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Summary of Carl Hemmingsson's activities


My interest and work is focused on growth and defect studies of III-nitrides.  Currently, I am developing growth processes of thick GaN substrate material and nanostructures using halide vapour phase epitaxi (HVPE). Using advanced simulation software (CFD-ACE), we are also developing models in order to predict the outcomes of our experiments. The grown material properties are studied by several characterization techniques such as x-ray diffraction (XRD), transmission and scanning electron microscopy  (TEM and SEM), cathodoluminescence (CL), photoluminescence (PL) and electrical characterization (CV, DLTS and Hall).

An improved quality of the GaN substrate material is necessary in order to fabricate the next generation efficient and reliable optoelectronic and electronic devices such as near UV Laser Diodes, high brightness LEDs for general lighting and high power, high frequency transistors.

Selected publications

Complete list of peer-reviewed articles at researcherID.com (ISI).

Current supervision of students

 PhD students

List including former students... 

Current projects and funding

  • VR: Bulk Growth of GaN with Halide Vapor Phase Epitaxy, Principal investigator (2011-2013)

Current teaching

Undergraduate Courses
  • TFYY68 Engineering Mechanics (6 ECTS) for students in the program Computer Science and Engineering, examiner

Other teaching related activities

  • Deputy in the program board for Computer and Media Technology at Linköping University.
Carl Hemmingsson
Associate Professor (Docent)

Senior Lecturer


E-mail: cah@ifm.liu.se
Phone: +46 (0)13 28 26 27

Room K206 (Physics Building)

Semiconductor Materials, IFM
Linköping University
Linköping, Sweden


Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14