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2017

  • S. Knight, T. Hofmann, C. Bouhafs, N. Armakavicius, P. Kühne, V. Stanishev, I.G. Ivanov, R. Yakimova, S. Wimer, M. Schubert, and V. Darakchieva
    In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene“
    Scientific Reports 7, 5151 (2017)
  • S. Schöche, T. Hofmann, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, P. Kühne, K. Lorenz, M. Schubert, and V. Darakchieva
    “Infrared dielectric functions, phonon modes, and free-charge carrier properties of high- Al-content AlxGa1-xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect“
    J. Appl. Phys., 121, 205701 (2017)
  • C. Bouhafs, A.A. Zakharov, I.G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchieva
    “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC“
    Carbon 116, 722 (2017)
  • N. Armakavicius, C. Bouhafs, V. Stanishev, P. Kühne, R. Yakimova, S. Knight, T. Hofmann,  M. Schubert, and V. Darakchieva
    “Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies“
    Applied Surface Science 421, 357 (2017)

2016

  • C. Bouhafs, V. Stanishev, A. A. Zakharov, T. Hofmann, P. Kühne, T. Iakimov, R. Yakimova, M. Schubert and V. Darakchieva
    “Decoupling and ordering in multilayer graphene on C-face 3C-SiC(111)“
    Appl. Phys. Lett. 109, 203102 (2016)
  • M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q. -T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
    “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic beta-gallium oxide single crystals“
    Phys. Rev. B. 93, 125209 (2016) Editors' suggestion
  • M. Schubert, P. Kühne, V. Darakchieva and T. Hofmann
    “Optical Hall effect - Model description: tutorial“ Invited review
    J. of the Optical Society of America A 33, 1553 (2016)
  • N. Armakavicius, J.-T. Chen, S. Knight, T. Hofmann, P. Kühne, D. Nilsson, U. Forsberg, E. Janzen, and V. Darakchieva
    “Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect“
    phys. stat. sol. c 13, 369 (2016)

2015

  • N. Ben Sedrine, A. Zukauskaite, J. Birch, L. Hultman, S. Schöche, M. Schubert and V. Darakchieva
    “Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 ≤ x ≤ 0.22)“
    J. Phys. D: Appl. Phys. 48, 415102 (2015)
  • S. Khromov, P. O. Å.  Persson, J. Wang, A. Yoshikawa, J. Rosén, E. Janzén and V. Darakchieva
    “Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN“
    Appl. Phys. Lett. 106, 232102 (2015)
  • S. King, S. Schöche, V. Darakchieva, P. Kühne, C. Herzinger, J.-F. Carlin, N. Grandjean, M. Schubert, and T. Hofmann
    “Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies“
    Opt. Lett. 40, 2688 (2015) Selected for Spotlight on Optics
  • C. Bouhafs, V. Darakchieva, I. L. Persson, A. Tiberj, P. O. Å. Persson, M. Paillet, A.-A. Zahab, P. Landois, S. Juillaguet, S. Schöche, M. Schubert and R. Yakimova
    “Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)“
    J. Appl. Phys. 117, 085701 (2015)
  • M. Junige, T. Oddoy, R. Yakimova, V. Darakchieva, C. Weneger, G. Lupina, J. Kitzmann, M. Albert, J. W. Bartha
    “Atomic layer deposition of Al2O3 on NF3-pretreated graphene“
    NANOTECHNOLOGY VII  Book Series: Proceedings of SPIE   Volume: 9519  Article Number: 951915 (2015)

2014

  • M.-Y. Xie, M. Schubert, J. Lu, P. O. Å. Persson, V. Stanishev, C. L. Hsiao, L. C. Chen, W. J. Schaff, and V. Darakchieva
    “Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN”
    Phys. Rev. B 90, 195306 (2014)
  • S. Schoche, T. Hofmann, V. Darakchieva, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi and M. Schubert,
    “Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry ”
    Thin Solid Films 571, 384 (2014)
  • M.-Y. Xie, N. Ben Sedrine, S. Schoche, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi and V. Darakchieva
    “Effect of Mg doping on the structural and free-charge carrier properties of InN”
    J. Appl. Phys. 115, 163504 (2014)
  • M. Junaid, P. Sandström, J. Palisaitis, V. Darakchieva, C. –L. Hsiao, P.O.Å. Persson, L. Hultman and J. Birch
    „Stress Evolution during Growth of GaN (0001)/Al2O3 (0001) by Reactive DC Magnetron Sputter Epitaxy“
    J. Phys. D: Appl. Phys. 47, 145301 (2014)
  • R.Yakimova, T. Iakimov, G.R. Yazdi, C. Bouhafs, A. Zakharov, J. Eriksson, A. Boosalis, M. Schubert and V. Darakchieva
    “Morphological and electronic properties of epitaxial graphene on SiC”
    Physica B 439, 54 (2014)

2013

  • S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva
    “Effective electron mass in AlGaN determined by midinfrared Optical Hall effect”
    Appl. Phys. Lett. 103, 212107 (2013)
  • A. Furlan, G.K. Gueorguiev, Zs. Czigány, V. Darakchieva, S. Braun, M.R. Correia, H. Högberg, L. Hultman
    Structure and properties of phosphorus-carbide thin solid films
    Thin Solid Films 548, 247 (2013)
  • P. Khüne, V. Darakchieva, R. Yakimova, J. D. Tadesco, R.L. Myers-Ward, C.R. Eddy, K. Gaskill, C. M. Herzinger, M. Schubert, and T. Hofmann
    "Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect"
    Phys. Rev. Lett. 111, 077402 (2013)
  • R. Yakimova, G. R. Yazdi, T. Iakimov, J. Eriksson and V. Darakchieva
    "Challenges of Graphene Growth on Silicon Carbide"
    ECS Trans. 53(1), 9-16 (2013)
  • N. Ben Sedrine, A. Zukauskaite, J. Birch, L. Hultman, and V. Darakchieva
    ”Band gap energies and refractive index in YAlN”
    Jpn. J. Appl. Phys. 52, 08JM02 (2013)
  • V. Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, T. Iakimov, R. Vasiliuskas, and R. Yakimova
    "Large-area micro-focal ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C- faces of 3C-SiC(111) "
    Appl. Phys. Lett. 102, 213116 (2013)
  • S. Schöche, T. Hofmann, V. Darakchieva, N. B. Sedrine, X. Wang, A. Yoshikawa, and M. Schubert
    "Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN"
    J. Appl. Phys. 113, 013502 (2013)

2012

  • T. Hofmann, P. Khüne, S, Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva
    "Temperature dependent effective mass in AlGaN/GaN high mobility transistor structures"
    Appl. Phys. Lett. 101, 192102 (2012)
  • M.-Y. Xie, F. Tasnádi, I. A. Abrikosov, L. Hultman and V. Darakchieva
    "Elastic constants, composition and piezoelectric polarization of InAlN: from ab initio structural calculations to experimental implications for the validity of Vegard's rule"
    Phys. Rev. B 86, 155310 (2012)
  • A. Zukauskaite, C. Tholander, J. Palisaitis, P.O.Å. Persson, V. Darakchieva, N. Ben Sedrine, F. Tasnádi, B. Alling, J. Birch, L. Hultman
    "YxAl1-xN Thin Films"
    J. Phys. D: Appl. Phys 45, 422001 (2012)
  • A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova and M. Schubert
    "Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry"
    Appl. Phys. Lett. 101, 011912 (2012)
  • N. Catarino, E. Nogales, N. Franco, V. Darakchieva, S. M. C. Miranda, B. Mendez, E. Alves, J. G. Marques, K. Lorenz
    "Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN"
    Euro Phys. Lett. 97, 68004 (2012)
  • M. Zhou, F. L. Pasquale, P. A. Dowben, A. Boosalis, M. Schubert, V. Darakchieva, R. Yakimova, L. Kong, and J. A. Kelber
    "Direct graphene growth on Co3O4 (111) by molecular beam epitaxy"
    J. Phys.: Condens. Matter. Fast Track Commun. 24, 072201 (2012) IOP Select
  • V. Darakchieva, K. Lorenz, M.-Y. Xie, E. Alves, W. J. Schaff, T. Yamaguchi, Y. Nanishi, S. Ruffenach, M. Moret and O. Briot
    "Unintentional incorporation of hydrogen and related structural and free electron properties of C-plane and A-plane InN"
    Physica Status Solidi A 209, 91 (2012)
  • S. Schöche, T. Hofmann, N. B. Sedrine, V. Darakchieva, B. Monemar, X. Wang, A. Yoshikawa, and M. Schubert
    "Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN"
    Mat. Res. Soc. Symp. Proc. 1396, O07-27 (2012)
  • A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova, Tom Tiwald, M. Schubert, and D. Sekora
    "Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC"
    Mat. Res. Soc. Symp. Proc. 1407, aa20-43 (2012)
2011
  • M. Junaid, D. Lundin,. J. Palisaitis, C. L. Hsiao, V. Darakchieva, J. Jensen, P. O.Å Persson, P. Sandström, W. K. Lai, L. C. Chen, K. H. Chen, U. Helmersson, L. Hultman, and J. Birch
    "Two-domain formation during the epitaxial growth of GaN(0001) on c-plane Al2=3 (0001) by high-power impulse magnetron sputtering"
    J. Appl. Phys. 110, 123519 (2011)
  • V. Darakchieva, K. Lorenz, M.-Y. Xie, E. Alves, C.L. Hsiao, L.C. Chen, L.-W. Tu, W. J. Schaff, T. Yamaguchi and Y. Nanishi
    "Unintentional incorporation of hydrogen in InN films with different surface orientations"
    J. Appl. Phys. 110, 063535 (2011)
  • V. Darakchieva, M.-Y. Xie, D. Rogalla, H.-W. Becker, K. Lorenz, E. Alves, S. Ruffenach, M. Moret and O. Briot
    "Free electron properties and hydrogen in InN grown by MOVPE"
    Physica Status Solidi A 208, 1179 (2011)
  • N. Ben Sedrine, C. Bouhafs, J. C. Harmand, M. Schubert, R. Chtourou, and V. Darakchieva
    "Optical properties of GaAs0.9-xNxSb0.1 alloys studied by spectroscopic ellipsometry"
    Thin Solid Films 519, 2838 (2011)
  • M. Chubarov, H. Pedersen, H. Högberg, V. Darakchieva, J. Jenssen, P.O. Å. Persson and A. Henry
    "Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer"
    Phys. Status Solidi RRL 5, 397 (2011)
  • J. Palisaitis, C. L. Hsiao, M. Junaid, M.-Y. Xie, V. Darakchieva, J.-F. Carlin, N. Grandjean, J. Birch, L. Hultman, P. O.Å Persson
    "Standard-free composition measurements of AlxIn1-xN by low-loss electron energy loss spectroscopy"
    Phys. Status Solidi RRL 5, 50 (2011)
  • K. Lorenz, S.M. Miranda, N. P. Barradas, E. Alves, Y. Nanishi, W.J. Schaff, L. W. Tu and V. Darakchieva
    "Hydrogen in group-III nitrides: An ion beam analysis study"
    AIP Conf. Proceedings, 1336, 310 (2011)
  • N. P. Barradas, K. Lorenz, V. Darakchieva and E. Alves
    "A double scattering analytical model for elastic recoil detection analysis"
    AIP Conf. Proceedings, 1336, 314 (2011)
  • N. Ben Sedrine, V. Darakchieva, D. Lindgren, B. Monemar, S. B. Che, Y. Ishitani, and A. Yoshikawa
    "Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry"
    Phys. Status Solidi C 8, 1629 (2011)
2010
  • N. Ben Sedrine, C. Bouhafs, J. C. Harmand, R. Chtourou, and V. Darakchieva
    "Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the mid-infrared to the ultraviolet"
    Appl. Phys. Lett. 97, 201903 (2010)
  • V. Darakchieva, M.-Y. Xie, N. Franco, F. Giuliani, B. Nunes, E. Alves, C. L. Hsiao, L. C. Chen, T. Yamaguchi, Y. Takagi, K. Kawashima and Y. Nanishi
    "Structural anisotropy of nonpolar and semipolar InN epitaxial layers"
    J. Appl. Phys. 108, 073529 (2010)
  • V. Darakchieva, K. Lorenz, N.P. Barradas, E. Alves, B. Monemar, M. Schubert, N. Franco, C. L. Hsiao, L. C. Chen, W. J. Schaff, L.W. Tu, T. Yamaguchi, and Y. Nanishi
    "Hydrogen in InN: a ubiquitous phenomenon in molecular beam epitaxy grown material"
    Appl. Phys. Lett. 96, 081907 (2010)
  • K. Lorenz, S. Magalhães, N. Franco, N. P. Barradas, V. Darakchieva, E. Alves, S. Pereira, M. R. Correia, F. Munnik, R. W. Martin, K. P. O'Donnell, I. M. Wattson
    "Al1-xInxN/GaN bilayers: structure, morphology and optical properties"
    Physica Status Solidi B 247, 1740 (2010)
2009
  • V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, C. L. Hsiao, T. W. Liu, L. C. Chen, W. J. Schaff, Y. Takagi, and Y. Nanishi
    "Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry"
    Appl. Phys. Lett. 95, 202103 (2009)
  • K. Lorenz, I. Roqan, N. Franco, K. P. O'Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R. Martin, D. As, and M. Panfilova
    "Europium Doping of Zincblende GaN by Ion Implantation"
    J. Appl. Phys. 105, 113507 (2009)
  • V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P.Å.O. Persson, F. Giuliani, E. Alves, H. Lu and W. J. Schaff
    "Free electron behavior in InN: on the role of dislocations and surface electron accumulation"
    Appl. Phys. Lett. 94, 022109 (2009)
  • V. Darakchieva, N. P. Barradas, M.-Y. Xie, K. Lorenz, E. Alves, M. Schubert, P.O.Å. Persson, F. Giuliani, F. Munnik, C. L. Hsiao, L. W. Tu, W. J. Schaff
    "Role of impurities and dislocations for the unintentional n-type conductivity in InN"
    Physica B 404, 4476 (2009)
  • V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, F. Giuliani, M.-Y. Xie, P.Å. O. Persson, B. Monemar, W. J. Schaff, C. -L. Hsiao, L.-C. Chen and Y. Nanishi
    "Unraveling the free electron behavior in InN"
    IEEE COMMAD2008: Optelectr. Microelctron. Mater. Devices, p. 90 (2009)
  • Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar
    "DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate"
    Phys. Status Solidi C 6, S772 (2009)
  • H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva, and E. Janzen
    "Very high epitaxial growth rate of SiC using MTS as chloride-based precursor"
    Matter. Sci. Forum 600-6003, 115 (2009)
2008
  • V. Darakchieva, M.-Y. Xie, F. Tasnádi, I. A. Abrikosov, L. Hultman, B. Monemar, J. Kamimura, and K. Kishino
    "Lattice parameters, deviations from Vegard's rule and E2 phonons in InAlN"
    Appl. Phys. Lett. 93, 261908 (2008)
  • V. Darakchieva, M. Beckers, M.-Y. Xie, L. Hultman, B. Monemar, J.-F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
    "Effects of strain and composition on the lattice parameters and applicability of Vagrad's rule in Al-rich Al1-xInxN films grown on sapphire"
    J. Appl. Phys. 103, 103513 (2008)
  • M. Gonschorek, J. -F. Carlin, E. Feltin, M. Py, N. Grandjean, V. Darakchieva, B. Monemar, M. Lorenz, and G. Ramm
    "Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03?x?0.23)"
    J. Appl. Phys. 103, 093714 (2008)
  • H. Pedersen, S. Leone, A. Henry, V. Darakchieva, P. Carlsson, A. Gällström, and E. Janzen
    "Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)"
    Phys. Status Solid RRL 4, 188 (2008)
  • T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert
    "Optical Hall effect in hexagonal InN"
    J. Electron. Mater. 37, 611 (2008)
  • V. Darakchieva
    "Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy"
    Phys. Status Solidi A 205, 905 (2008)
  • V. Darakchieva, M. Beckers, L. Hultman, M. Xie, B. Monemar, J.-F, Carlin, and N. Grandjean
    "Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule"
    Proc. of the ICNS-7, 7th Int. Conference on Nitride Semiconductors, Las Vegas, USA; Sept 12 -18, 2007; Phys. Status Solidi C 5, 1859 (2008)
  • V. Darakchieva, A. Usui, B. Monemar, M. Saenger, and M. Schubert
    "Lattice parameters of bulk GaN fabricated by halide vapour phase epitaxy"
    J. Cryst. Growth 310, 959 (2008)
2007
  • V. Darakchieva, B. Monemar, and A. Usui
    "On the lattice parameters of GaN"
    Appl. Phys. Lett. 91, 031911 (2007)
  • V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B. A. Haskell, P. T. Fini, S. J. Speck, S. Nakamura
    "Anisotropic strain and phonon deformation potentials in GaN"
    Phys. Rev. B 75, 195217 (2007)
  • H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva, and E. Janzen
    "Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)"
    J. Cryst. Growth 307, 334 (2007)
  • H. Pedersen, S. Leone, A. Henry, V. Darakchieva, and E. Janzen
    "Very high epitaxial growth rate of SiC using MTS as chloride-based precursor"
    Surface and Coatings Technology 201, 8931 (2007)
  • V. Darakchieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, , B. Monemar, D. Hommel, J. Off, B. A. Haskell, P. T. Fini, S. J. Speck, S. Nakamura
    "Effect of anisotropic strain on GaN phonons in c-plane and a-plane GaN layers"
    J. Cryst. Growth 300, 233 (2007)
  • V. Darakchieva, B. Monemar, T. Paskova, S. Einfeldt, D. Hommel, and S. Lourdudoss
    "Phonons in strained AlGaN/GaN superlattices"
    Phys. Status Solidi C 4, 170 (2007)
  • T. Paskova, P. P. Paskov, V. Darakchieva, R. Kroeger, D. Hommel, B. Monemar, S. Lourdudoss, E. Preble, A. Hanser, M. Williams, and M. Tutor
    "Strain-free low-defect density bulk GaN with nonpolar orientations"
    Mater. Res. Soc. Symp. Proc 955E, I3.4 (2007)
2006
  • T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. M. Williams and M. Tutor
    "High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire"
    Appl. Phys. Lett. 89, 051914 (2006)
  • T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, and M. Schubert
    "Effect of high-temperature annealing on the residual strain and bending of free-standing GaN films grown by hydride vapour phase epitaxy"
    Appl. Phys. Lett. 88, 141909 (2006)
  • V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S.Figge, D. Hommel, B. A. Haskell, P. T. Fini, S. Nakamura
    "Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN"
    Phys. Status Solidi B 243, 1594 (2006)
  • T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, T. Suski, M. Bockowski, N. Ashkenov, and M. Schubert
    "Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing"
    Proc. of the 6th International Conference on Nitride Semiconductors; Bremen, Germany; Aug 28 -Sept 2, 2005; Phys. Status Solidi C 3, 1475 (2006)
  • T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert
    "Anisotropy of the ?-point electron effective mass of hexagonal InN"
    Proc. of the 6th International Conference on Nitride Semiconductors; Bremen, Germany; Aug 28 -Sept 2, 2005; Phys. Status Solidi C 3 1854 (2006)
2005
  • V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki
    "Phonon mode behavior in wurtzite AlN/GaN superlattices"
    Phys. Rev. B 71, 115329 (2005)
  • V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert
    "Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates"
    J. Appl. Phys. 97, 013517 (2005)
  • T. Paskova, V. Darakchieva, P. P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmita, and B. Monemar
    "Properties of nonpolar a-plane GaN thick films grown by HVPE with AlN buffers"
    J Crystal Growth 281, 55-61 (2005)
  • T. Paskova, V. Darakchieva, P. P. Paskov, J. Birch, E. Valcheva, P. O. A. Persson, B. Arnaudov, S. Tungasmita, and B. Monemar
    "Nonpolar HVPE-GaN: growth and in-plane anisotropic properties"
    Phys. Status Solidi C 2, 2027-2031 (2005)
  • P. P. Paskov, J. P. Bergman, V. Darakchieva, T. Paskova, B. Monemar, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    "Photoluminescence of GaN/AlN superlattices grown by MOCVD"
    Phys. Status Solidi C 2, 2345-2348 (2005)
  • T. Paskova, T. Suski, M. Bockowski, P. P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel
    "High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress"
    Mater. Res. Soc. Symp. Proc 831, E8.18 (2005)
2004
  • T. Paskova, P. P. Paskov, E. M. Goldys, E. Valcheva, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, S. Hautakangas, K. Saarinen, C. F. Carlström, Q. Wahab, and B. Monemar
    "Characterization of mass-transport grown GaN by hydride vapour phase epitaxy"
    J. Cryst. Growth 273, 118 (2004)
  • V. Darakchieva, J. Birch, M. Schubert, T. Paskova, S. Tungasmita, G. Wagner, A. Kasic, and B. Monemar
    "Strain-related structural and vibrational properties of thin epitaxial AlN layers"
    Phys. Rev. B 70, 045411 (2004)
  • V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, W. J. Schaff
    "Deformation potentials of the E1(TO) and E2 modes of InN"
    Appl. Phys. Lett. 84, 3636 (2004)
  • V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, C. Bundesmann, M. Schubert, H. Lu, W. J. Schaff
    "Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties"
    Superlattices and microstructures 36, 573 (2004)
  • A. Atanassov, M. Baleva, V. Darakchieva, and E. Goranova
    "Grazing incident asymmetric X-ray diffraction of ?-FeSi2 layers produced by ion beam synthesis"
    Vacuum 76, 277 (2004)
  • Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, and B. Monemar
    "Polar and nonpolar GaN grown by HVPE: preferable substrates for nitride-based emitting devices"
    Phys. Status Solidi A 201, 2265 (2004)
  • B. Monemar, P. P. Paskov, H. Haradizadeh, J. P. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P. O. Holtz, G. Pozina , M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    "Optical investigation of AlGaN/GaN quantum wells and superlattices"
    2004; Phys. Status Solidi A 201, 2251 (2004)
  • V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, and I. Akasaki
    "Strain evolution and phonons in AlN/GaN superlattices"
    Mater. Res. Soc. Symp. Proc 798, Y5.60.1 (2004)
  • T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, I.G. Ivanov, B. Monemar, T. Böttcher, C. Ruder, and D. Hommel
    "HVPE-GaN thick films for quasi-substrate applications: strain and wafer bending"
    J. Electronic Materials 33, 389 (2004)
  • T. Paskova, E. Valcheva, V. Darakchieva, P.P. Paskov, B. Arnaudov, B. Monemar, J. Birch, M. Heuken, R.F. Davis, and P. Gibart
    "Growth, separation and properties of HVPE grown GaN by using different nucleation schemes"
    IPAP Conf. Series 4, 14 (2004)
2003
  • T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken
    " In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques"
    J. Cryst. Growth 257, 1 (2003)
  • V. Darakchieva, P. P. Paskov, T. Paskova, E. Valcheva, B. Monemar, and M. Heuken
    "Lattice parameters of GaN layers grown on a-plane sapphire: effect of in-plane anisotropic strain"
    Appl. Phys. Lett. 82, 703 (2003)
  • N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, H. Neumann, V. Darakchieva, H. Arwin, B. Monemar
    "Infrared dielectric functions and phonon modes of high-quality ZnO films"
    J. Appl. Phys. 93, 126 (2003)
  • V. Darakchieva, M. Schubert, J. Birch, S. Tungasmita, T. Paskova, and B. Monemar
    "Generalized infrared ellipsometry study of thin epitaxial AlN films with complex strain behavior"
    Physica B: Condensed matter 340-342 C, 416 (2003)
  • V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
    "Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy"
    Phys. Status Solidi C 0, 2614 (2003)
  • T. Paskova, V. Darakchieva, , E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken
    "Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters"
    Phys. Status Solidi B 240, 318 (2003)
  • V. Darakchieva, P. P. Paskov, T. Paskova,, J. Birch , S. Tungasmita, and B. Monemar
    " E1(TO) mode behavior of strained AlN layers on sapphire"
    Proc. of the 26th International Conference on the Physics of Semiconductors; July 29 - August 2, Edinburgh, 2002, 171, p. D18 (2003)
  • V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Scubert
    "Residual strain in HVPE GaN free-standing and re-grown homoepitaxial films"
    Phys. Status Solidi A 195, 516 (2003)
  • V. Darakchieva, M. Surtchev, E. Goranova, and M. Baleva
    "Effect of the rapid thermal annealing on the structure of ?-FeSi2"
    Vacuum 69, 449 (2003)
  • M. Baleva, E. Goranova, V. Darakchieva, S. Kossionides, M. Kokkosis, and P. Jordanov
    "Influence of grain sizes on the ?-FeSi2 layers conductivity"
    Vacuum 69, 425 (2003)
  • A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner
    Review paper" Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry"
    Phys. Status Solidi C 0, 1750 (2003)
2002
  • B. Monemar , P. P. Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    "Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells"
    MRS Internet J. Nitride Semicond. Res. 7 (2002)
  • V. Darakchieva, P. P. Paskov, T. Paskova,, J. Birch , S. Tungasmita, and B. Monemar
    "Deformation potentials of the E1(TO) mode in AlN"
    Appl. Phys. Lett. 80, 2302 (2002)
  • P. P. Paskov, V. Darakchieva, T. Paskova, P. O. Holtz, and B. Monemar
    "Anisotropy of the in-plane strain in GaN grown on A-plane sapphire"
    Phys. Status Solidi B 234, 892 (2002)
  • T. Paskova, P. P. Paskov, V. Darakchieva, E. M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov, and B. Monemar
    "Free-standing HVPE-GaN quasi-substrates: impurity and strain distributions"
    Phys. Status Solidi C 0, 209 (2002)
  • T. Paskova, V. Darakchieva, P. P. Paskov, U. Södervall, and B. Monemar
    "Growth and separation related properties of HVPE GaN free-standing films"
    J. Cryst. Growth 246, 207 (2002)
  • V. Darakchieva, J. Birch, P. P. Paskov, S. Tungasmita, T. Paskova, and B. Monemar
    "Strain evolution in high temperature AlN for HVPE-GaN growth"
    Phys. Status Solidi A 190, 59 (2002)
2001
  • E. György, I. N. Mihailescu, M. Baleva, E. P. Trifonova, M. Abrashev, V. Darakchieva, A. Zocco, A. Perrone
    "About the possible diminution of the sp3 C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition"
    J. Mat. Sci. 36, 1951 (2001)
  • T. Paskova, P. P. Paskov, E.M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C.F. Carlström, Q. Wahab, and B. Monemar
    "Mass-transport growth and properties of hydride vapour phase epitaxy GaN"
    Phys. Stat. Sol. A 188, 447 (2001)
  • T. Paskova, P. P. Paskov, V. Darakchieva, S. Tungasmita, J. Birch, and B. Monemar
    "Defect Reduction in HVPE Growth of GaN and Related Optical Spectra"
    Phys. Stat. Sol. A 183, 197 (2001)
2000
  • Ch. Angelov, M. Baleva , V. Darakchieva, E. Goranova, and M. Surtchev
    "Infrared vibrational spectra of ?-FeSi2"
    Proc. of the 11th School on Condensed Matter Physics, Varna, Bulgaria, Sept. 2000; Materials for information technology in the new millennium. Marshall J. M., Petrov A. G., Vavrek A., Nesheva D., Dimova-Malinovska D., Maud J. M. (Eds), UK Bookcraft, p.428 (2001)
  • Ch. Angelov, M. Baleva, E. Goranova V. Darakchieva, D. Karpuzov, and M. Surtchev,
    "The optical band gap of the ?-FeSi2 phase",
    Proc. of the 11th School on Condensed Matter Physics, Varna, Bulgaria, Sept. 2000, Materials for information technology in the new millennium. Marshall J. M., Petrov ,A. G., Vavrek A., Nesheva D., Dimova-Malinovska D., Maud J. M. (Eds), UK Bookcraft, p.428 (2001)
  • M. Baleva , V. Darakchieva, E. Goranova, E. P. Trifonova
    "Microhardness characterization of structures obtained by iron-silicon solid-state reaction",
    Mat. Sci. Eng. B 78, 131 (2000)
  • V. Darakchieva, M. Baleva, M. Sutrchev, E. Goranova
    "Structural and optical analysis of ?-FeSi2 thin layers prepared by ion-beam synthesis and solid-state reaction",
    Phys. Rev. B 62, 13 057 (2000)
  • V. Daraktchieva, M. Baleva, E. Goranova, Ch. Angelov
    "Ion beam synthesis of beta-FeSi2",
    Vacuum 58, 415 (2000)
  • V. Daraktchieva, M. Baleva, E. Mateeva and M. Surchev
    "Properties of Si films grown by laser assisted deposition",
    Vacuum 58, 369 (2000)
Books and book chapters
  • V. Darakchieva, T. Paskova and M. Schubert
    " Optical phonons in a-plane GaN under anisotropic strain"
    Book Chapter N9 in "Group-III nitrides with nonpolar surfaces: growth, properties and devices", ed. by T. Paskova, Wiley (Eds.), pp.219-253 (2008)
  • J. Birch, S. Tungasmita and V. Darakchieva
    " Magnetron sputter epitaxy of AlN"
    Book Chapter in "Nitrides as seen by the technology", ed. by T. Paskova and B. Monemar, Research Signpost (Eds), Trivandrum, India, pp.421-456 (2002)

Theses

  • Chamseddine Bouhafs
    "Structural and electronic properties of graphene on 3C- and 4H-SiC ",
    PhD Thesis, ISBN: 978-91-7685-678-9, LiU-tryck, Linköping (2016)
  • Chun-Yi Chen
    "Spectroscopic Ellipsometry Study of Epitaxial Graphene and Effect of Oxygen Treatment ",
    Master Thesis, Linköping (2013)
  • Mengyao Xie
    "Structural and elastic properties of InN and InAlN with different surface orientations and doping",
    PhD Thesis, ISBN:978-91-7519-754-8, LIUTryck, Linköping (2012)
  • Lin-Chin Hung
    "Effect of Mg doping on the structural properties of InN",
    Mater Thesis, Linköping (2012)
  • V. Darakchieva
    "Strain-related structural and vibrational properties of group-III nitride layers and superlattices",
    PhD Thesis, ISBN:91-85295-25-6, UniTryck, Linköping (2004)


Responsible for this page: Vanya Darakchieva
Last updated: 08/24/17