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Publications

2011

High growth rate with reduced surface roughness during on-axis homoepitaxial growth of 4H-SiC
J. Hassan, J.P. Bergman, A. Henry and E. Janzén, Materials Science Forum 679-680 (2011) 115-118.

Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates
P. Scajev, J. Hassan, K. Jarasiunas, M. Kato A. Henry, and J.P. Bergman, Journal of Electronic Materials  40(4) (2011) 394-399.

Optically detected temperature dependences of carrier lifetime and diffusion coefficient in 4H- and 3C-SiC
J. Hassan, P. Ščajev, K. Jarašiūnas and J.P. Bergman, Materials Science Forum 679-680 (2011) 205-208.

2010

Characterization of the carrot defect in 4H-SiC epitaxial layers
J. Hassan, P.J. McNally, A. Henry and J.P. Bergman, Journal of Crystal Growth 312 (2010) 1828.

Growth and properties of SiC on-axis homoepitaxial layers
J. Hassan, J. P. Bergman, J. Palisaitis, A. Henry, P.J. McNally, S. Anderson and E. Janzén, Materials Science Forum 645-648 (2010) 83.

Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
J. Hassan, A. Henry and J.P. Bergman, Materials Science Forum 645-648 (2010) 307.

Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
J. Hassan and J.P. Bergman, Materials Science Forum 645-648 (2010) 327.


2009

In-grown stacking faults in 4H-SiC epilayers grown on off-cut substrates
J. Hassan, A. Henry , I. G. Ivanov and J.P. Bergman, J. Appl. Phys. 105 (2009) 123513.

Influence of structural defects on carrier lifetime in 4H-SiC epitaxial l layers: Optical lifetime mapping
J. Hassan, and J.P. Bergman, J. Appl. Phys. 105 (2009) 123518.

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
H. Pedersen, F. C. Beyer, J. Hassan, A. Henry and E. Janzén, J. Crystal Growth 311 (2009) 1321.

Low loss, large area 4.5 kV 4H-SiC PiN diodes with reduced forward voltage drift
P. Brosselard, A. Pérez-Tomás, J. Hassan, N. Camara, X. Jordà, M. Vellvehí, P. Godignon, J. Millán and J.P. Bergman, Semi. Cond. Sci. Tech. 24 (2009) 095004 .

On-axis homoepitaxy on full 2” wafer for high power applications
J. Hassan, J.P. Bergman, A. Henry and E. Janzén, Materials Science Forum 615-617 (2009) 133.

Influence of structural defects on carrier lifetime in 4H epitaxial Layers, studied by high resolution optical lifetime mapping
J. Hassan, and J.P. Bergman, Materials Science Forum, 615-617 (2009) 255 .

Temperature dependence and selective excitation of the phosphorus related photoluminescence in 4H-SiC
I.G. Ivanov, J. Hassan, A. Henry and E. Janzén, Materials Science Forum, 615-617 (2009) 263 .
ECSCRM 2008, Barcelona, Spain.

Measurement of carrier lifetime temperature dependence in 3.3kV 4H-SiC PiN diode using MOCVD technique
N. Dheilly , D. Planson, P. Brosselard, J. Hassan, P. Bevilacqua, D. Tournier, C. Raynaud and H. Morel, Materials Science Forum, 615-617 (2009) 703.

3.3kV 4H-SiC PiN diode using MOCVD technique
N. Dheilly , D. Planson, P. Brosselard, J. Hassan, P. Bevilacqua, D. Tournier, C. Raynaud and H. Morel, Materials Science Forum, 615-617 (2009) 703.

3.3 kV-10A 4H-SiC PiN diodes
P.   Brosselard, N. Camara, J. Hassan, X. Jordà, J.P. Bergman, J. Montserrat and J. Millán, Materials Science Forum 600-603 (2009) 991.

2008

In-situ surface preparation of nominally on-axis 4H-SiC substrates
J. Hassan, J.P. Bergman, A. Henry and E. Janzén, J. Crystal Growth 310 (2008) 4430.

On-axis homoepitaxial growth on Si-face 4H-SiC substrates
J. Hassan, J.P. Bergman, A. Henry and E. Janzén, J. Crystal Growth 310 (2008) 4424.

Schottky versus bipolar 3.3 kV SiC diodes
A. Pérez-Tomás, P. Brosselard,
J. Hassan, X. Jordá, P. Godignon, M. Placidi, A. Constant, J Millán and J.P. Bergman, Semicond. Sci. Tech. 23 (2008) 125004.

SiC varactors for dynamic load modulation of high power amplifiers
M. Südow, H. M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P. Nilsson, J. Hassan, A. Henry, E. Janzén, R. Jos, and N. Rorsman, IEEE Elec. Device Lett. 29 (2008) 728.

The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
P. Brosselard, A.P. Tomas, N. Camara,
J. Hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan and J.P. Bergman, Proceedings of the 20th ISPSD & ICs (2008) 237.
ISPSD & ICs 2008,
Orlando, Florida, USA.

Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes
P. Brosselard, M. Berthou, J. Hassan, X. Jordá, J.P. Bergman, J. Montserrat, P. Godignon and J. Millán, IET Seminar Digest, (2008) 2.
ISPS 2008, Prague, Czech Republic.

Improved SiC epitaxial material for bipolar applications
J.P. Bergman,
J. Hassan, A. Ellison, A. Henry, P. Brosselard and P. Godignon, Mater. Res. Soc. Symp. Proc. 1069 (2008) 141.

2007

Defects and carrier compensation in semi-insulating 4H-SiC substrates
N.T. Son, P. Carlsson, J. Hassan, B. Magnusson, E. Janzén, Phys. Rev. B, 75 (2007) 155204.

Characterization of epitaxial defects in 4H-SiC
J. Hassan, J.P. Bergman, P.J. McNally and E.Janzén
ICSCRM2007, Otsu, Japan

Study of bipolar degradation in PiN-diodes grown on on-axis 4H substrates
J. Hassan, J.P. Bergman, P. Brosselard and P. Godignon
ICSCRM2007, Otsu, Japan

Growth and photoluminescence study of aluminium doped SiC epitaxial layers
H. Pedersen, A. Henry, J. Hassan, J.P. Bergman and E. Janzén, Materials Science Forum 556-557 (2007) 97.

CVD of 6H-SiC on non-basal quasi polar faces
Y. Shishkin, S.E. Saddow, S.P. Rao, O. Kordina, I. Agafonov, A. Maltsev, J. Hassan and A. Henry, Materials Science Forum 556-557 (2007) 73.

Thick epilayer for power devices
A. Henry,
J. Hassan, H. Pedersen, F.C. Beyer, J.P. Bergman, S. Andersson, E. Janzén and P. Godignon, Materials Science Forum 556-557 (2007) 47.

4H-SiC epitaxial layers grown on on-axis Si-face substrate
J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally and E. Janzén, Materials Science Forum 556-557 (2007) 53.

2006

Thick silicon carbide homoepitaxial layers grown by CVD techniques
A. Henry, J. ul Hassan, J.P. Bergman, C. Hallin, E. Janzén, Chemical Vapor Deposition, 12 (2006) 475.

Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
J. Hassan, A. Henry, J.P. Bergman and E. Janzén, J. Thin Solid Films 515 (2006) 460.

Divacancy in 4H-SiC
N.T. Son, P. Carlsson, J. ul Hassan, and E. Janze´n, T. Umeda and J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, and H. Itoh, Phys. Rev. Lett. 96 (2006) 055501.

2005

Structural instabilities in the growth of SiC crystals
R.R. Ciechonski, M.Syväjärvi, J. ul-Hassan and R. Yakimova, J. Crystal Growth 275 (2005) 461-466.

Properties of thick n- and p-type epitaxial layers of 4H-SiC grown by Hot-wall CVD on off- and on-axis substrates
J. Hassan, C. Hallin, J.P. Bergman and E. Janzén, Materials Science Forum 527-529 (2005) 183.

Temperature and intensity dependent carrier lifetime measurements on n- and p-type 4H-SiC measured by different experimental techniques
J. Hassan, K. Neimontas, J.P. Bergman and E. Janzén
ICSCRM 2005, Pittsburgh, USA.

SiC and III-nitride growth in a Hot-wall CVD reactor
E. Janzén, J.P. Bergman, J. Hassan, Ö. Danielsson, U. Forsberg, C. Hallin, A. Henry, I.G. Ivanov, A. Kakanakova-Georgieva and P. Persson, Materials Science Forum 483-485 (2005) 61.


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Last updated: 02/13/12