Summary of Pontus Stenberg's activities
ResearchSilicon carbide (SiC) is a semiconductor with physical properties that are appealing for some electrical devices. Some of the appealing properties can be further improved if only one isotope of silicon (Si) and carbon (C) is used. My research is in chloride based chemical vapor deposition (CVD) growth of isotope enriched SiC. CVD is a growth technique in which gases are let in to a growth chamber where chemical reactions take place in the gas phase and at the surface to form a material. The gases that form the SiC material contain Si (i.e. SiH4, SiCl4) and C (i.e. CH4, C2H4, C3H8). Chlorine (Cl) can be added to enhance reactions that form SiC. Usually this is done by adding the gas HCl to the process. All these gases are diluted and transported in hydrogen in to the growth chamber. The growth chamber is heated to ~1600C. In the right concentrations and flows at the right temperature a nice SiC film will form.
- TFYA75 Applied Physics - Bachelor Project (16 ECTS), supervisor
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Last updated: 02/11/14