescence and Microstructure of Er/O and CO-doped Si Structures Grown by MBE using Er and SiO

          Evaporation,

          F. Duteil, C.-X. Du, K.B. Joelsson, P.O.Å.Persson, L. Hultman, G. Pozina, W.-X. Ni, and G.V. Hansson,

          Materials Science in Semiconductor Processing, 3 (2000) 523.

 

156.     Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC,

          S Tungasmita , P.O.Å. Persson, K. Järrendahl,   L. Hultman, and J. Birch,

          Materials Science Forum Vols., 338-342 (2000) 1519

 

157.    Mechanical and Thermal Stability of TiN/NbN Superlattice Thin Films,

               L. Hultman, C. Engström, and M. Odén, Surf. Coat. Technol., 133-134 (2000) 227

 

158.     Carbon Nitride Films on Orthopedic Substrates,

          E. Broitman, W. Macdonald, N. Hellgren, G. Radnozci, Zs. Czigány, A. Wennerberg, M. Jacobsson,

          and L. Hultman,   Diamond and Related Materials 9 (2000) 1984.

 

159.      Influence of Plasma Parameters on the Growth and Properties of Magnetron Sputtered CNx Thin Films,

          N. Hellgren, K. Macák, E. Broitman, M.P. Johansson, L. Hultman, and J.-E. Sundgren,

          J. Appl. Phys. 88 (2000) 524.

 

160.     Damage Evolution in Al-Implanted 4H-SiC,

         A. Hallén, P.O.Å. Persson, A.Yu. Kuznetsov, L. Hultman, and B.G. Svensson,

         Materials Science Forum, 338 (2000) 869.

 

161.     Strain Relaxation of Low-Temperature Deposited Epitaxial TiC Thin Films

          H. Högberg, J. Birch, M.P. Johansson, L. Hultman, and U. Jansson, J. Cryst. Growth 219 (2000) 237.

 

162.   Generation and thermal stability of intrinsic compressive film stress in hard PVD ceramic films

      Hultman, L.   (Thin Film Phys. Div., Linkoping Univ. , Sweden ) ;   Horling, A.   Proc. 7th International

Symposium on Trends and Applications of Thin Films. TATF 2000 (2000) , p 105-7

 

163.           Growth Evolution of Dislocation Loops in ion-Implanted 4H-SiC,

P.O.Å. Persson and L. Hultman,

Materials Science Forum 353-3 (2000) 315.

 

164.     Luminescence and microstructure of Er/O co-doped Si structuresgrown by MBE using Er and SiO Evaporation,

F. Duteil, C.X. Du, K.B. Joelsson, and L. Arsson

Materials Science in Semiconductor Processing 3 (2000) 523

 

165.      Mechanical and Tribological Properties of CN x Films Deposited by Reactive Magnetron Sputtering,

          E. Broitman, N. Hellgren, O. Wännstrand, M. P. Johansson, T. Berlind, H. Sjöström, J.-E. Sundgren,

             M. Larsson, and L. Hultman , Wear 248 (2001) 55-64.

 

166.     Effect of Chemical Sputtering on the Growth and Structural Evolution of Magnetron Sputtered CN x (0≤x≤0.35)

          Thin Films,

             N. Hellgren, M.P. Johansson, E. Broitman, P. Sandström, L. Hultman, and J.-E. Sundgren,

             Thin Solid Films, 382 (2001) 146.

 

167.      Electrical and Optical Properties of CN x (0≤x≤0.25) Films Deposited by Reactive Magnetron Sputtering,

           E. Broitman, N. Hellgren, K. Järrendahl, M.P. Johansson, S.Olafsson, G.Radnoczi, J.-E.Sundgren, L.Hultman

           J. Appl. Phys. 89 (2001) 1184.

 

168.     Synchrotron X-ray Diffraction and Transmission Electron Microscopy Studies of Interfacial Reaction Paths and

          Kinetics during Annealing of Fully-002-Textured Al/TiN Bilayers,

          J.-S. Chun, J.R.A. Carlsson, P. Desjardins, D.B. Bergstrom, I. Petrov, J.E. Greene, C. Lavoie, C. Cabral, Jr.,

          and L. Hultman   J. Vac. Sci. Technol. A19 (2001) 182

 

169.     Anisotropies in Carbon Nitride Films Grown by Magnetron Sputtering,

          N. Hellgren, M.P. Johansson, J.-E. Sundgren, L. Hultman,

            Appl. Phys. Lett. 78 (2001) 2703.

 

170.    Monitoring the Structural and Chemical Properties of CNx Thin Films during in-situ Annealing in a TEM,

S.E. Grillo, N. Hellgren, V. Serin, E. Broitman, C. Colliex, L. Hultman, and Y. Kihn,

European Physics Journal, Appl. Phys. 13 (2001) 97.

 

171.    Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC

               P.O.Å. Persson, L. Hultman,    Mater.Sci.Forum 353-356 (2001) pp.315-318

 

172.     Predicted Stability of a New Aza[60]Fullerene Molecule   C 48 N 12 ,

S. Stafström, L. Hultman, and N. Hellgren, Chem. Phys. Lett. 340 (2001) 227.

 

173.     Deposition of Epitaxial Transition Metal Carbide Films and Superlattices by Simultaneous dc Metal Magnetron

          Sputtering and C 60   Evaporation,

          H. Högberg, J. Birch, M. P. Johansson, U. Jansson, and L. Hultman   J. Mater Res. 16 (2001) 633

 

174.    Growth, Structure and Mechanical Properties of Transition Metal Carbide Superlattices by Simultaneous dc

       Magnetron Metal Sputtering and C 60   Evaporation,

         H. Högberg, J. Birch, M. Odén, J.-O. Malm, L. Hultman, and U. Jansson,     J. Mater. Res. 16 (2001) 1301.

 

175.      Microstructure, Mechanical Properties, and Wetting Behavior of Si-C-N Thin Films Grown by Reactive

          Magnetron Sputtering

          T. Berlind, M.P. Johansson, N. Hellgren , and L. Hultman,   Surf. Coat. Technol. 141 (2001) 145.

 

176.     Doping of Silicon Carbide by Ion Implantation,

        B.G. Svensson , A. Hallén, M.K. Linnarsson, A. Yu. Kuznetsov, M.S. Janson, D. Åberg, J. Österman,  

   P.O.Å.Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, J.P. Bargman, C. Jagadish, and E. Morvan,

        Mater. Sci. Forum 353-356 (2001) 549-554.

 

177.     Precipitate Formation in Heavily Al-Dped 4H-SiC Layers,

        M.K. Linnarsson, P.O.Å.Persson, H. Bleichner, M.S. Janson, U. Zimmermann, H. Andersson, S. Karlsson,

   R. Yakimova, L. Hultman, and B.G. Svensson,

        Mater. Sci. Forum 353-356 (2001) 583-586.

 

178.    Solubility Limit and Precipitate Formation in Al-Doped 4H SiC Epitaxial Material,

   M.K. Linnarson, M.S.Jansson, U.Zimmerman, J. Wong-Leung, B.G. Svensson, P.O.Å.Persson, S.Karlsson,

   H.Bleichner, E. Olsson , and L. Hultman,

Appl. Phys. Lett. 79 (2001) 2016.

 

179.    Growth of Fullerene-Like Carbon Nitride Thin Solid Films Consisting of Cross-Linked Nano-Onions,

Zs. Czigány, J. Neidhardt, I. Brunell, and L. Hultman, Appl. Phys. Lett. 79 (2001) 2639

 

180.         Epitaxial NaCl-Structure d-TaNx(001): Electronic Transport Prop, Elastic Modulus and Hardness vs N/Ta Ratio,

  C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, and J. E. Greene, M. Odén, L. Hultman,

J. Appl. Phys. 90 (2001) 2879.

 

181.    Thermal Stability of Carbon Nitride Thin Films,

      N. Hellgren, N. Lin, E. Broitman,   V. Serin, S. E. Grillo,R. Twesten, I. Petrov, C. Colliex, L. Hultman,

and J.-E. Sundgren

J. Mater. Res., 16 (2001) 3188.

 

182.    Cross-linked Carbon Nitride Nano-Onions in Solid Phase; Existence of C48N12 Aza-Fullerenes

L. Hultman, S. Stafström, Zs. Czigány, N. Hellgren, I. Brunell, J. Neidhardt, K. Suenaga, C. Colliex,

Phys. Rev. Lett, 87 (Nov 26, 2001) p. 225503-1.

 

183.    Low-Temperature Epitaxial Growth of Metal Carbides using Fullerenes,

U. Jansson, H. Högberg, J.-P. Palmqvist, L. Norin, J.O. Malm, L. Hultman, and J. Birch,

Surf. Coat. Technol. 142-144 (2001) 817.

 

184.    Electrochemical Deposition of Co Nanowire Arrays; A Quantitative Consideration of Concentration Profiles,

S. Valizadeh, J.M. George, P. Leisner, and L. Hultman, Electrochimica Acta, 47 (2001) 865.

 

185.    Structural Features of Thick c-BN Coatings Deposited via a Graded B-C-N- Interlayer,

K. Yamamoto, M. Keunecke, K. Bewilogua, S. Czigany , and L. Hultman,

Surf. Coat Technol., 142-144 (2001) 881.; Addendum   [Surf. Coat Technol. 153 (2002) 315]

 

186.    Mechanical and Tribological Properties of CNx Films Deposited by Reactive Pulsed Laser Ablation,

A. Zocco, A. Perrone, E. Broitman, Zs. Czigány, L. Hultman, M. Anderle, and N. Laidani,

Diamond and Related Materials, 11 (2002) 98 .

 

187.    Electrochemical Synthesis of Ag/Co Multilayer Nanowires in Porous Polycarbonate Membranes,

S. Valizadeh, J.M. George, P. Leisner, and L. Hultman, Thin Solid Films 402 (2002) 262.

 

188.   Deformation Structures under Indentations in TiN/NbN Single- Crystal Multilayers Depostited by

Magnetron Sputtering at Different Substrate Bias,

J.M. Molina-Aldareguia, S.J. Lloyd, W.J. Clegg, M. Odén, and L. Hultman,

Phil. Mag. A 82 (2002) 1983.

 

189.    Pulsed Low-Energy Ion-Assisted Growth of Epitaxial Aluminum Nitride Thin Films on 6H-SiC Wafers

by Reactive DC         Magnetron Sputtering,

S. Tungasmita, P.O.Å. Persson, L. Hultman, and J. Birch,

J. Appl. Phys. 91 (2002) 3551.

 

190.   Gas Sensitivity of Field-Effect Devices with Combinations of TiN and Pt as the Metal Layer,

         A.E. Åbom, L. Hultman, M. Eriksson, and R. Twesten

         J. Vac. Sci. Technol. A20 (2002) 667.

 

191.           Influence of Gate Metal Film Growth Parameters on the Properties of Gas-Sensitive Field-Effect Devices,

        A. E. Åbom, P. Persson, L. Hultman, and M. Eriksson,

  Thin Solid Films 409 (2002) 233.

 

192.         Thin Oxide Films as Surface Modifiers of MIS Field Effect Gas Sensors,

A.E. Åbom, E.Comini,, G. Sberveglieri, L. Hultman, and M. Eriksson,

             Sensors and Actuators B85 (2002) 109.

 

193.    Misfit Defect Formation in Thick GaN Layers Grown on Sapphire by Hydride Vapour Phase Epitaxy,

          E. Valcheva, T. Paskova, P.O.Å. Persson, L. Hultman, and B. Monemar,   Appl. Phys. Lett. 80 (2002) 1550.

 

194.           Synthesis and Mechanical Properties of Boron Suboxide Thin Films,

  D Music, J. M. Schneider, V Kugler, S. Nakao , P. Jin, M. Östblom, L. Hultman, and U. Helmersson,

  J. Vac. Sci. Technol. A20 (2002) 335

 

195.   Electrical Properties of Carbon Nitride Thin Films:   Role of Morphology and Hydrogen Content,

E. Broitman, N. Hellgren, J. Neidhardt, I. Brunell, and L. Hultman.

J. Electronic Materials 31(9)   (2002) L11.

 

196.   Influence of High-Power Densities on the Composition of Pulsed Magnetron Plasmas,

A.P. Ehiasarian, R. New, W.-D. Münz, U. Helmersson, L. Hultman, and V. Kouznetsov,

               Vacuum 65 (2002) 147

 

197.   How hard is fullerene-like CNx?

                I. Arce Garcia, E.R. Berasategui, S.J. Bull and T.F. Page, N. Hellgren, J. Neidhardt and L.Hultman,

             Phil Mag. A 82 (2002) 2133.

 

198.   Growth of Epitaxial (SiC) x (AlN) 1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition,

               S. Tungasmita, P.O.Å. Persson, T. Seppänen, L. Hultman, and J. Birch,

               Materials Science Forum Vols. 389-393, (Trans Tech Publ. , Switzerland , 2002) pp. 1481-1484

 

199.         Structural Defects in Electrically Degraded 4H-SiC PiN Diodes,

               P.O.Å.Persson, H.Jacobson, J.M.Molina-Aldareguia, J.P. Bergman, T.Tuomi, W.J. Clegg, E. Janzén, L. Hultman,

               Materials Science Forum Vols. 389-393, (Trans Tech Publ. , Switzerland , 2002) pp. 423-426

 

200.          On the Nature of Ion Implantation Induced Dislocation Loops in 4H Silicon carbide,

P.O.Å. Persson, L. Hultman, R. Yakimova, M.S. Jansson, A. Hallén, W. Skurupa, and D. Panknin,

J. Applied Physics, 92. (2002) 2501.

 

201.   Structural Defects in Degraded p-i-n SiC Diodes,

P.O.Å. Persson, H. Jakobsson, E. Janzén, J. Molina-Alderaguia, W. Clegg. P. Bergman, and L. Hultman

  Applied Physics Letters 80 (2002) 4852.

 

202.   Deposition of Epitaxial Single-Phase Ti3SiC2 Thin Films,

J.-P. Palmquist, U. Jansson, T. Seppänen, P.O.Å. Persson, J. Birch, L. Hultman, and P. Isberg

             Appl. Phys. Lett. 81 (2002) 835.

 

203.    Thermal Stability of Arc Evaporated High-Aluminium Content Ti 1-x Al x N Thin Films,

A. Hörling, L. Hultman, M. Odén, J. Sjölén, and L. Karlsson, J. Vac. Sci. Technol. A20 (2002) 1815.

 

204.   Plasma Characterization during Laser Ablation of Graphite in Nitrogen for the Growth of Fullerene-like

CNx Films,

A. A. Voevodin, J. G. Jones, J. S. Zabinski, and L. Hultman,

             J. Applied Physics 92 (2002) 724.

 

205.   Structural Characterization of Epitaxial Ti3SiC2 Films,

T. Seppänen, J.-P.Palmquist, P.O.Å. Persson, J.Emmerlich, J.Molina, J.Birch, U.Jansson, P.Isberg, L. Hultman

Proc. 53rd Annual Meeting of the Scandinavian Society for Electron Microscopy, Tampere, Finland 12-15 June, 2002 (Ed. J. Keränen and K. Sillanpää, University of Tampere, Finland, ISSN 1455-4518, 2002), p. 142-143.

 

206. Transition from amorphous boron carbide to hexagonal boron carbonitride thin films induced by nitrogen ion

             assistance,

             R. Gago , I. Jiménez, F. Agulló-Rueda, J.M Albella, Z. Czigany, and L. Hultman

             J. Appl. Phys. 92 (2002).

 

207.    Template Synthesis of Au/Co Multilayered Nanowires by Electrochemical Deposition

S. Valizadeh, J.M. George, P. Leisner, and L. Hultman,

Advanced Functional Materials 11-12 (2002) 766.

 

208. Growth, Structure, and Properties of Fullerene-like CN x Thin Films Produced by Pulsed Laser Ablation

    of Graphite in Nitrogen Background

A. A. Voevodin, J. G. Jones, J. S. Zabinski, Zs. Czigány, and L. Hultman,

             J. Appl. Phys. 92 (2002) 4980.

 

209. Epitaxial growth of AlN Layers on   SiC Substrates in a Hot-Wall MOCVD System,

A. Kakanakova-Georgieva, P.O.Å. Persson, U. Forsberg, J. Birch, L. Hultman, and E. Janzén

Phys. Stat. Sol. (c) 0 No. 1, 205-208 (2002).

 

210.         Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices,

             A.E. Åbom, E. Comini, G. Sberveglieri, N. Finnigan, L. Hultman, and M. Eriksson,

                Sensors and Actuators B89 (2002) 1

 

211.         Growth of Fullerene-like CN x Thin Solid Films by Reactive Magnetron Sputtering;

             Role of Low-Energy Ion Irradiation in Determining Microstructure and Mechanical Properties,

J. Neidhardt, Zs. Czigány, I.F. Brunell, and L. Hultman

             J. Appl. Phys. 93 (2003) 3002.

 

212. Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC,,

A. Kakanakova-Georgieva, U. Forsberg, C. Hallin, P.O.Å.Persson, L. Storasta, G. Pozina, J. Birch, L. Hultman,

and E. Janzén,

             Materials Science Forum Vols. 433-436 (2003) pp 991-994

 

213.   The influence of thermal annealing on residual stresses and mechanical properties of arc-evaporated

         TiCxN1-x (x = 0, 0.15 & 0.45) thin films

         L. Karlsson, G. Ramanath, M. Johansson, A. Hörling, and L. Hultman,  

         Acta Materialia, 50 (2003) 5103.

 

214. Imaging of Fullerene-like Structures in CN x Thin Films by Electron Microscopy; Sample Preparation Artefacts

    from Ion-Beam Milling,

             Zs. Czigány, J. Neidhardt, I.F. Brunell, and L. Hultman,

             Ultramicroscopy 94 (2003) 163.

 

215. Acoustic Streaming Enhanced Electrodeposition of Nickel,

Jens A.D. Jensen, Pawel Pocwiardowski , Per O.Å. Persson, Lars Hultman, and Per Møller

             Chem Phys. Lett. 368 (2003) 732.

 

216.         High Power Pulsed Magnetron Sputtered CrNx Films,

A.P. Ehiasarian, W.-D. Münz, L. Hultman, U. Helmersson, and I. Petrov,  

Surf. Coat. Technol. 163-164 (2003) 267.

 

217. Selective Epitaxy of Si1-xGex Layers for CMOS Applications,

             C. Menon, A.-C. Lindgren, P.O.Å. Persson, L. Hultman, and H.H. Radamson,

             J. of Electrochemical Soc. 150 (4) (2003) 253-257

 

218. Electrochemically Deposited Nickel Membranes; Process-Microstructure-Property Relationships,

             J.A.D. Jensen, P.O.Å. Persson, K. Pantleon, M. Odén, L. Hultman, and M.A.J. Somers,

             Surf. Coat. Technol. 172 (2003) 79

 

219.         Dislocation Loop Evolution in Ion-Implanted 4H-SiC

P.O.Å. Persson, L. Hultman, M.S. Janson, A. Hallén, R. Yakimova

             J. Appl. Phys. 93 (2003) 9395

 

220.         Role of Carbon in Boron Suboxide Thin Films,

D. Music, V.M.Kugler, Zs. Czigany, L. Hultman, and U. Helmersson

J. Vac. Sci. Technol. A21 (2003) 1355-1358. Times cited: 5

 

221.         Growth-Induced Defects in AlN/GaN Superlattices with Different Periods.

E. Valcheva, T. Paskova, G.Z. Radnoczi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki,

Physica B 340-342 (2003) 1129.

Part of which is also published by the same authors as: “Microstructure Evolution of MOVPE-Grown AlN/GaN Superlattices with Different Periods”,    Proc. 10th Europ. Workshop on MOVPE, Lecce , Italy , 8-11 June 2003

 

222. Structural, Electrical and Optical Properties of DLC Films Deposited by DC Magnetron Sputtering,

             E. Broitman, O.P.A. Lindquist, N. Hellgren , L. Hultman, and B.C. Holloway,

             J. Vac. Sci Technol. A21 (2003) L23.

 

223.   Structural and Mechanical Properties of DLC Films Deposited by DC Magnetron Sputtering,

                E. Broitman, N. Hellgren, Zs. Czigány, R. Twesten, J. Luning, I. Petrov, L.Hultman, and B.C.Holloway

             J. Vac. Sci. Technol. A21 (2003) 851.

 

224.   CrN Deposition by Reactive High Power Density Pulsed Magnetron Sputtering,

A.P. Ehiasarian, W.-D. Münz, L. Hultman, and U. Helmersson

             Vacuum Technology & Coating,   Proc. April (2003) pp 40-46

 

225. Structure of DC Sputtered Si-C-N Thin Films,

             G. Radnóczi, G. Sáfrán, Zs. Czigány, T. Berlind, and L. Hultman,

             This Solid Films, 440 (2003) 41

 

226. Kink Formation around Indents in Laminated Ti3SiC2 Thin Films Studied in the Nanoscale,

         J. Molina-Aldareguia, J. Emmerlich, J.-P. Palmquist, U. Jansson, and L. Hultman,

             Scripta Materialia 49 (2003) 155

 

227.   Epitaxial growth of tungsten carbide films using C60 as carbon precursor,

       J.-P. Palmquist, Zs. Czigány, L. Hultman, U. Jansson,

J. Cryst. Growth. 259 (2003) 12.

 

228.   Magnetron sputtered W-C films with C60 as carbon source,

             J.-P. Palmquist, Zs. Czigány, M. Odén, J. Neidhart, L. Hultman, U. Jansson

Thin Solid Films 444 (2003) 29

 

229.   Self-organized nanostructures in the Ti-Al-N system

             P. H. Mayrhofer, A. Hörling, L. Karlsson, J. Sjölén, C. Mitterer, L. Hultman,

Appl. Phys. Lett. 83(10) (2003) 2049

230.   Superelastic Fullerenelike Carbon Nitride Coatings Synthesized by Reactive Unbalanced Magnetron Sputtering

(Bodycote International Prize Paper Competition: Winner)

J. Neidhardt, L. Hultman

Surface Engineering 9 (2003) 1

 

231. Diagnostics of a N2 ’Ar direct current magnetron discharge for reactive sputter deposition of fullerene-like carbon

nitride thin films,

J. Neidhardt, L. Hultman, B. Abendroth, R. Gago, and W. Möller

J. Appl. Phys. 94 (2003) 7059.

Also selected for: Virtual Journal of Nanoscale Science & Technology--November 24, 2003, Volume 8, Issue 21

 

232. Temporal Development of the Composition of Zr and Cr Cathodic Arc Plasma Streams in a N 2 Environment,

             J. Rosén, A. Anders, L. Hultman, and J.M. Schneider

             J. Appl. Phys. 94 (2003) 1414.

 

233. Adatom/Vacancy Interactions and Interlayer Mass Transport in Small Two-Dimensional Pt Clusters on Pt(111),

       E.P. Münger, V. Chirita, and J.E. Greene, and L. Hultman,

       Surf. Sci. Lett. 539 (2003) L567

 

234. Growth and Characterization of Epitaxial Wurtzite Al 1-x In x N Thin Films Deposited by UHV Reactive Dual Magnetron Sputtering,

               T. Seppänen, G.Z. Radnoczi, S. Tungasmita, L. Hultman, and J. Birch,

                  In Silicon Carbide and Related Materials, Ed. P. Bergman and E. Janzén ;

               Materials Science Forum Vols 433-426, (Trans Tech Publ. , Switzerland , 2003) pp. 989-990

 

235.   Implementation of Hot-Wall MOCVD in the Growth of High-Quality GaN on SiC,

               L. Storasta, G. Pozina, J. Birch, L. Hultman, and E. Janzén,

                  In Silicon Carbide and Related Materials, Ed. P. Bergman and E. Janzén ;

Materials Science Forum Vols. 433-426, (Trans Tech Publ. , Switzerland , 2003) pp. 991—994.

 

236.         Characterization of the Metal-Insulator Interface of Field-Effect Chemical Sensors,

A.E. Åbom, R.T. Haasch, N. Hellgren, N. Finnegan, L. Hultman, and M. Eriksson,

                J. Appl. Phys. 93 (2003) 9760

 

237. Comparison of microstructure and mechanical properties of chromium nitride-based coatings deposited by high

power impulse magnetron sputtering and by the combined steered cathodic arc/unbalanced magnetron technique,

A.P. Ehiasarian, P. Eh. Hovsepian, L. Hultman, and U. Helmersson

             Thin Solid Films, 457 (2004) 270

 

238. Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

J. Hållstedt, E. Suvar, P. O. Å. Persson, L.Hultman, Y. -B. Wang and H. H. Radamson,

Applied Surface Science 224 46-50 (2004).

 

239.         In-situ Stress Measurement during Deposition of Fullerene-Like CNx Thin Films by Unbalanced Magnetron

  Sputtering; Formation of High Levels of Stress with 28 eV Ion Irradiation

  I. Brunell, J. Neidhardt, Zs. Czigány, and L. Hultman,

Phil Mag., 84 (2004) 395

 

240. Mn+1Axn Phases in the Ti-Si-C System Studied by Thin Film Synthesis and ab initio Calculations,

J.-P. Palmquist, S. Li, P. O. A. Persson, J. Emmerlich, O. Wilhelmsson, H. Högberg, M. Katnsnelsson,

B. Johansson, R. Ahuja, O. Eriksson, L. Hultman , and U. Jansson,

             Phys. Rev. B70 165401-1-13 (2004).

 

241. Charge State and Time-Resolved Plasma Composition of a Pulsed Zirconium Arc in a Nitrogen Environment,

J. Rosén, A. Anders, L. Hultman, and J.M. Schneider,

             J. Appl. Phys. 96 4793-4799 (2004).

 

242. ­Growth of Ti3SiC2 thin films by elementa l target magnetron sputtering

Jens Emmerlich, Jens-Petter Palmquist, Hans Högberg, Jon Molina, Zsolt Czigány, Szilvia Sasvári,

Per O. Å. Persson, Ulf Jansson, and Lars Hultman

          J. Appl. Pys. 96 4817-4826 (2004).

 

243.         Structural, Mechanical and Tribological Behavior of Fullerene-like and Amorphous Carbon Nitride Coatings

Synthesized by DC Reactive Magnetron Sputtering,

J. Neidhardt, L. Hultman, E. Broitman , T.W. Scharf, and I.L. Singer,

             Diamond and Related Materials 13 1882-1888 (2004).

 

244.         Structural Characterization of Wurtzite Al1-xInxN (0.1<x<0.9) Grown by Dual Reactive Magnetron Sputter

Deposition,

  T. Seppänen, P.O.Å. Persson, G.Z. Radnoczi, B. Pecz, Lars Hultman, and Jens Birch,

             Society of Vacuum Coaters (SVC) 47th Ann. Techn. Conf. Proc., Dallas , 2004. (6 pages)

 

245. Materials Science of Wear-Protective Nanostructured Thin Films,

L. Hultman, in” Nanostructured Thin Films and Nanodispersion Strengthened Coatings” (NATO Science Series II Mathematics, Physics and Chemistry – Vol 155; ed. by A.A. Voevodin et al, Kluwer Academic Publishers, Dordrecht, The Netherlands, 2004) Ch. 2, page 9-21.

246.         Correlated HREM and XPS Studies of Structure CNx (0≤x≤0.25) Thin Solid Films

J. Neidhardt, Zs. Czigány, and L. Hultman,

             Carbon 42 (2004) 2729

 

247. Arrhenius-type Temperature Dependence of the Chemical Desorption Processes active during Deposition of

Fullerene-Like Carbon Nitride Thin Films,

J. Neidhardt, H. Högberg and L. Hultman

             Surf. Sci.   569 (2004) L289

 

248.     Fullerene-like B-C-N Thin Films ; A Computational and Experimental Study ,

            Niklas Hellgren, Torun Berlind, Gueorgui Gueorguiev, Mats P. Johansson, Sven Stafström, and Lars Hultman, Materials Science & Engineering B113 (2004) 242

 

249. Sublimation Epitaxy of AlN on SiC; Growth Morphology and Structural Features,

             A. Kakanakova-Georgieva, P.O.Å Persson, R. Yakimova, L. Hultman, and E. Janzén,

             J. Cryst. Growth   273 (2004) pp 161-166

 

250. The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers,

J. Hallstedt,   M. Blomqvist, P.O.A. Persson, L. Hultman, and H.H.Radamson

J. Appl. Phys., 95 2397-402 (2004).

 

251.   Correlation between Bonding Structure and Microstructure in Fullerenelike Carbon Nitride Thin Films

             R. Gago, I. Jimménez, J. Neidhardt, B. Abendroth, I. Caretti, L. Hultman, and W. Möller

             Phys. Rev. B71. (2005) 125414.

 

252.        Growth and Characterization of MAX-Phase Thin Films,

H. Högberg, L. Hultman, J. Emmerlich, T. Joelsson, P. Eklund, J.M.Molina-Aldareguia,

J.-P. Palmquist, and O. Willhelmsson, and U. Jansson

             Surf. Coat. Technology, 193 (2005) 6

Number nine most cited article in the Journal of all articles published in that year and later.

 

 

253.   Mechanical Properties and Machining Performance of Ti 1-x Al x N Coated Cutting Tools,

A. Hörling, L. Hultman, M. Odén, J. Sjölén, and L. Karlsson.

Surf. Coat. Technol. 191 (2005) 384-392

Number one most cited article in the Journal of all articles published in that year and later (75 citations 2010).

 

254.         Cryogenic Deposition of Carbon Nitride Thin Solid Films by Reactive Magnetron Sputtering; Suppression of

the Chemical Desorption Processes,

  J. Neidhardt, H. Högberg, and L. Hultman

             Thin Solid Films 478 (2005) 34

 

255. Synthesis of Carbon Nitride Thin Films by Low-Energy Ion Beam Assisted Evaporation; on the Mechanisms for Fullerene-like Microstructure Formation,

  R. Gago, J. Neidhardt, M. Vinnichenko, U. Kreissig, Zs. Czigány, A. Kolitsch, L. Hultman, and W. Möller,

             Thin Solid Films 483 (2005) 89.

 

256. First-principles calculations on the role of CN precursors for the formation of fullerene-like Carbon Nitride   

                 Gueorgui Kostov Gueorguiev, Jörg Neidhardt, Sven Stafström, Lars Hultman,

Chem. Phys. Lett. 401 (2005) 288-295.

 

257. Phase Stability Tuning in the Zr-Nb-N Thin Films System for large Stacking Fault Denisty and Enhanced

             T. Joelsson, H. Hugosson, J. Molina, and L. Hultman

             Appl. Phys. Lett., 86 (2005).

 

258. Growth and Characterization of Ti 2 AlN MAX Phase Thin films,

             T. Joelsson, A. Hörling, and L. Hultman

             Appl. Phys. Lett. 86 (2005) 111913-1

 

259. Epitaxial Ti 2 GeC , Ti 3 GeC 2 , and Ti 4 GeC 3 MAX-Phase Thin Films Grown by Magnetron Sputtering,

             H. Högberg, P. Eklund, J. Emmerlich, J. Birch, and L.Hultman

                J. Mater. Research (Rapid Communications) 20 (2005) 779.

 

260.    First-principles Calculations on the Curvature Evolution and Cross-Linkage in Carbon Nitride   

                 Gueorgui Kostov Gueorguiev, Jörg Neidhardt, Sven Stafström, Lars Hultman,

                Chem Phys. Lett., 410 (2005) 228

 

261.   Microstructure and Nanoindentation Hardness of (001)-Oriented Epitaxial TiN/Cu Superlattices,

         H. Ljungcrantz, L. Hultman, and J.-E. Sundgren,                Accepted in Thin Solid Films.

 

262. Synthesis and characterization of Ti-Si-C compounds for electrical contact applikations,

Per Eklund, Jens Emmerlich, Hans Högberg, Per O. Å. Persson, Lars Hultman, Ola Wilhelmsson, Ulf Jansson,

Peter Isberg

Proceedings of IEEE Holm Conference on Electrical Contacts, Chicago, USA, 26-28 Sept. 2005, p. 277-283

 

263. Low-Energy Ion Irradiation Effects during Film Growth: Kinetic Pathways and Enhanced Migration for Surface

Ad-Atoms,

             D. Adamovic, E.P. Münger, V. Chirita, L. Hultman, and J.E. Greene,

             Appl. Phys. Lett. 86   (2005) 21915-1.

 

264. Growth of highly curved Al1-xInxN nanocrystals

by György Z. Radnóczi, Timo Seppänen, Béla Pécz, Lars Hultman and Jens Birch ,

Phys. Stat Sol. Rapid   Research Lett. 202 (2005) L76.

265.         Nanostructure formation during deposition of TiN/SiNx nanomultilayer films by reactive dual magnetron

sputtering,

Hans Söderberg, Jon Molina-Aldareguia, Lars Hultman, and Magnus Odén,

J. Appl. Phys. 97 (2005) 114327 .

 

266.         Electronic Structure of the MAX-Phases Ti3AC2 (A=Al, Si, Ge) Investigated by Soft X-ray Absorption          and Emission Spectroscopies,

      M. Magnuson, J.-P. Palmquist, S. Mattesini, S. Li, R. Ahuja, O. Eriksson, J. Emmerlich, O. Wilhelmsson, P. Eklund, H. Högberg, L. Hultman, and U. Jansson,

         Phys. Rev. B, 72 (2005) 245101

 

267. Structural, electrical and Mechanical Properties of Ti-Si-C Nanocomposite Thin Films,

             P. Eklund, J. Emmerlich, H. Högberg, J. Birch, O. Wilhelmsson, H. Ljungcrantz, P. Isberg, L. Hultman

             J. Vac. Sci. Technol. B23 (2005) 2486

 

268.         Nanoindentation Response of High-Performance Fullerene-like CNx Coatings,

             J.F. Palacio, S.J. Bull, J. Neidhardt, and L. Hultman,

             Thin Solid Films 494 (2005) 63.

 

269. Magnetron Sputter Epitaxy of wurtzite Al1-xInxN (0.1≤x≤0.9) by dual Reactive dc Magnetron Sputter Deposition

T.Seppänen, G.Z.Radnoczi, P.O.Å. Persson, L. Hultman, and J. Birch

             J. Appl. Phys. 97 (2005)

270. Influence of Si on the Microstructure of Arc Evaporated (Ti,Si)N Thin Films; Evidence for Cubic Solid Solutions and Their Thermal Stability

A. Flink, T. Larsson, J. Sjölén, L. Karlsson, and L. Hultman

             Surf. Coat. Technol. 200 (2005) 1535.

 

271. R.f. Dual Magnetron Sputtering Deposition and Characterization of Nanocomposite Al2O3/ZrO2 Thin Films,

             D. Trinh, H. Högberg, J. Andersson, M. Collin, I. Reineck, U. Helmersson, and L. Hultman,

             J. Vac. Sci. Technol. A24 (2006) 309.

 

272.         Structural properties of pulsed laser-deposited Carbon Nitride thin films,

H. Riascos, J. Neidhardt, G.Z. Radnoczi, J. Emmerlich, G. Zambrano, L. Hultman, P. Prieto

             Thin Solid Films, 497 (2006) 1-6.

 

273 . Microstructure and non-basal plane growth of epitaxial MAX phase Ti2AlN thin films

M. Beckers, N. Schell, R. M. S. Martins, A. Mücklich, W. Möller, and L. Hultman

J. Appl. Phys 99 (2006) 034902-1.

 

274. Water Adsorption on Lubricated Fullerene-Like CNx Films,

             E. Broitman, V.V. Pushkarev, A.J. Gellman, J. Neidhardt, A. Furlan, and L. Hultman,

             Thin Solid Films 515 (2006) 979-983.

275. Single-Crystal CrN/ScN Superlattice soft X-Ray Mirrors: Epitaxial Growth, Structure, and Properties,

J. Birch, T. Joelsson, F. Eriksson, N. Ghafoor, and L. Hultman

             Thin Solid Films 514 (2006) 10-19.

276. Deposition of Ternary Thin Films within the Ti-Al-C System by dc Magnetron Sputtering ,

O. Wilhelmsson, J.-P. Palmquist, E. Lewin, J. Emmerlich, P. Eklund, P.O.Å. Persson, H. Högberg, S. Li,

R. Ahuja, O. Eriksson, L. Hultman, and U. Jansson,

             J. Cryst. Growth 291 (2006) 290-300.

 

277.         Thermal Stability of Al-Cr-N Hard Coatings,

             H. Willmann, P.H. Mayrhofer, P.O.Å. Persson, A.E. Reiter, L. Hultman and C. Mitterer

             Scripta Materialia 54 (2006) 1848-1851.

 

278.         Ostwald Ripening of Interstitial-type Dislocation Loops in 4H-SiC

P. O. Å. Persson, L. Hultman, M. S. Janson, and A. Hallén

J. Appl. Phys. 100, 053521 (2006) (8 pages)

 

279.         GaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents:

             First-principles calculations

             Anelia Kakanakova, G.K. Gueorguiev, S. Stafström, L. Hultman, and E. Janzén.

             Chem. Phys. Lett. 431 (2006) 346-351

 

280. High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target,

J. Alami, P.Eklund, J. Emmerlich, O. Wilhelmsson, U. Jansson, H. Högberg, L. Hultman, and U. Helmersson

Thin Solid Films 515 (2006) 1731-1736.

 

281.    General Trend of the Mechanical Properties of the Ternary Carbides M 3 SiC 2 (M= Transition Metal),

         C.M. Fang, R. Ahuja, O. Eriksson, S. Li, U. Jansson, O. Wilhelmsson, and L. Hultman

Phys. Rev. B 74 (2006) 054106.

 

282.         Superior Material Properties of AlN on Vicinal 4H-SiC

A. Kakanakova-Georgieva, P.O.Å. Persson, A. Kasic, L. Hultman and E. Janzén

             J. Appl. Phys. 100 (2006) 036105

 

283.         Electronic Structure and Chemical Bonding in Ti4SiC3 Investigated by Soft X-ray Emission Spectroscopy and          First-principle Theory,

             M. Magnuson, M. Mattersini, O. Wilhelmsson, J. Emmerlich, J.-P. Palmquist, S. Li, R. Ahuja, L. Hultman, O.               Eriksson, and U. Jansson,

             Phys. Rev B 74, 205102 (2006)

 

284. First Principles Calculations of the Structural Evolution of Solid Fullerene-like CPx,

G.K. Gueorguiev, A. Furlan, H. Högberg, S. Stafström, and L Hultman

                Chem. Phys. Lett. 426 (2006) 374-379.

 

285. Fullerene-like CPx: A First Principles Study of the Relative Stability of Precursors and Defect Energetivs during Synthetic Growth,

A. Furlan, G.K. Gueorguiev, H. Högberg, S. Stafström, and L Hultman

             Thin Solid Films 515 (2006) 1028-1032.

 

286.   Epitaxial stabilization of cubic-SiNx in   TiN/SiNx multilayers

Hans Söderberg, Magnus Odén, Jon M. Molina-Aldareguia, Tommy Larsson, and Lars Hultman,

Applied Physics Letters 88(2006): p. 191902-1 - 191902-3

 

287. Enhanced intra- and interlayer mass transport on Pt(111) via 5–50 eV Pt atom impacts on two-dimensional Pt clusters D. Adamovic, V. Chirita, E.P. Münger, L. Hultman and J.E. Greene

         Thin Solid Films 515 (2006) Pages 2235-2243

 

288. Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

Evgenia Valcheva, J. Birch, Per Persson, Sukkaneste Tungasmita, Lars Hultman

J. Appl. Physics 100 (2006) 123514.

 

289.         Photoemission Studies of Ti3SiC2 and Nanocrystalline-TiC/amorphous-SiC Nanocomposite Thin Films,

P. Eklund, C. Virojanadara, J. Emmerlich, L.I.Johansson, H. Högberg, and L. Hultman.

Phys. Rev. B74 (2006) 045417-1-7.

 

290. Mixing and decomposition thermodynamics of   c-Ti 1-x Al x N from first-principles calculations

B. Alling, A.V. Ruban, A. Karimi, O.E. Peil, S. I. Simak, L. Hultman, and I Abrikosov,

Phys. Rev. B 75 (2007) 045123

 

291.         Silicon-Metal Clusters: Nano-Templates for Cluster-Assembled Materials

             G.K. Gueorguiev, J.M.Pacheco, S. Stafström, L. Hultman

             Thin Solid Films 515 (2006) 1192-1196

 

292          Annealing Studies of Nanocomposite Ti-Si-C thin Films with Respect to Phase Stablity and Tribological

Performance,

M. Rester, J. Neidhardt, P. Eklund, and, L. Hultman

             Materials Science and Engineering A 429 (2006) 90-95.

 

293.    Growth and Property Characrterization of Epitaxial MAX-Phase Thin Films from the Ti(n+1){Si,Ge, Sn}Cn Systems,

H. Högberg, J. Emmerlich, P. Eklund, O. Wilhelmsson, J.-P. Palmquist, U. Jansson, and L. Hultman

Advances in Science and Technology 45 (2006) 2648-2655.

 

294    248 nm Cathodoluminescence in AlInN(0001) Thin Films Grown by Low Temperature Magnetron Sputter Epitaxy,

T. Seppänen, L. Hultman, and J. Birch

Appl. Phys. Lett. 89 (2006)   181928.

 

295.         Deviations from Vegard’s Rule in Al1-xInxN (0001) Alloy Thin Films Grown by Magnetron Sputter Epitaxy",

                T. Seppänen, L. Hultman, and J. Birch, M. Beckers, U. Kreissig,

                J. Appl, Phys. 101 (2007) 043519 1-6.

 

296.         Structure and mechanical properties of arc evaporated Ti-Al-O-N thin films

                J. Sjölén and L. Karlsson, S. Braun, R. Murdey, A. Hörling and L. Hultman

                Surf. Coat. Technol. 201(2007) 6392-6403.

 

297.         Interface Structure in Superhard TiN/SiNx Nanolaminates and Superlattices; Film Growth and ab initio      Calculations,

             Lars Hultman, Javier Bareño, Axel Flink, Hans Söderberg, Karin Larsson, Vania Petrova, Magnus Odén, J. E.            Greene, and Ivan Petrov

                Phys. Rev. B75 (2007) 155437.

 

298.         Thermal Stability of MAX-phase Ti3SiC2 Thin Films,

J. Emmerlich, H. Högberg, O. Wilhelmsson, U. Jansson, D. Music, J.M. Schneider, and L Hultman,

             Acta Materialia 55 (2007) 1479-1488.

 

299.   Micro- and Macroscale tribological behavior of Epitaxial Ti3SiC2 this films,

       J. Emmerlich, G. Gassner, P. Eklund, H. Högberg, and L. Hultman,

          Wear (in press 2007).

 

300. Electrical Resistivity of Ti(n+1AC(n) {A=Si, Ge, Sn; n=1-3) thin films,

       J. Emmerlich, P. Eklund, D. Rittrich, H. Högberg, and L. Hultman

       J. Mater. Res. 22 (2007) 2279-2287.

 

301.         Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

             P. Eklund, A. Murugaiah, J. Emmerlich, Zs. Czigàny, J. Frodelius, M. W. Barsoum, H. Högberg, and L. Hultman,

             J. Cryst Growth. 304 (2007) 264-269

 

302.         RHEED Studies during growth of TiN/SiNx/TiN Trilayers on /MgO(001)

             Hans Söderberg, Jens Birch, Lars Hultman, and Magnus Odén

                Surface Science 601 (2007) 2352-2356.

303.         Intrusion-Type Deformation Mechanism in Epitaxial Ti3SiC2/TiC 0.67 Nanolaminates

             O. Wilhelmsson, P. Eklund, F. Giuliani, H. Högberg, L. Hultman, U. Jansson

                Applied Physics Letters 91 (2007) 123124-1--3.

 

304.         Time-resolved Spectroscopy of Freestanding GaN Layers Grown by Halide Vapor Phase Epitaxy

             G. Pozina, C.G. Hemmingsson, J.P. Bergman, D. Trinh, L. Hultman, and B. Monemar,

             Superlattices and Microstructures (2007) in press,

 

305.         Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

             G. Pozina , C. Hemmingsson , J. P. Bergman , D. Trinh , L. Hultman , and B. Monemar

             Applied Physics Letters 90, 221904 (2007) /July 2007 issue of Virtual Journal of Ultrafast Science./

 

306.         Epitaxial TiC/SiC Multilayers

             P. Eklund, H. Högberg, and L. Hultman

             Phys. Stat. Sol Rapid Research Letters 1 (2007) 113-115.

 

307.         Topotaxial Growth of Ti2AlN by Solid State Reaction in AlN/Ti(0001) Multilayer Thin Films

                C. Höglund, M. Beckers, N. Schell, J. v. Bornay, J. Birch, L. Hultman

                Applied physics letters, 90-17, 174106 (2007)

 

308.   Magnetron Sputtering of Ti3SiC2 Thin Films from a compound Target,

       P. Eklund, M. Beckers, J. Frodelius, H. Högberg, and L. Hultman,

       J. Vac. Sci. Technol. A (2007) 1381-1388

 

309.         Kintetic Pathways Leading to Layer-by-Layer Growth from Hyperthermal Atoms; A Multi-Billion Time Step MD     Study D. Adamovic, V. Chirita, E.P. Münger, L. Hultman, J.E. Greene

             Phys. Rev. B76 (2007) 115418.

             Also, Cover Image of the September PRB Issue on Line: http://prb.aps.org/kaleidoscope/September2007

 

310          Epitaxial Ti2AlN(0001) Thin Films Deposited by Dual Target Reactive Magnetron Sputtering,

             P. O. Å. Persson, S. Kodambaka, I. Petrov, and L. Hultman

                Acta Materialia 55 (2007) 4401-4407

 

311.         Microstructure and electrical properties of Ti-Si-C-Ag nanocomposite thin films,

             Per Eklund, T. Joelsson, H. Ljungcrantz, O. Wilhelmsson, Zs. Czigany, H. Högberg, anbd L. Hultman

                Surf. Coat. Technol. 201 (2007) 6465-6469

 

312.     Thermal stability and age hardening of   supersaturated AlCrN hard coatings

         H. Willmann, P. H. Mayrhofer, L. Hultman and C. Mitterer,

         Internat. Heat Treatment and Surface Engineering 1 /2007) 75-79.

313.         Ta4AlC3: Phase determination, polymorphism and deformation

                P. Eklund, J.-P. Palmquist, J. Höwing, D.H. Trinh, T. El-Raghy, H. Högberg and L. Hultman

                Acta Materialia 55 (2007) Pages 4723-4729

 

314.   Spinodal decomposition of cubic Ti–Al–N; Comparison between Experiments and Modeling

             P. H. Mayrhofer, L. Hultman, J. M. Schneider, P. Staron, H. Clemens

             International Journal of Materials Research (formerly: Zeitschrift fuer Metallkunde). 98 (2007) p 1054-1059

 

315.         Growth and characterization of TiN/SiNx(001) superlattice films

             Hans Söderberg, Axel Flink, Jens Birch, Per O.Å. Persson, Manfred Beckers, Lars Hultman, and Magnus Odén

                J. Materials Research 22 (2007) 3255.

 

316.         Deposition of single-crystal Ti2AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target

             T. Joelsson, A. Flink, and L. Hultman

             J. Appl. Phys. 102 (2007) 074918-1--3.

 

317.   Single-Crystal Growth of NaCl-Structure Al-Cr-N Thin Films on MgO(001) by Magnetron Sputter Epitaxy,

       H. Willmann, M. Beckers, F. Giuliani, J. Birch, P.H. Mayrhofer, C. Mitterer, and L. Hultman

       Scripta Materials 57 (2007) 1089-1092

 

318.   Nucleation and Growth of Ti2AlN Thin Films During Reactive Sputtering onto MgO(111),

       M. Beckers, N. Schell, R.M.S. Martins, A. Mücklich, W. Möller, and L. Hultman

             J. Appl. Phys. 102 (2007) 074916 .

 

319.   Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasi-bulk GaN templates,

             G. Pozina, B. Monemar, P.P. Paskov, C. Hemmingsson, L. Hultman, H. Amano, I. Akasaki, T. Paskova, S. Figge,      D. Hommel, A. Usui,

                Applied Physics Letters   91 (2007) 221901.

 

320.         Growth and physical properties of epitaxial metastable Hf 1 - x Al x N alloys deposited on MgO(001) by ultrahigh            vacuum reactive magnetron sputtering

    Howe, B.Bareno, J. ; Sardela, M. ; Wen, J.G. ; Greene, J.E. ; Hultman, L. ; Voevodin, A.A. ; Petrov, I.

          Surface and Coatings Technology 202 (2007) p 809-814

 

321.   Bonding Mechanisms in the Nitrides Ti2AlN and TiN; an Experimental and Theoretical Investigation,

       M. Magnuson, M. Mattesini, S. Li, C. Höglund, M. Beckers, L, Hultman, O. Eriksson

          Phys. Rev. B76 (2007) 195127-1--9.

 

322.   Metastability of the UV Luminescence in Mg-doped GaN Layers Grown by MOVPE on Quasi-bulk GaN Templates,

G. Pozina, B. Monemar, P.P.Paskov,…,L. Hultman

                Physica B 401 (2007) 302-306.

 

323.         Influence of the normalized ion flux on the constitution of Al2O3 films deposited by plasma assisted CVD,

                 D. Kurapov, P. Persson, D. Trinh, L. Hultman, and J.M. Schneider

J. Vac. Sci. Technol. A25 (2007) 831-836

 

324. Structure and Thermal Stability of Arc-Evaporated (Ti0.33Al0.67)1-xSiNx Thin Films,

             A. Flink, J.M.Andersson, B. Alling, I. Abrikosov, and L. Hultman

             Thin Solid Films 517 (2008) 714-721

 

325.         Thermal Stability, Microstructure, and Mechanical   Properties of Ti1-zZrzN Thin Films

  A. Hörling, J. Sjölén, H.Willmann, T. Larsson, M. Odén, and L. Hultman,

       Thin Solid Films Vol 516/18 (2008) pp 6421-6431.

326.     Nanocomposite Al2O3-ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

         D. H. Trinh, M. Ottosson, M. Collin, I. Reineck, L. Hultman, and H. Högberg

               Thin Solid Films 516 (2008) 4977-4987.

 

327.   Effects of Ion-Assisted Growth on the Layer Definition of Cr/Sc Multilayers,

       N. Ghafoor, F. Eriksson, P.O.Å. Persson, L. Hultman, and J. Birch,

       Thin Solid Films 516 (2008) p. 982-990.

 

328.         Sc3AlN - A New Perovskite,

             Carina Höglund, Jens Birch, Manfred Beckers, Björn Alling, Zsolt Czigány, Arndt Mücklich, and Lars Hultman,        European Journal of Inorganic Chemistry, Rapid Communication (2008) 1193–1195

 

329.   Bonding and Microstructural Analysis of Carbide-based Nanocomposite Thin Films using Photo Electron          Spectroscopy and TEM,

       E. Lewin, P. Persson, M. Lattemann, M. Stüber, M. Gorgoi, U. Albers, A. Sandell, O. Wilhelmsson, F. Schäfers,   W. Braun, J. Halbritter, S. Ulrich, W. Eberhardt, L. Hultman, H. Siegbahn, S. Svensson, and U. Jansson,

       Surf. Coat. Technol. Vol 202/15 (2008) pp 3563-3570

 

330.   Deposition and characterization of the V-Ge-C system by dc magnetron sputtering

       O. Wilhelmsson, P. Eklund, H. Högberg, L. Hultman, and U. Jansson

          Acta Materialia 56 (2008) 2563-2569.

 

331.   Incorporation of Nitrogen Imprity in Cr/Sc Multilayers giving Improved Soft-X-ray Reflectivity,

       N. Ghafoor, F. Eriksson, E. Gullikson , L. Hultman, and J. Birch,

       Appl. Phys. Letters 92 (2008) 091913

 

332.         First-principles Study of the Effect of Nitrogen Vacancies on the Decomposition Pattern in cubic Ti 1-x Al x N

B. Alling, A. Karimi, L. Hultman, and I Abrikosov,

                Appl. Phys. Lett.   92, 071903 (2008).

 

333.         Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich

             Al(1-x)In(x)N Films Grown on Sapphire

       V. Darakchieva , M. Beckers, M.Xie, L.Hultman, B.Monemar, J.-F.Carlin, E.Feltin, M.Gonschorek, N.Grandjean

       J. Appl. Phys. 103 (2008) 103513.

 

334.   Direct Current Magnetron Sputtering Deposition of Nanocomposite Alumina-Zirconia Thin Films,

       D.H.Trinh, T. Kubart, T. Nyberg, M. Ottosson, L. Hultman, and H. Högberg,

          Thin Solid Films 516 (2008) 8352-8358

 

335.         TEM Studies and Simulation of the Indentation Response of Super-Elastic

             Fullerene-Like Carbon Nitride Thin Films

J. Neidhardt,   J. M. Molina-Aldareguia, C. Walter, M. Herrmann, and L. Hultman

             J. Appl. Phys. 103 (2008) 123515

 

336. Synthesis of Phosphorus-Carbide Thin Films by Magnetron Sputtering.

             A. Furlan,   G.K. Gueorguiev, Zs. Czigány, H. Högberg, S. Stafström, and L. Hultman

             Phys. Stat. Solidi Rapid Research Letters 2 (2008) 191-193 .

 

337.         Strain and Compositional Analyses of Al-rich               Al(1-x)In(x)N Films Grown by MOVPE; Impact on the              Applicability of Vegard's rule

       V. Darakchieva , M. Beckers, L.Hultman, M.Xie, B.Monemar, J.-F.Carlin, and N.Grandjean

       Physica Status Solidi (c). 5 (2008) pp. 1859-1862.

 

338.   Anisotropy in the electronic structure of V2GeC investigated by soft x-ray emission spectroscopy and first-principles theory,

M. Magnuson, O.Wilhelmsson, M. Mattesini, S. Li, R. Ahuja, O. Eriksson, H. Högberg, L. Hultman, U. Jansson, Phys. Rev. B 78 (2008) 035117;   Editors' Suggestion.

 

 

339.         Water Adsorption on Fullerene-like Carbon Nitride Overcoats

             E. Broitman, G.K. Gueorguiev, A.Furlan, N.T. Son, A.J. Gellman, S. Stafström, and L. Hultman

             Thin Solid Films 517 (2008) 1106-1110.

 

340.   Experiments and Modelling of Reactive Sputtering using two Reactive Gases and two Targets

       T. Kubart, D.H.Trinh, L. Liljeholm, L. Hultman, H. Högberg, and T. Nyberg,

          J. Vac. Sci. Technol. A26 (2008) 565-570

 

341.         Ti2AlC Coatings Deposited by High-Velocity Oxy-Fuel Spraying

             J. Frodelius, M.Sonestedt, S. Björklund, J.-P.Palmquist, K. Stiller, H. Högberg, and L. Hultman

                Surf. Coat. Technol. 202 (2008) 5976-5981

 

342.         Electronic Structure Investigation of the Inverse Perovskite Sc3AlN

             M. Magnuson, M. Mattesini, C. Höglund, I. Abrikosov, J. Birch, and L. Hultman

             Phys. Rev. B 78 (2008) 235102-1 - 235102-7 .

 

343.         Spinodal Decomposition Products in Arc-Evaporated TiAlN/TiN Multilayers

             A. Knutsson, M. Odén, P.O.Å.Persson, L. Hultman, and M. Johansson

             Appl. Phys. Lett. 93 (2008) 143110.

 

344.   Epitaxial Growth of NaCl-Structure Al-Cr-N Thin Films on MgO(111),

       H. Willmann, M. Beckers, J. Birch, P.H. Mayrhofer, C. Mitterer, and L. Hultman

       Thin Solid Films 517 (2008) 598-602

 

      345.         Atomic Scale Interface Eng. by Modulated Ion Assisted Deposition Applied to Soft X-Ray Multilayer Optics,

      F. Eriksson, N. Ghafoor,   F. Schäfers, E.M. Gullikson, S. Aouadi, S. Rohde, Lars Hultman, and Jens Birch,

             Applied Optics 47 (2008) 4196.

 

346.         Weak Electronic Anisotropy in the Layered Nanolaminate Ti2GeC

       T.H.Scabarozi, P.Eklund,J.Emmerlich,H.Högberg,T.Meehan, J.Hettinger,P.Finkel,S.E.Lofland, L.Hultman, M.W.Barsoum

             Solid State Communications 146 (2008) 498-501.

 

347.   Reflectivity and Structural Evolution of Cr/Sc and N-Containing Cr/Sc Multilayers during Thermal Annealing,

       F. Eriksson, N. Ghafoor, L. Hultman, and J. Birch

             J. Appl. Phys. 104 (2008) 063516

 

348.         Effects of Ion-Assited Growth on the Layer Definition in Cr/Sc Multilayers

             N. Ghafoor, F. Eriksson, P.O.Å.Persson, L. Hultman, and J. Birch

             Thin Solid Films 516 (2008) 982-990

 

349.         Influence of different atmospheres on the thermal decomposition of Al-Cr-N coatings

             Paul H. Mayrhofer, Herbert Willmann, Lars Hultman, Christian Mitterer

             J. Physics D, Applied Physics 41 (2008) 155316 (5pp)

 

350.   Nano-wire Formation by Self-Assembly of Silicon-Metal Cage-like Molecules,

       G.K. Gueorguiev, S. Stafström, and L. Hultman.

             Chem. Phys. Lett. 458 (2008) 170-174

 

351.         Hardness evolution of Al-Cr-N coatings under thermal treatment

         H. Willmann, P.H. Mayrhofer, L. Hultman, and C. Mitterer

             J. Materials Research 23 (2008) 2880-2885

352. Metastability of fcc-related Si-N phases

             Björn   Alling,   E.I.   Isaev,   Axel   Flink,   Lars   Hultman,   Igor   Abrikosov

                Physical Review. B78  (2008) pp 132103-1 - 132103-4

 

353.         Lattice Parameters, deviations from Vegard’s Rule, and E-2 Phonons in InAlN

V. Darakchieva, M.Y.Xie, F. Tasnadi,…,L. Hultman,

Appl. Phys. Lett. 93 (2008) 261908

 

354.         Time-resolved Photoluminescence Properties of AlGaN/AlN/GaN High-Electron Mobility Transistor Structures           Grown on 4H-SiC Substrate,

             G. Pozina, C. Hemmingsson, U. Forsberg, L. Hultman et al.,

                J. Appl. Phys. 104 (2008) 113513

 

355.         Dielectric properties of Ti2AlC and Ti2AlN MAX phases: The conductivity anisotropy

             Noël   Haddad ,   Enric   Garcia-Caurel ,   Lars   Hultman ,   Michel W   Barsoum ,   Gilles   Hug

             Journal of applied physics 104 (2008) pp 0235311 – 02353110

 

356.         Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type

             SiC for High-Temperature Gas Sensors,

             Ariel Virshup, D. Lukco, Anita Lloyd Spetz, Kristina Buchholt, L Hultman, and L. Porter

                Journal of Electronic Materials 38 (2009) 569

 

357.         Effects of O and N Impurities on the Nanostructural Evolution During Growth of Cr/Sc Multilayers,

                N Ghafoor, F Eriksson, A Mikhaylushkin, I Abrikosov, E Gullikson, U Kressig, M Beckers, L Hultman, J Birch

                J. Materials Research 24 (2009) pp. 79-95.

 

358.   Free-standing AlN single crystals enabled by self-organization of 2H ‑ SiC pyramids on 4H-SiC substrates

             G.R.Yazdi, M. Beckers, F. Giuliani, M. Syväjärvi, L. Hultman, and R. Yakimova

             Appl. Phys.Lett. 94 (2009) 082109 OI:10.1063/1.3085958

 

359. Elastic properties and electrostructural correlations in ternary scandium-based cubic inverse perovskites:

             A first-principles study

              Maurizio Mattesini, Martin Magnuson, Ferenc Tasnádi, Carina Höglund,  Igor A. Abrikosov,  Lars Hultman

             Phys Rev. B 79 (2009) 125122.

 

360.        Stability of Ternary Perovskites Sc3EN (E=B, Al , Ga ) from First-Principles Theory,

             A.S. Mikhaylushkin, C. Höglund, J. Birch, Zs. Czigany, L. Hultman, S.I. Simak, B. Alling, and I.A. Abrikosov,

             Phys. Rev. B. 79 (2009) 134107. URL: http://link.aps.org/abstract/PRB/v79/e134107

DOI: 10.1103/PhysRevB.79.134107

 

361          Microstructural characterization of the tool-chip interface enabled by focused ion

             beam and analytical electron microscopy

             A. Flink, R. M’Saoubi, F. Giuliani, J. Sjölén, T. Larsson, P.O.Å. Persson, M.P. Johansson, L. Hultman ,

             Wear 266 (2009) 1237-1240.

 

362.         Effect of oxygen exposure on electrical conductivity and gas sensitivity of ZnO nanostructured films

             V. Khranovskyy, J. Eriksson, A. Lloyd Spetz, R. Yakimova, and L. Hultman,

             Thin Solid Films 517 (2009) 2073-2078

 

362.   Phase identification in g - and k -alumina coatings by cathodoluminescence

G. Pozina, D.H. Trinh, H. Högberg, M. Collin, I. Reineck, and L. Hultman

Scripta Materialia, 61 (2009) 379-382 .

 

363.         The Location and Effects of Si in (Ti1-xSix)Ny Thin Films

Axel Flink, Manfred Beckers, Jacob Sjölén, Tommy Larsson, Slawomir Braun, Lennart Karlsson, Lars Hultman,

J. Mater. Research 24 (2009) 2483-2498.

 

364.         Cubic Sc(1-x)Al(x)N Solid Solution Films Deposited by Reactive Magnetron Sputter Epitaxy onto ScN(111)

C. Höglund, J. Bareño, J. Birch, and L. Hultman

J. Appl. Phys. 105 (2009) 113517.

 

365.         Electrochemically based low-cost high precision processing in MOEMS packaging

       N. Gunnarsson, P. Leisner, X. Wang, M. Svensson, C. Vieider, L. Hultman

Electrochimica Acta , Volume 54, Issue 9, 30 March 2009, Pages 2458-2465

 

366.   Spectroscopic ellipsometry characterization of amorphous carbon and amorphous, graphitic and fullerene-like carbon nitride thin films,

T. Berlind, A. Furlan, Z. Czigany, J. Neidhardt, L. Hultman, and H. Arwin

Thin Solid Films 517 (2009) Pages 6652-6658

 

367.         On the Stability of Mg Nanograins to Coarsening after Repeated Melting

S. Amini, J. Córdoba, L. Daemen, A. McGhie, C. Ni, L. Hultman, M. Odén, M. Barsoum,

NANO LETTERS 9 (2009) 3082-3086

 

368.   The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films

M. Beckers, C. Höglund, C. Baehtz, R. M. S. Martins, P. O. Å. Persson, L. Hultman, and W. Möller

J. Appl. Phys. 106 (2009) 064915 .

 

369.         Electronic Structure and Chemical Bonding Anisotropy Investigation of wurtzite AlN

M. Magnuson, M. Mattesini, C. Höglund, J. Birch, and L. Hultman

Phys. Rev. B. 80 (2009) 155105

370.         Aligned AlN nanowires by self-organized vapor-solid growth

G.R. Yazdi, P.O.Å. Persson, D. Gogova, R. Fornari, L. Hultman, M. Syväjärvi, and R. Yakimova,

Nanotechnology 20 (2009) 495304 (7pp)   doi: 10.1088/0957-4484/20/49/495304 .

 

371.   Dangling bond energetics in Carbon Nitride and Phosphorus Carbide Thin Films with Fullerene-like and amorphous structure

G. K. Gueorguiev, E. Broitman, A. Furlan, S. Stafström , L. Hultman

Chemical Physics Letters 482 (2009) 110-113.

 

372.         Electronic Structure and Chemical Bonding of nc-TiC/a-C Nanocomposites,

M. Magnuson, E. Lewin, L. Hultman, and U. Jansson

Phys. Rev. B80 (2009) 235108 7 pages

http://www.chemicalnet.se/iuware.aspx?pageid=751

http://www.chemicalnet.se/iuware.aspx?pageid=792&ssoid=112125

http://www.liu.se/forskning/forskningsnyheter/1.96834?l=sv

 

373.         Pressure enhancement of the isostructural cubic decomposition in Ti 1−x Al x N

B. Alling, _ M. Odén, L. Hultman, and I. A. Abrikosov

Appl. Phys. Lett. 95 (2009) 181906

 

374.         Water Adsorption on Phosphorous-Carbide Thin Films

E. Broitman, A. Furlan, G.K. Gueorguiev, Zs. Czigány, A.M. Tarditi, A.J. Gellman, S. Stafström, L. Hultman

Surf. Coat. Technol. 204 (2009) 1035-1039.

 

375.         Phase transformation in kappa- and gamma-Al2O3 coatings on cutting tool inserts

D. Trinh, K. Back, G. Pozina, H. Blomqvist, M. Collin, I. Reineck, L. Hultman, and H. Högbeerg,

Surf. Coat. Technol. 203 (2009) 1683-1688

DOI: 10.1016/j.surfcoat.2008.12.028

 

376.         Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films

Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Åkerman, Mikael Östling, Lars Hultman, and Shi-Li Zhang,

Appl. Phys. Lett. 96 (2010) 031911

 

377.         Heteroepitaxial ZnO nano hexagons on p-type SiC,

V. Khranovskyy, I. Tsiaoussis, G.R. Yazdi, L. Hultman, R. Yakimova,

Journal of Crystal Growth 312 (2010) 327–332.

 

378.         Sputter deposition from a Ti 2 AlC target: Process characterization and conditions for growth of Ti 2 AlC,

J. Frodelius, P. Eklund, M. Beckers, P.O.Å. Persson, H. Högberg, L. Hultman

Thin Solid Films 518 (2010) 1621–1626

 

379.         Microstructure of High Velocity Oxy-Fuel sprayed Ti 2 AlC coatings

Marie Sonestedt, Jenny Frodelius, Jens-Petter Palmquist, Hans Högberg, Lars Hultman, Krystyna Stiller

J Mater. Sci. Volume 45 (2010) 2760-2769

 

380.         Characterization of worn Ti-Si cathodes used for reactive cathodic arc evaporation,

J.Q. Zhu, A. Eriksson, N. Ghafoor, M. P. Johansson, J. Sjölén, L. Hultman, J. Rosén, M. Odén

J. Vac. Sci. Technol. A28 (2010) 347-353

 

381.   Time and Energy Resolved Ion Mass Spectroscopy Studies of the Ion Flux during High Power Pulsed Magnetron Sputtering of Cr in Ar and Ar/N2 Atmospheres,

G. Greczynski and L. Hultman

Vacuum 84 (2010) 1159-1170

 

382.         Age hardening in arc evaporated ZrAlN thin films

L. Rogström, L.J.S. Johnson, M.P. Johansson, M. Ahlgren, L. Hultman, and M. Odén

Scripta Materialia 62 (2010) 739-741   doi: 10.1016/j.scriptamat.2010.01.049

 

383.         Electronic Structure of GaN and Ga Investigated by Soft-X-ray Spectroscopy and First-Prinicples Methods

M. Magnuson, M. Mattesini, C. Höglund, J. Birch, and L. Hultman

Phys. Rev. B 81 (2010) 085125 (8 pages)

URL: http://link.aps.org/doi/10.1103/PhysRevB.81.085125

384.         Electronic mechanism for toughness enhancement in Ti xM 1-xN (M=Mo and W)

D.G. Sangiovanni, V. Chirita, L. Hultman

Phys. Rev. B. 81 (2010) 104107

 

385.         Interpretation of electron diffraction patterns from amorphous and fullerene-like carbon allotropes,

Zsolt Czigány and L. Hultman

Ultramicroscopy 110 (2010) 815-819

Winner of the European Microscopy Society Outstanding Paper Award in Materials Science 2010

386.         Carbide and Nanocomposite Thin Films in the Ti-Pt-C System

Erik Lewin, Kristina Buchholt, Jun Lu, Lars Hultman, Anita Lloyd-Spetz, Ulf Jansson

Thin Solid Films 518 (2010) 5104-5109.

 

387.         Industrial-scale deposition of highly adherent CNx films on steel substrates

E. Broitman, Zs. Czigány, G. Greczynski, J. Böhlmark, R. Cremer, L. Hultman

Surf. Coat. Technol. 204 (2010) 3349- 3357

 

388.         Origin of the enhanced piezoelectric response in wurtzite ScxAl1.xN Alloys,

F. Tasnádi, B. Alling, C. Höglund, G. Wingqvist, J. Borch, L. Hultman, and I.A. Abrikosov

          Phys. Rev. Lett. 104 (2010) 137601

389.         Heteroepitaxial Growth of Indium Phosphide from Nano-openings made by masking on a Si(001) wafer

C. Junesand, W. Metaferia, F. Olsson, M.Avella, J. Jimenez, G. Pozina, L. Hultman and S. Lourdudoss

22 nd IPRM 2010 Conf. Proc., 232-235, 2010.

       http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5516052

 

390. Wurtzite-structure Sc1-xAlxN Solid Solutions Grown by Reactive Dual Magentron Sputter Epitaxy – Structural Characterization and First-principles Calculations,

C. Höglund, J. Birch, B. Alling, J. Bareno, Zs.Czigany, P.O.Å.Persson, G.Wingqvist, A.Zukauskaite, L. Hultman

J. Appl. Phys 107 (2010) 123515.

 

391. Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions,

C. Höglund, B. Alling, J. Birch, M. Beckers, P.O.Å.Persson, C. Baehtz, Zs. Czigany, J. Jensen, and L. Hultman

Phys. Rev. B 81 (2010) 224101   Editors' Suggestion

 

392.         Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates

M. Beckers, F. Eriksson, J. Lauridsen, C. Baehtz, J. Jensen, and L. Hultman,

Phys. Status Solidi Rapid Research Letters 4 (2010) 121-123

 

393.         Epitaxy of Ultrathin Ni1-xPtx-silicide films on Si(001)

Jun Lu, Jun Luo, Shi-Li Zhang, Mikael Östling, and Lars Hultman

Electrochemical and Solid-State Letters 13 (2010) H360-H362

 

394.         Single-monolayer SiNx embedded in TiN: A First Principles Study,

T. Marten, E. Isaev, B. Alling, L. Hultman, and I. Abrikosov,

Phys. Rev. B1 (2010) 212102

 

395.         High-rate deposition of amorphous and nanocomposite Ti-Si-C multifunctional coatings

J. Lauridsen, P. Eklund, T. Joelsson, H. Ljungcrantz, Å. Öberg,

E. Lewin, U. Jansson, M. Beckers, H. Högberg and L. Hultman

Surf. Coat. Technol. 205 (2010) 299-305.

 

396. The Reactivity of Ti2AlC and Ti3SiC2 with SiC Fibers and Powders up to Temperatures of 1550 °C.

Spencer, C.B., Cordoba , J., Sakulich, A., Obando, N., Radovic, M., Oden, M., Hultman, L., and Barsoum, M.W.,

Accepted, Journal of the American Ceramic Society, Manuscr ID JACERS-27590.R2, (2010).

 

397.         Microstructure evolution of Ti-Si-C-Ag nanocomposite coatings deposited by dc magnetron sputtering

J. Lauridsen, P. Eklund, J. Jensen, H. Ljungcrantz, Å. Öberg, E. Lewin, U. Jansson, A. Flink, H. Högberg,

L. Hultman,

Acta Materialia 58 (2010) 6592-6599.

398.         Real-time control of AlN incorporation in epitaxial Hf 1-x Al x N(001) using high-flux,

low-energy (10-40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target

B. M. Howe, E. Sammann, J. G. Wen, T. Spila, J. E. Greene, L. Hultman, and I. Petrov

Acta Materialia 59 (2010) 421-428

 

399.         Thermal Stability and Mechanical Properties of Arc-Evaoprated ZrAlN Thin Films

L. Rogström, L. J.S. Johnson, M.P. Johansson, M. Ahlgren, L. Hultman, and M. Odén

Thin Solid Films 519 (2010) 694-699

 

400.         CrNx films prepared by DC magnetron sputtering and high power pulsed magnetron sputtering: A comparative study

G. Greczynski, J. Jensen, and L. Hultman

IEEE Transactions on Plasma Science 38 (2010) 3046-3056

 

401.         Microstructure control of CrNx films during High Power Impulse Magnetron Sputtering

G. Greczynski, J. Jensen, J. Böhlmark, and L. Hultman

Surf. Coat. Technol. 205 (2010) 118-130

 

402.         Increased electromechanical coupling in w-Sc x Al 1-x N

Gunilla Wingqvist, Ferenc Tasnádi, Agne Zukauskaite, Jens Birch, Hans Arwin, and Lars Hultman

Appl. Phys. Lett. 97   (2010) 112902 1-3

 

403.         Microstructure evolution and age hardening in (Ti,Si)(C,N) thin films deposited by cathodic arc evaporation,

L.J.S. Johnson, L. Rogström, M. P. Johansson, J. Sjölén, M. Odén, L. Hultman

Thin Solid Films 519 (2010) 1397-1403.

 

404.   Growth and structure of ZnO nanorods on a sub-micrometer glass pipette and its application as intracellular potentiometric selective ion sensor

Muhammad H. Asif, Omer Nur, Magnus Willander, Peter Strålfors, Cecilia Brännmark, Fredrik Elinder, Ulrika H. Englund, Jun Lu, and Lars Hultman,

Materials 3 (2010) doi :10.3390/ma30x000x

 

405.         Size dependent carrier recombination in ZnO nanocrystals

Galia Pozina, Lili Yang, Qingxiang Zhao , Lars Hultman, and Pavlos Lagoudakis

Applied Physics Letters 97 (2010) 131909

URL: http://link.aip.org/link/?APL/97/131909

DOI: 10.1063/1.3494535

 

406.         Oxidation of Ti2AlC bulk and spray deposited coatings

Marie Sonestedt, Jenny Frodelius, Mats Sundberg, Lars Hultman, Krystyna Stiller

Corrsoion Science 52 (2010) 3955-3961

 

407.         Protein adsorption on thin films of carbon and carbon nitride monitored with in situ ellipsometry,

T. Berlind, P. Tengvall, L. Hultman, and, H. Arwin

Acta Biomaterialia 7 (2010) 1369-1378 doi:10.1016/j.actbio.2010.10.024

 

408.         Annealing of High-Velocity Oxy-Fuel Sprayed Ti2AlC Coatings

J. Frodelius, E.M. Johansson, J.M. Cordoba-Gallego, M. Odén, P. Eklund, and L. Hultman

Int. J. Appl. Ceram. Technol. 8 (2011) 74-84

 

409.         Intercalation of P atoms in Fullerene-like CPx

Gueorgui K Gueorguiev, Zsolt Czigány, Andrej Furlan, Sven Stafström, Lars Hultman,

Chem. Phys. Lett. 501 (2011) 400-403  

 

410.     W. Metaferia, C. Junesand, F. Olsson, M.Avella, J. Jimenez, G. Pozina, L. Hultman and  S. Lourdudoss

  “Indium Phosphide on Silicon for Photonic Applications”, iNOW2010, 369-370.

411.    C. Junesand, W. Metaferia, F. Olsson, M.Avella, J. Jimenez, G. Pozina, L. Hultman and  S. Lourdudoss, “ Heteroepitaxial  Indium Phosphide on Silicon”, Proce. of SPIE Vol.7719, 77190Q-9,2010.

  http://spie.org/x648.html?product_id=858122

411.   Spectroscopic ellipsometry study on the dielectric function of bulk Ti2AlN, Ti2AlC, Nb2AlC, (Nb0.5Ti0.5)2AlC and Ti3GeC2 MAX phases

A. Mendoza-Galván, M. Rybka, K. Järrendahl, H. Arwin, M. Magnuson, L. Hultman, M. Barsoum

J. Appl. Phys. 109 (2011) 013530--1-8

 

412.         Epitaxially grown graphene based gas sensors for ultrasensitive NO2 detection

R. Pearce, T. Iakimov, M. Andersson, L. Hultman, A. Lloyd Spetz, and R. Yakimova

Accepted. Sensor and Actuators B (2011)

 

413.         Supertoughening in B1 Transition Metal Nitride Alloys by Increased Valence Electron Concentration

D.G.Sangiovanni, L. Hultman, and V. Chirita

Acta Materialia 59 (2011) 2121-2134.

 

414.         Atomic layer deposition of ferromagnetic cobalt doped titanium oxide thin films

V Pore, M Dimri, H Khanduri, R Stern, J Lu, L Hultman, K Kukli, M Ritala, M Leskelä,

Thin Solid Films 519 (2011) 3318-3324.

 

415.         Ti-Si-C-N Thin Films Grown by Reactive Arc Evaporation from Ti 3 SiC 2 Cathodes,

A. Eriksson, J.Zhu, N.Ghafoor, J.Jensen, G.Greczynski, M.P. Johansson J. Sjölén, M. Odén, L. Hultman, J.Rosén

J. Mater. Res. 26 (2011)   xx

 

416.         Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

K. Buchholt, R. Ghandi, M. Domeij and C-M. Zetterling, P. Eklund, J. Lu, L. Hultman and A. Lloyd Spetz

Appl. Phys. Lett. 98 (2011) 042108 .

 

417.   Ti2Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al2O3 (0001) substrates

P.O.Å. Persson, C. Höglund, J. Birch, L. Hultman

Thin Solid Films 519 (2011) 2421-2425

 

418.         Standard-free composition measurements of AlxIn1-xN by low loss EELS

J. Palisaitis, C.-L. Hsiao, M. Junaid, M. Xie, V. Darakchieva, J.-F. Carlin, N. Grandjean , J. Birch, L. Hultman, and P.O.Å. Persson

PSS Rapid Research Letters. 5 (2011) 50-52.

 

419.         Selective Homoepitaxial Growth and Luminescent Properties of ZnO nanopillars

V. Khranovskyy, I. Tsiaoussis, L. Hultman and R. Yakimova,

Nanotechnolog 22 (2011) 185603

 

420.         A unified cluster expansion method applied to the configurational thermodynamics of cubic TiAlN

B. Alling, A. V. Ruban, A. Karimi, L. Hultman, and I. A. Abrikosov

Phys. Rev. B 83 (2011) 104203 [8 pages]

 

421 .       Face-centered cubic (Al1 − xCrx)2O3   

A. Khatibi, J. Palisaitis, C. Höglund, A. Eriksson, P.O.Å. Persson, J. Jensen, J. Birch, P. Eklund, L. Hultman,

Thin Solid Films 519 (2011) Pages 2426-2429

 

422.         Step-Flow Growth of Ti3SiC2 Epitaxial Layers on 4H-SiC(0001)

Kristina Buchholt, Per Eklund, Jens Jensen, Jun Lu, Anita Lloyd-Spetz, and Lars Hultman

Scripta Materialia, In press (2011)

 

423.         Layer Formation by Resputtering in Ti-Si-C hard Coatings during Large-Scale Cathodic Arc Deposition

A. Eriksson, J.Q. Zhu, N. Ghafoor, M.P. Johansson J. Sjölén, J. Jensen, M. Odén, L. Hultman, and J. Rosén,

Subm. Surf. Coat. Technol. 205 (2011) 3923-3930

 

424.   Electronic-Grade GaN(0001)/Al2O3(0001) Grown by Reactive DC-magnetron Sputter Epitaxy using a Liquid Ga Target

M. Junaid, Ching-Lien Hsiao, J. Palisaitis , J. Jensen, P.O.Å. Persson, L. Hultman, and J. Birch

Appl. Phys. Lett. 98 (2011) 141915

 

425.         Phase Evaluation in the Al 2 O 3 Fiber Reinforced Ti 2 AlC During Sintering in 1300-1500 oC Temperature Range

C. B. Spencer, J. Córdoba, N. Obando, A. Sakulich, M. Radovic, M. Odén, L. Hultman, and M. W. Barsoum

J. American Ceramic Soc. Accepted (2011) (JACERS-29292)

 

426.         Fullerene-like CS x : A first-principles study of synthetic growth

C. Goyenola, G.K. Gueorguiev, S. Stafström , L. Hultman,

Chem. Phys. Lett. (2011) In press.

 

427.         Epitaxy of ultrathin NiSi 2 films with predetermined thickness ,

Z. Gao, J. Andersson, T. Kubart, U. Smith, J. Lu, L. Hultman, Z. Zhang, A.J. Kellock, C. Lavoie, and S.-L. Zhang

Electrochemical and Solid State Letters (2011) Accepted.

 

428.   Mitigating the geometrical limitations of conventional sputtering by controlling the ion-to-neutral ratio during HIPIMS

G. Greczynski, J. Jensen and L. Hultman

Thin Solid Films (2011) in press.

 

429.         Structure and mechanical properties of TiAlN-WN a Thin Films.

Thomas Reeswinkel, Davide Giuseppe Sangiovanni, Valeriu Chirita , Lars Hultman and Jochen M. Schneider

Surf. Coat. Technol. 205 (2011) 4821-4827.

 

430.         Structural and mechanical properties of CNx and CPx thin solid films

E. Broitman, A. Furlan, G. Gueorguiev, H. Högberg, Cz. Zsolt, L. Hultman

Key Engineering Materials (accepted 2011)

 

431.         Thermal Stability and Dopant Segregation for Schottky Diodes with Ultrathin Epitaxial NiSi 2-y

J. Luo, X. Gao, Z.-J. Qiu, J. Lu, D. Wu, C. Zhao, J. Li, D. Chen, L. Hultman, and S.-L. Zhang,

IEEE Electron Device Letters in press (2011).

 

432.         High-temperature Stability of α -Ta4AlC3

Nina Lane; Per Eklund; Jun Lu; Charles B Spencer; Lars Hultman; Michel W Barsoum

Materials Research Bulletin 46 (2011) 1088-1091

 

433. Mixing thermodynamics of TM 1−x Gd x N (TM=Ti, Zr, Hf) from first-principles

B. Alling, C. Höglund, R. Hall-Wilton, and L. Hultman ,

Appl. Phys. Lett. L11-03210R in press (2011)

 

 

Books and Book Chapters

4314.       Doctoral Thesis "Growth of Single- and Polycrystalline TiN and ZrN Thin Films by Reactive

          Sputtering;   Influence of Low-Energy Ion Irradiation ",

       (Linköping Studies in Science and Technology, Linköping 1988) Dissertation No. 186.

 

435.   Review of the Mechanical and Thermal Stability of Nitride Coatings

         L. Hultman, M. Odén, L. Karlsson, and J. Birch,                

         Modern Plasma Surface Technology, ed. W. Precht and J. Ignaciuk (Feniks, Koszalin, 1999) p. 33-42

 

436.   Structure/Property Relationships for Hard Coatings, L. Hultman and J.-E. Sundgren,

       in "Hard Coatings for Wear Reduction, Corrosion/Erosion Protection and Biomaterials", ed. by

       R.F.Bunshah (Noyes Publications, Park Ridge , New Jersey ), Ch.6, p.108-180 (2001).

 

437.   Auto-Organized Nanostructures in the Ti-Al-N Thin Film System, Lars Hultman and Anders Hörling, in

      SURFACES AND INTERFACES OF NANOSTRUCTURED MATERIALS Edited by S.M. Mukhopadhyay, S. Seal, N.B. Dahotre and A. Agarwal, The Minerals, Metals & Materials Soc., Warrendale, PA 15086, USA ), 2004

 

438 . Thermal Stability of Advanced Nano-structured Wear-Resistant Coatings,

Lars Hultman and Christian Mitterer

In “Nanostructured Coatings”, ed. A. Cavaleiro and J. Th. M. De Hosson, Plenum Press 2006, Ch 11, pp 464-502

 

439 . Synthesis, Structure, and Properties of Super-Hard Superlattice Coatings,

Lars Hultman

In “Nanostructured Coatings”, ed. A. Cavaleiro and J. Th. M. De Hosson, Plenum Press 2006, Ch. 13, pp. 539-552

 

440.         Book Chapter: Fullerene-like carbon nitride: a new carbon-based tribological coating/ FULLERENE-LIKE CARBON NITRIDE; - A NEW FORM OF DLC SOLID LUBRICANT COATINGS, Esteban Broitman, Jörg Neidhardt, and Lars Hultman, Ch. 23

          In: Tribology of Diamondlike Carbon Films: Fundamentals and Applications ”.

       Ed. Prof. Christophe Donnet and Ali Erdemir Springer (2007)

 

441. Book Chapter: ”Fullerene-like Carbon Nitride – A new Thin Film Material”, J. Neidhardt, E. Broitman, and L. Hultman, in “Wide bandgap materials and new developments”, ed.   Mikael Syväjärvi (Research Signpost) (www.researchsignpost.com) 2006

 

 

Popular Science Publications

*       Upptäckare på en okänd kontinent (Materialvetenskap angående masstransport i keramiska tunna skikt),

          NFR:s årsbok 1998-99 (in Swedish) Swedish Science Press, Uppsala (1999), pp 99-106

 

*        Flygande tefat; -finns de? (Avslöjar hur man med trickfotografering kan fabricera UFO:n),

          Forskning & Framsteg 5 (1978) (In Swedish)

 

*              A New Nanostructured Coumpound Reduces Wear,

       P. Isberg,   T. Liljenberg, L. Hultman, and U. Jansson

                ABB-review, 1 (2004) 64; Published in English, Spanish, German, French


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Last updated: 06/15/11