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Journal Articles and Conference Contributions.

Recent publications have tumbnails which are "clickable" for image of first page, and when applicable to LiU electronic publishing or DOI reference.. 

2104

 

Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Monemar, P.P. Paskov, G. Pozina, C. Hemmingsson, J.P. Bergman, S. Khromov, V.N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya and I. Akasaki

J. Appl. Phys. 115 , 053507 (2014)

Link to original: http://dx.doi.org/10.1063/1.4862928

Diva Link :      http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-105582

Fast growth rate epitaxy on 4º off-cut 4-inch diameter 4H-SiC wafers

J. Hassan, H. Bae, L. Lilja, I. Farkasd, I. Kim, P. Stenberg, J. Sun, O. Kordina, J.P. Bergmani, S. Haj and E. Janzén

Int. Conf. SiC and Related Materials, Miyazaki Japan, 2013

Materials Science Forum, vol. 778-780, pp. 179-182 (2014)

Link to journal:

Diva link:       

Improved Epilayer Surface Morphology on 2˚ off-cut 4H-SiC Substrates

Louise Lilja, Jawad ul Hassan, Erik Janzén and Peder Bergman

Int. Conf. SiC and Related Materials, Miyazaki Japan, 2013

Materials Science Forum, vol. 778-780, pp. 206-209 (2014)

Link to journal:

Diva link:        

Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS

I. D. Booker, H. Abdalla, L. Lilja, J. Hassan, J. P. Bergman, E. Ö. Sveinbjörnsson, E. Janzén

Int. Conf. SiC and Related Materials, Miyazaki Japan, 2013

Materials Science Forum, vol. 778-780, pp. 281-284 (2014)

Link to journal:

Diva link:         

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminescence and μ -PCD

Birgit Kallinger,  Mathias Rommel, Louise Lilja, Jawad ul Hassan, Ian Booker, Erik Janzén and Peder Bergman

Int. Conf. SiC and Related Materials, Miyazaki Japan, 2013

Materials Science Forum, vol. 778-780, pp. 301-304 (2014)

Link to journal:

Diva link:         

Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC

Arash Salemi, Benedetto Buono, Anders Hallén, Jawad Ul Hassan, Peder Bergman, Carl Mikael Zetterling, Mikael Östling

Int. Conf. SiC and Related Materials, Miyazaki Japan, 2013

Materials Science Forum, vol. 778-780, pp. 836-840 (2014)

Link to journal:

Diva link:         

2013

The influence of growth conditions on carrier lifetime in 4H–SiC epilayers

Louise Lilja, Ian D. Booker, Jawad ul Hassan, Erik Janzén, J. Peder Bergman

Journal of Crystal Growth, vol 381,  pp 43–50 (2013)

Link to journal:  http://dx.doi.org/10.1016/j.jcrysgro.2013.06.037

Diva Link:         http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98658

Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells

A.a. Toropov, E.A. Shevchenko, V.N. Jmerik, D.V Nechaev, M.A. Yagovkina,   A.A Sitnikova, S.V. Ivanov, G. Pozina, J.P. Bergman, B. Monemar.

J. Appl. Physics, vol 114, Art. Number 124306 (2013)

Link to journal: 10.1063/1.4822155

Diva Link:    http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100494

Luminescence of Acceptors in Mg-Doped GaN

B. Monemar, S. Khromov, G. Pozina, P. Paskov, P. Bergman, C. Hemmingsson, L. Hultman, H. Amano, V. Avrutin, X. Li, H. Morcoc

Japn. J. Appl. Physics, vol 52, Art Nr: UNSP 08JJ03 (2013)

Link to journal: 10.7567/JJAP.52.08JJ03

Diva Link:      http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98151

On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications

J. Hassan, I.D. Booker, L. Lilja, A. Hallen, M. Fagerlind, P. Bergman, E. Janzen

European Conf. SiC and Related Materials, St. Petersburg, 2012

Materials Science Forum, vol. 740-742, pp. 173-176 (2013)

Link to journal: 10.4028/www.scientific.net/MSF.740-742.173

Diva link:      http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91406 

Influence of growth temperature on carrier lifetime in 4H-SiC epilayers

L. Lilja, J. Hassan, I.D. Booker, P. Bergman, E. Janzen

European Conf. SiC and Related Materials, St. Petersburg, 2012

Materials Science Forum, vol. 740-742, pp. 637-640 (2013)

Link to journal: 10.4028/www.scientific.net/MSF.740-742.637

Diva link          : http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-88341

2012

Influence of large-aspect-ratio surface roughness on electrical characteristics of AlGaN/AlN/GaN HFETs

M. Fagerlind,   I. Booker, P. Bergman, E. Janzen, H. Zirath, N. Rorsman

IEEE Transactions on Device and Materials Reliability Vol. 12, pp. 538-546 (2012)

Link to journal: 10.1109/TDMR.2012.2188403

Diva link:         http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84345

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

J.W. Sun, V. Khranovskyy,M.   Mexis, M. Eriksson, M. Syväjärvi, I. Tsiaoussis, G.R. Yazdi, H. Peyre, S. Juillaguet, J. Camassel, P.O. Holtz, P. Bergman, L. Hultman, R. Yakimova

J. of Luminescence, vol. 132, pp. 122-127, (2012)

Link to journal: 10.1016/j.jlumin.2011.08.015

Diva link:         http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73577

Nanoscale light-harvesting metal-organic frameworks

X. Zhang, X., M.A. Ballem, Z.-J. Hu, P. Bergman, K. Uvdal

Angewandte Chemie – International Edition. Vol 50, Issue 25, pg 5729-5733 (2012)

Link to journal: 10.1002/anie.201007277

Diva link:          http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69935

Excitonic parameters of GaN studied by time-of-flight spectroscopy

T.V. Shubina, A.A. Toropov, G. Pozina, J.P. Bergman,   M.M. Glazov, N.A. Gippius, P. Disseix, J. Leymarie, B. Gil, B. Monemar.

Appl.Phys.Lett. v99, 101108 (2012)

Link to journal: 10.1063/1.3625431

Diva link:      http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71101   

Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers

I.D. Booker, J. Hassan, A. Hallen, E.Ö. Sveinbjörnsson, O. Kordina, J.P. Bergman

Int. Conf. SiC and Related Materials, Cleveland, 2011

Materials Science Forum, vol. 717-720, pp. 285-288 (2012)

Link to journal: 10.4028/www.scientific.net/MSF.717-720.285

DIVA link:       http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87573  

Radial variation of measured carrier lifetimes in epitaxial layers grown with wafer rotation

J.P. Bergman, I.D. Booker, L. Lilja, J. Hassan, E. Janzen

Int. Conf. SiC and Related Materials, Cleveland, 2011

Materials Science Forum, vol. 717-720, pp. 289-292 (2012)

Link to journal: 10.4028/www.scientific.net/MSF.717-720.289

DIVA link:         http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87574

Influence of growth mechanism on carrier lifetime in on-axis homoepitaxial layers of 4H-SiC

J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzen

Int. Conf. SiC and Related Materials, Cleveland, 2011

Materials Science Forum, vol. 717-720, pp. 157-160 (2012)

Link to journal:  10.4028/www.scientific.net/MSF.717-720.157

DIVA link:     http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87567

High-resolution time-resolved carrier lifetime and photoluminescence mapping of 4H-SiC epilayers

I.D. Booker,   J. Hassan, E. Janzen, J.P. Bergman,

Int. Conf. SiC and Related Materials, Cleveland, 2011

Materials Science Forum, vol. 717-720, pp. 293-296 (2012)

Link to journal: 10.4028/www.scientific.net/MSF.717-720.293

DIVA link:        http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87575

The effect of growth conditions on carrier lifetime in n-type 4H-SiC epitaxial layers

L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzen

Int. Conf. SiC and Related Materials, Cleveland, 2011

Materials Science Forum, vol. 717-720, pp. 161-164 (2012)

Link to journal: 10.4028/www.scientific.net/MSF.717-720.161

DIVA link:         http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-88452

2011

Delay and distortion of slow light pulses by excitons in ZnO

T.V. Shubina, M.M. Glazov, N.A. Gippius, A.A. Toropov, D. Lagarde, , P. Disseix, J. Leymarie,B. Gil,   G. Pozina, J.P. Bergman, B. Monemar.

Phys.Rev.B. v84 075202 (2011)

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

B. Monemar, P. Paskov, G. Pozina, C. Hemmingsson, P. Bergman, D. Lindgren, L. Samuelsson, X. Ni, H. Morkoc, T. Paskova, Z. Bi, J. Ohlsson

Proceedings of SPIE - The International Society for Optical Engineering, vol 7939, Art. Nr. 793907 (2011)

Optimization of SiC MESFET for high power and high frequency applications

N. Ejebjörk, H. Zirath, P. Bergman, B. Magnusson, N. Rorsman.

European Conf. SiC and Related Materials, Oslo, 2010

Materials Science Forum 679-680, pp 629-632 (2011)

Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

P. Scajev, J. Hassan, L. Jaeasiunas, M. Kato, A. Henry, J.P. Bergman

J. Electronic Materials v40, p394 (2011)

High growth rate with reduced surface roughness during on-axis homoepitaxial growth of 4H-SiC

J. Hassan, J.P. Bergman, A. Henry, E. Janzen,

European Conf. SiC and Related Materials, Oslo, 2010

Materials Science Forum vol. 679-680, pp.115-118 (2011)

Optically detected temperature dependences of carrier lifetime and diffusion coefficient in 4H-and 3C-SiC

J. Hassan, P. Scajev, K. Jarasiunas, J.P. Bergman

European Conf. SiC and Related Materials, Oslo, 2010

Materials Science Forum vol. 679-680, pp.205-208 (2011)

Mg-related acceptors in GaN

B. Monemar, P.P. Paskov, G. Pozina, C. Hemmingson, J.P. Bergman, H. Amano, I.Akasaki, S. Figge, D. Hommel, T. Paskova, A. Usui

Phys. Stat. Solidi C, vol7, No. 7-8

2010

 

Delay and distortion of slow light pulses by excitons in ZnO

T.V. Shubina, M.M. Glazov, N.A. Gippius, A.A. Toropov, D. Lagarde, , P. Disseix, J. Leymarie,B. Gil,   G. Pozina, J.P. Bergman, B. Monemar.

Phys.Rev.B. v84 075202 (2011)

Link to journal:

DIVA link:

Transient photoluminescence of shallow donor bound excitons in GaN

  Monemar, B. Paskov, P.P., Bergman, J.P; Pozina, G; Toropov, A.A,; Shubina, T.V; Malinauskas, T.; Usui, A.

Phys. Rev. B., v82, p235202 (2010)

Link to journal:

DIVA link:

Characterization of the carrot defect in 4H-SiC epitaxial layers .

J Hassan, A Henry, P.J. Mcnally, and J.P. Bergman

Journal of Crystal Growth, 312 (11), pp. 1828-1837

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=7&pid=diva2:325536

Nanoscale Ln(III)-Carboxylate coordination polymers (Ln = Gd, Eu, Yb):

Temperature-controlled guest encapsulation and light harvesting.

Xuanjun Zhang, Mohamed Ali Ballem, Maria Ahren, Anke Suska, Peder Bergman and Kajsa Uvdal.

J. Am. Chem. Soc., 2010 , 132 (30), pp 10391–10397

Mg-related acceptors in GaN

B. Monemar, P.P. Paskov, G. Pozina, C. Hemmingson, J.P. Bergman, H. Amano, I.Akasaki, S. Figge, D. Hommel, T. Paskova, A. Usui

Phys. Stat. Solidi C, vol7, No. 7-8

Growth and Properties of SiC on-axis Homoepitaxial Layers

J. Hassan, J.P. Bergman, J. Palisaites, A. henry, P.J. McNally, S. Andersson and E. Janzen

Int.Conf. SiC and Related Materials, Nurnberg, 2009

Materials Science Forum vol. 645-648, pp.83-88 (2010)

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=7&pid=diva2:338126

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Optical and Structural Properties of in-grown Stacking Faults in 4H-SiC Epilayers.

J. Hassan, A. Henry and J.P. Bergman

Int.Conf. of SiC and Related Materials, Nurnberg, Germany 2010

Materials Science Forum vol. 645-648, pp.307-310 (2010)

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=7&pid=diva2:338109

Original Publication : http://www.scientific.net/MSF.645-648.307

Single Shockley Faults in as-grown 4H-SiC Epilayers

J. Hassan and   J.P. Bergman

Int. Conf. of SiC and Related Materials, Nurnberg, Germany 2010

Materials Science Forum vol. 645-648, pp.327- 330 (2010)

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=7&pid=diva2:338108

2009

 

Evidence for two Mg related acceptors in GaN

Monemar, B., Paskov, P.P.,   Pozina, G.,   Hemmingsson, C.; Bergman, J.P.; Kawashima, T.;

Amano, H.; Akasaki, I.; Paskova, T.; Figge, S.; Hommel, D.; Usui, A.

Physical Review Letters , v 102, n 23, (2009)

Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers:

Optical lifetime mapping

Hassan, J. and     Bergman, J.P.

Journal of Applied Physics , v 105, n 12, p 123518 (2009)

In-grown stacking faults in 4H-SiC epilayers grown on off-cut substrates
Hassan, J. , Henry, A.; Ivanov, I.G.; Bergman, J.P.

Journal of Applied Physics , v 105, n 12, p 123513   (2009). 

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
Brosselard, P., Pérez-Tomás, A.,   Hassan, J., Camara, N.; Jordà, X.; Vellvehí, M.; Godignon, P.; Milln, J.; Bergman, J.P.

Semiconductor Science and Technology , v 24, n 9, (2009)

IOP Publishing : http://dx.doi.org/10.1088/0268-1242/24/9/095004

Titanium related luminescence in SiC
Henry, A.
, Bergman, J.P.; Janzen, E.

Int. Conf. on SiC and Related Materials, Otsu Japan, 2007.

Materials Science Forum , v 600-603, pt.1, p 461-4, (2009)

Optical properties of metastable Shallow Acceptors in Mg-Doped GaN layers grown by Metal-Organic Vapor Phase Epitaxy

G. Pozina, C. Hemmingsson, J.P. Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui, and B. Monemar.

29th Int. Conference on the Physics of Semiconductors

AIP Con..

3.3 kV-10A 4H-SiC PiN diodes

Brosselard, P., Camara, N. , ul-Hassan, Jawad , Jorda, X. , Bergman, J.P, Montserrat, J., Millan , J.

European Conf. on SiC and Related Materials, Barcelona, 2008

Materials Science Forum, vol. 600-603, pg. 991-994. (2009)

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=1&pid=diva2:221773

Two Dimensional X-ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates

Justinas Palisaitis, Peder Bergman, Per Persson.
European Conf. on SiC and Related Materials, Barcelona, 2008
Materials Science Forum Vols. 615-617 pg. 275-278, (2009)

Influence of Structural defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping

Jawad ul-Hassan and Peder Bergman.

European Conf. on SiC and Related Materials, Barcelona, 2008

Materials Science Forum Vols. 615-617, pg.255-258. (2009)

LiU Electronic Press : http://liu.diva-portal.org/smash/record.jsf?searchId=1&pid=diva2:264390

On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications

Jawad ul-Hassan,  Peder Bergman, Anne Henry, Pierre Brosselard, Philippe Godignon, Erik Janzén.
 
European Conf. on SiC and Related Materials, Barcelona, 2008
Materials Science Forum Vols. 615-617, pg. 133-136. (2009).

2008

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Resonant Light Delay in GaN with Ballistic and Diffusive Propagation

T.V. Shubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, J.P. Bergman, G. Pozina, B. Monemar.

Phys. Rev. Lett. 100, 087402 (2008)  Link  PDF¶

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

P. Klason, T. Moe Borseth, Q.X. Zhao, B.G. Svensson, A.Yu. Kuznetsov, J.P. Bergman, M. Willander;

Solid State Communications, v 145, p 321-6 (2008)

 
On-axis homoepitaxial growth on Si-face 4H-SiC substrates
J. Hassan, J.P. Bergman, A. Henry, J. Janzen,
J. of Crystal Growth , v 310, n 20, p 4424-9, (2008)
 
Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
A.A. Toropov, Yu.E. Kitaev, T.V. Shubina, P.P. Paskov, J.P. Bergman, B. Monemar, A. Usui, A.
Phys. Rev. B. , v 77, n 19, p 195201-1-6 (2008)
 
In-situ surface preparation of nominally on-axis 4H-SiC substrates
Hassan, J.; Bergman, J.P.; Henry, A.; Janzen, E.
Journal of Crystal Growth , v 310, n 20, p 4430-7, 1 Oct. (2008)
 
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
Pozina, G.; Hemmingsson, C.; Paskov, P.P.; Bergman, J.P.; Monemar, B.; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.
Applied Physics Letters , v 92, n 15, p 151904-1-3, 14 April (2008)
 
 Dislocations at the interface between sapphire and GaN
A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Säynätjoki, T. O. Tuomi, P. J. McNally, M. Odnoblyudov, V. Bougrov, A. N. Danilewsky, P. Bergman and R. Simon
J. of Materials Science: Materials in Electronics, v19, pg.143-148 (2008)
 

On-axis homoepitaxial growth on Si-face 4H-SiC substrates.

J. Hassan, J.P. Bergman, A. Henry, J. Janzen,

J. of Crystal Growth , v 310, n 20, p 4424-9, (2008)

Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN

A.A. Toropov, Yu.E. Kitaev, T.V. Shubina, P.P. Paskov, J.P. Bergman, B. Monemar, A. Usui, A.

Phys. Rev. B. , v 77, n 19, p 195201-1-6 (2008)

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Hassan, J.; Bergman, J.P.; Henry, A.; Janzen, E.

Journal of Crystal Growth , v 310, n 20, p 4430-7, 1 Oct. (2008)

2007

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Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

Pozina, G., C. Hemmingsson, J.P. Bergman, D. Trinh, L. Hultman, B. Monemar;

Appl. Phys. Lett., v 90, n 22, p 221904/1-3 (2007). 

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Mechanism for radiative recombination in ZnCdO alloys

I.A. Buyanova, J.P. Bergman, G. Pozina, W.M. Chen, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong;

Appl. Phys. Lett., v 90, n 26,, p 261907/1-3 (2007).

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Evaluation of optical quality and defect properties of GaN<sub>x</sub>P<sub>1-x</sub> alloys lattice matched to Si

M. Izadifard, J.P. Bergman, I. Vorona, W.M. Chen, I.A. Buyanova, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu;

Appl. Phys. Lett., v 85, n 26, p 6347-9 (2007).

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Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures

B. Monemar, P.P. Paskov, J.P. Bergman; S. Keller,S.P. DenBaars , U.K. Mishra;.

Physica Status Solidi A, v 204, n 1, p 304-8 (2007).

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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

P. Brosselard, X. Jorda, M. Vellvehi, P. Godignon, J.P. Bergman, B. Lambert;

[Conf Proc.] 19th Intern. Symp. on Power Semiconductor Devices, p 285-8, (2007).

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4H-SiC epitaxial layers grown on on-axis Si-face substrate

J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen;

[Proc. ECSCRM'06]. Materials Science Forum, v 556-557, p 53-6 (2007)

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Thick epilayer for power devices

A. Henry, J. Hassan, H. Pedersen, F. Beyer, J.P. Bergman, S. Andersson, E. Janzen, P.Godignon;

[Proc. ECSCRM'06]. Materials Science Forum, v 556-557, p 47-52 (2007).

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Growth and photoluminescence study of aluminium doped SiC epitaxial layers

H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen;

[Proc. ECSCRM'06]. Materials Science Forum, v 556-557, p 97-100 (2007).

2006

Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures

A.A. Toropov, I.V. Sedova, O.G. Lyublinskaya, S.V. Sorokin, A.A. Sitnikova, S.V. Ivanov, J.P. Bergman, M. Monemar, F. Donatini, L.S. Dang;

Applied Physics Letters, v 89, n 12, p 123110-1-3 (2006)

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Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells

A.A. Toropov, Ya.V. Terent'ev, S.V. Sorokin, S.V. Ivanov, T. Koyama, K. Nishibayashi, A. Murayama, Y. Oka, J.P. Bergman, I.A. Buyanova, W.M. Chen, B. Monemar;

Physical Review B, v 73, n 24, p 245335-1-9 (2006).

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Radiative recombination of GaInNP alloys lattice matched to GaAs

M. Izadifard, J.P. Bergman, W.M. Chen, I.A. Buyanova, Y.G. Hong, C.W. Tu;

Applied Physics Letters, v 88, n 1, p 11919-1-3 (2006).

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I.G. Ivanov, J.P. Bergman, B. Monemar, T. Onuma, S.F. Chichibu;

Journal of Applied Physics, v 99, n 9, p 93108-1-4 (2006).

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Photoluminescence upconversion in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy

M. Izadifard, J.P. Bergman, W.M. Chen, I.A. Buyanova, Y.G. Hong, C.W. Tu;

Journal of Applied Physics, v 99, n 7, p 73515-1-5 (2006).

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Properties of thick n- and p-type epitaxial layers of 4H-SiC grown by hot-wall CVD on off- and on-axis substrates

Jawad-ul-Hassan Hallin, C.;J.P. Bergman; E. Janzen,

[Proc. ICSCRM05]. Materials Science Forum, v 527-529, p 183-6 (2006).

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Techniques for minimizing the basal plane dislocation density in SiC epilayers to reduce Vf drift in SiC bipolar power devices

Sumakeris, J.J.J.P. Bergman; Das, M.K.; C. Hallin, Hull, B.A.; E. Janzen, Lendenmann, H.; O'Loughlin, M.J.; Paisley, M.J.; Ha, S.; Skowronski, M.; Palmour, J.W.; Carter, C.H., Jr.

[Proc. ICSCRM05]. Materials Science Forum, v 527-529, p 141-6 (2006)

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Investigation of the electronic structure of the UD-4 defect in 4H-SiC by optical techniques

Thuaire, A.; A. Henry, Magnusson, B.;J.P. Bergman; W.m. Chen,   Janzen, M.; Mermoux, E.; Bano, E.

[Proc. ICSCRM05]. Materials Science Forum, v 527-529, pt.1, p 461-4 (2006).

x

Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers

Paskov, P.P. Schifano, R.; T. Malinauskas, Paskova, T.;J.P. Bergman; B. Monemar, Figge, S.; Hommel, D.; Haskell, B.A.; Fini, P.T.; Speck, J.S.; Nakamura, S.

Physica Status Solidi C, n 6, p 1499-502 (2006).

x

Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

Hassan, J. Henry, A.;J.P. Bergman; Jensen, E.

Thin Solid Films, v 515, n 2, p 460-3 (2006).

x

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

B. Monemar, P.P. Paskov, J.P. Bergman; T. Malinauskas, K. Jarasiunas, A.A. Toropov, T.V. Shubina, Usui, A.

[MRS Fall Meeting 05]. Materials Research Society Symposium Proceedings Vol.892, p 479-84 (2006).

x

The dominant shallow 0.225 eV acceptor in GaN

B. Monemar, P.P. Paskov, J.P. Bergman; T. Paskova, Figge, S.; Dennemarck, J.; Hommel, D.

Physica Status Solidi B, v 243, n 7, p 1604-8 (2006).

x

Synthesis and characterization of ZnO nanostructures grown on Si substrates

Zhao, Q.X.; Klason, P.; Willander, M.; Bergman, P.J.; Jiang, W.L.; Yang, J.H.

Physica Scripta, v 2006, n T126, p 131-4 (2006).

x

III-V/II-VI heterovalent double quantum wells

A.A. Toropov, Sedova, I.V.; Sorokin, S.V.; Terent'ev, Ya.V.; Ivchenko, E.L.; Lykov, D.N.; Ivanov, S.V.;J.P. Bergman; Monemar, B.

Physica Status Solidi B, v 243, n 4, p 819-26 (2006).

x

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Neimontas, K.; T. Malinauskas, Aleksiejunas, R.; Sudzius, M.; K. Jarasiunas, Storasta, L.;J.P. Bergman; E. Janzen,

Semiconductor Science and Technology, v 21, n 7, p 952-8 (2006).

x

Structural defect-related emissions in nonpolar a-plane GaN

P.P. Paskov,   Schifano, R.; T. Paskova, Malinauskas, T.;J.P. Bergman; B. Monemar, Figge, S.; Hommel, D.

Physica B, v 376-377, p 473-6 (2006).

x

A hydrogen-related shallow donor in GaN?

Monemar, B. P.P. Paskov, J.P. Bergman; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

Physica B, v 376-377, p 460-3 (2006).[]

x

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Monemar, B. P.P. Paskov, J.P. Bergman; T. Paskova, C. Hemmingsson, T. Malinauskas, K. Jarasiunas, P. Gibart, B. Beaumont;

Physica B, v 376-377, p 482-5 (2006).[]


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