Research Area - SiC
Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. Its high breakdown electric field, high saturated drift velocity and high thermal conductivity are some of the most important characteristics to understand why SiC has superior electrical properties compared to silicon, and make it very attractive for power devices especially at high voltages and high frequency. The gain in reduced device sizes, reduced cooling requirements, and especially in improved energy efficiency for AC/DC conversion are a very important reasons to keep working in improving the material quality. Yet several issues still limit its full employment in all its potential applications, and many more steps have thus to be done for its complete success.
Responsible for this page: Fredrik Karlsson
Last updated: 03/20/13