Summary of Robin Karhu's activities
My research is focused of growth and characterization of epitaxial layers of 4H-SiC. SiC is an interesting material for electronic devices due to its wide bandgap, high thermal conductivity and high electron mobility.
The growth is performed using a chemical vapor deposition (CVD) reactor. I have mainly been focused on studying growth using chlorinated precursor gases. Chlorinated precursors have shown to greatly improve the growth rate of epitaxial SiC layers. The characterization is mainly focused on analyzing the surface morphology, structural defects and electrical properties. This involves techniques such as optical microscopy, atomic force microscopy and various techniques for measuring electronic properties.
- TFYA67 Modern Physics (6 ECTS) , teaching assistant
Responsible for this page: Fredrik Karlsson
Last updated: 06/19/14