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Summary of Jawad ul Hassan's activities

Research

My research is mainly focused on the development of CVD growth processes of SiC for high power electronic devices. It includes standard and chlorinated epitaxial growth processes on vicinal and on-axis substrates and epilayer characterization using structural, optical and electrical techniques. I am also developing epitaxial growth of graphene on SiC substrates using low temperature sublimation either in vacuum or in Ar ambient under controlled pressure. The main idea is to minimize uncontrolled reconstruction of SiC and to develop wafer scale controlled growth of graphene layers with uniform thickness and high charge carrier mobility. Additionally, I am focusing on the hydrogen intercalation process to enhance charge carrier mobility in graphene layers.

Selected publications

Complete list of peer-reviewed articles at researcherID.com (ISI).

Current supervision of students

 PhD students

Current teaching

PhD Courses
  • Defects and dislocations in semiconductors, course responsible
Jawad ul Hassan
Associate Professor (Docent)

Senior Lecturer

CONTACT

E-mailjawul@ifm.liu.se
Phone: +46 (0)13 28 23 80

Office
Room N417 (Physics Building)

Address
Semiconductor Materials, IFM
Linköping University
SE-58183
Linköping, Sweden

MISCELLANEOUS

Links
researcherID.com
 


Responsible for this page: Fredrik Karlsson
Last updated: 10/07/16