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Summary of Einar Sveinbjörnsson's activities


1. Defect engineering in SiC devices

The aim  is to develop methods to significantly improve minority carrier lifetime and reduce surface recombination in Si face 4H-SiC epilayers. Bipolar SiC devices are today severely hampered by the short carrier lifetime due to recombination centers (defects) in epilayers. Currently we work mainly with high temperature oxidation and subsequent annealing of silicon carbide which has a strong impact on the carrier lifetime.

2. Electrical properties of graphene grown on SiC

Here we investigate the electronic properties of graphene for possible microwave transistor applications. The focus is on physical understanding of the interaction of charge carriers in graphene with the underlying substrate and the gate dielectric used for top-gated devices.

Selected publications

  • Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interfacer
    E. Ö. Sveinbjörnsson, F. Allerstam, P. G. Hermannsson and S. Hauksson
    Materials Science Forum 740-742, pp. 749-752 (2013)
  • Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
     I. D. Booker, J. Hassan, A. Hallén, E. Ö. Sveinbjörnsson, O. Kordina, J. P. Bergman
    Materials Science Forum 717-720, pp.285-288 (2012)

Complete list of publications articles at Google Scholar.

Current supervision of students

 PhD students

Current teaching

PhD Courses
  • Electrical characterization of semiconductor materials and devices (5 ECTS)
Einar Sveinbjörnsson

Adjunct Professor


E-mail: einsv@ifm.liu.se
Phone: +46 (0)13 288936

Room P327 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden



Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14