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Summary of Chamseddine Bouhafs's activities


My research is focused on growth and studies of fundamental properties of epitaxial graphene on SiC using high-temperature sublimation. The major goal is to develop electronic grade graphene with homogeneous thickness and electronic properties over large area.  I am studying the effect of growth conditions, substrate polytype and polarity, as well as surface treatment on electronic transitions, Landau levels and free-charge carrier mobility and density in epitaxial graphene. In my work I use extensively spectroscopic ellipsometry, Raman scattering spectroscopy and the unique Optical Hall effect.

Quantization of single layer graphene band structure to Landau levels in the presence of magnetic field. Selection rules of the Landau level transitions in single layer graphene showing √B dependence.
Infrared Optical Hall effect Mueller matrix difference data taken at different magnetic fields on few-layer graphene grown on the C-face of 3C-SiC(111). Landau level transitions (A..D) show √B dependence indicating stack of decoupled monolayers.

Selected publications & conference contributions

  • Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
    C. Bouhafs
    , V. Darakchieva , I. L. Persson , A. Tiberj , P. O. Å. Persson , M. Paillet , A. Zahab, P. Landois , S. Juillaguet , S. Schöche , M. Schubert , R.Yakimova
    Journal of Applied Physics 117, 085701 (2015)
  • Morphological and electronic properties of epitaxial graphene on SiC
    R. Yakimova, T. Iakimov, G. R. Yazdi, C. Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert, and V. Darakchieva
    Physics B, 439, 59 (2014)

Supervision of master students

  • Ingemar Persson: "Interface investigation of graphene grown on carbon-terminated 4H-SiC by cross-sectional transmission electron microscopy"
  • Chun Yi Chen: "Spectroscopic ellipsometry study of epitaxial graphene and effect of oxygen treatment"
Chamseddine Bouhafs

PhD student


E-mail: chabo@ifm.liu.se 
Phone: +46 (0)13 28 89 83

Room K201 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden



Responsible for this page: Fredrik Karlsson
Last updated: 03/05/15