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Posters

Below are some recent Poster Presentations of our research results.

Some images are or will be linked to pdf files of the poster. 

ICSCRM 2013

International Conference on SiC and Related Materials, Miyazaki, Japan, Oct. 2013

 

ECSCRM 2012

European Conference on SiC and related Materials, St. Petersburg, Russia, Sept 2012

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Louise Lilja, Jawad ul Hassan, Ian Booker, Peder Bergman and Erik Janzén

ISCRM2011

International Conference of Silicon Carbide, Cleveland, US, Sept. 2011

The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers

Louise Carlsson, Jawad ul Hassan, Ian Booker, Peder Bergman and Erik Janzén

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation.

I.D. Booker, L.E. Carlsson, J. Hassan, E. Janzén and J.P. Bergman

ECSRM 2010

European Conference on SiC, Oslo, Norway, Sept. 2010

Optically detected temperature dependent carrier lifetime and diffusion in SiC

Jawad ul Hassan, Patrik Scajev , Kestutis Jarasiunas and Peder Bergman 2

High growth rate with reduced surface roughness on-axis homoepitaxial growth of 4H - SiC

Jawa-ul-Hassan, Peder Bergman, Anne Henry, Erik Janzén

ICSCRM 2009

International Conference on SiC and Related Materials, Nurnberg, Germany Oct. 2009.

Optical and Structural Properties of In-grown Stacking Faults in 4H SiC

Jawad-ul-Hassan, A. Henry and J.P. Bergman

ECSCRM 2008

European Conference on SiC and Related Materials Barcelona 8-11 Sept. 2008

Influence of Structural Defects on Carrier Lifetime in 4H Epiaxial Layers Studied by High Resolution Optical Lifetme Mapping.

Jawad-ul-Hassan and J.P. Bergman

Two dimensionell x-ray diffraction mapping of basal plane orientation on SiC substrates.

J. Palisaitis, J.P. Bergman and P.O.Å. Persson  

ICSCRM2007

International Conference on SiC and Related Materials, Otsu Japan Oct. 2007.

Characterisation of Epitaxial Defect in 4H SiC

Invited Poster

Jawad-ul-Hassan, J.P. Bergman, A. Henry, P. McNally, E. Janzén 

ECSCRM2006

European Conference on SiC and Related Materials, Newcastle UK Sept. 2006.

4H-SiC Epitaxial Layares Grown on on-axis Si-face substrates.

Jawad-ul-Hassan, J.P. Bergman, A. Henry, H. Pedersen,  P. McNally, E. Janzén 

Older poster will be added in due time...


Responsible for this page: Fredrik Karlsson
Last updated: 09/25/13