(Prof. Erik Janzen, Asst Prof. Urban Forsberg, Anders Lundskog, Jr-Tai Chen)
- Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature.
We reported on the hot-wall MOCVD growth of Mg-doped AlxGa1-xN layers with an Al content as high as x ~ 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained, indicating an enhanced p-type conductivity compared to published data for AlxGa1-xN layers with a lower Al content of x ~ 0.70 and a room temperature resistivity of about 10 kΩ cm. Despite the semi-insulating character of such Mg-doped high-Al-content AlxGa1-xN layers at room temperature, they could still perform as efficient p-transport layers in deep-UV light-emitting diodes, as a very thin layer (< 10 nm) is needed. The enhanced p-type conductivity is believed to be due to reduced compensation by native defects achieved by growth conditions enabled by the distinct hot-wall MOCVD system (Phys. Status Solidi RRL 4 (2010) 311).