Resolving the doping limitations in aluminum gallium nitride
In short: We achieve better understanding of the complex growth phenomena underlying the deposition of the ultimate wide band gap semiconductor AlN and high-Al-content AlGaN alloys; and related doping by silicon (Si). We contribute essential new knowledge in explaining the notorious sharp increase of resistivity of Si-doped high-Al-content AlGaN alloys by corroborating aspects of material growth with electron paramagnetic resonance measurements.
Aluminum nitride (AlN) is a previously well-established and valued insulator and ceramic material. However, AlN was demonstrated to give rise to light emission by achieving a successful doping of crystalline quality material (Nature, 2006).
By that, the frontier of semiconductor materials expanded well into the deep-ultraviolet region. There is a target to achieve intense emission at certain specific wavelengths of 250-270 nm in the deep-ultraviolet region. This specific emission is particularly damaging for the DNA of various microorganisms, and thus can be applied for the distraction of bacteria, viruses, fungi. The deep-ultraviolet diodes based on aluminum nitride are intended for implementation in portable units for water/surface/air disinfection, and being of great social impact.
Details of our research are described in the following journal articles:
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
J. Phys. D: Appl. Phys. 49, 175108 (2016)
n-type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
J Mater Chem C, 4, 8219 (2016)
On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1)
Phys. Status Solidi B 252, pp. 1306-1310 (2015)
Stable and metastable Si negative-U centers in AlGaN and AlN
Applied Physics Letters 105, 162106 (2014)
- Swedish Research Council (VR).
- Linköping Linnaeus Initiative for Novel Functional Materials (VR)
- Swedish Energy Agency
- Knut and Alice Wallenberg Foundation (KAW).
- Swedish Governmental Agency for Innovation Systems (VINNOVA)
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Last updated: 09/09/16