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Summary of Daniel Nilsson's activities


My research focus on the MOCVD growth of high-Al-content AlGaN alloys for the development of efficient deep UV emitting devices. AlGaN is a semiconductor with a very wide band-gap allowing manufacturing of UV emitting optoelectronic devices with an emission wavelength between 200-360 nm. Today it is very difficult to manufacturing efficient UV-LEDs due to poor material quality and difficulties to control the n- and p-type conductivity by intentional doping. Therefore these topics have been addressed and investigated in my research.

The figure shows a  CL spectrum of heteroepitaxial AlN with an AFM image of  homoepitaxial AlN in the insert. The AlN was grown at high temperature (1400 °C ) using a hot-wall MOCVD. (Presented at ISGN9)

Selected publications & conference contributions

  • Negative-U behavior of the Si donor in AlGaN
    X. T. Trinh, D. Nilsson, I. G. Ivanov, E. Janzén, A. Kakanakova-Georgieva, and N. T. Son
    Applied Physics Letters 103, 042101 (2013)

  • The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
    A. Kakanakova-Georgieva, D. Nilsson, X. T. Trinh, U. Forsberg, N. T. Son, and E. Janzén
    Applied Physics Letters 102, 132113 (2013)     (pdf available)
  • Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
    A. Lundskog, C.W. Hsu, D. Nilsson, K.F. Karlsson, U. Forsberg, P.O. Holtz, and E. Janzén
    Journal of Crystal Growth 363, 287 (2013)     (pdf available)
  • High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
    A. Kakanakova-Georgieva, D. Nilsson, and E. Janzén
    Journal of Crystal Growth 338, 52 (2012)      (pdf available)
  • Mg-doped AlGaN layers grown by hot-wall MOCVD with low resistivity at room temperature
    A. Kakanakova-Georgieva, D. Nilsson, M. Stattin, U. Forsberg, Ĺ. Haglund, A. Larsson, and E. Janzén
    Physica Status Solidi RRL 4, 311 (2010)
  • Towards high temperature homoepitaxial growth of AlN using hot Wall MOCVD 
    D. Nilsson, A. Kakanakova-Georgieva, J-T. Chen, U. Forsberg, and E. Janzén
    Invited talk at “the 9th international conference on nitride semiconductors” (ISNC9), Glasgow, UK, 10-15 Juli 2011

Supervision of master students

  • Sin Shou (2013): Optimizing the MOCVD process of AlN-on-SiC layered structures


  • TFYA11 Modern Physics (6 ECTS) for Y3 (2009-2013)
Daniel Nilsson


Host: Erik Janzén


E-mail: danni@ifm.liu.se
Phone: +46 (0)13 28 24 76

Room N413 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden



Responsible for this page: Fredrik Karlsson
Last updated: 02/11/14