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Summary of Xuan Thang Trinh's activities


The understanding the point defects (impurities or intrinsic defects such as vacancies, interstitials) play an important role to achieve good n-type, p-type and semi-insulating materials which are technological keys for device applications. Our research focuses on the identification of the configuration of point defects in SiC and III-Nitrides by combination between Electron Paramagnetic Resonance (EPR) experiments and theoretical calculations. The studied samples can be thin films or bulk materials, as-grown samples or electron irradiated/implanted samples in which specific point defects were introduced. The electrical and optical properties of the defects are also studied by temperature dependence of EPR signals, Photo-induced EPR and other electrical methods. 

Selected publications & conference contributions

  • Negative-U carbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon of the negative carbon vacancy at the quasicubic site

    X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, and N. T. Son

    Phys. Rev. B 88, 235209 (2013)
  • Negative-U behavior of the Si donor in Al0.77Ga0.23N
    X. T. Trinh, D. Nilsson, I. G. Ivanov, E. Janzén, A. Kakanakova-Georgieva, and N. T. Son
    Applied Physics Letters 103, 042101 (2013)

  • Negative-U System of Carbon Vacancy in 4H-SiC
    N.T. Son, X.T. Trinh, L. S. Lřvlie, B.G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, and E. Janzén
    Physical Review Letters 109, 187603 (2012)

  • Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
    N. T. Son, X. T. Trinh, A. Gällström, S. Leone, O. Kordina, E. Janzén, K. Szász, V. Ivády, and A. Gali
    Journal of Applied Physics 112, 083711 (2012)

  • Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
    K. Kawahara, X. T. Trinh, N. T. Son, E. Janzén, J. Suda and T. Kimoto
    Applied Physics Letters 102, 112106 (2013)

  • The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
    A. Kakanakova-Georgieva, D. Nilsson, X. T. Trinh, U. Forsberg, N. T. Son, and E. Janzén
    Applied Physics Letters 102, 132113 (2013) 


  • TFFM08 Experimental physics (6 ECTS), lab assistant (Holography, Curie & Ising)
Xuan Thang Trinh

PhD student


E-mail: xuatr@ifm.liu.se
Phone: +46 (0)13 28 26 76

Room P321 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden


Nguyen Tien Sonmain
Erik Janzén, co


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Last updated: 02/11/14