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Research Area - Nanostructrures

Low dimensional semiconductors, such as quantum wells, quantum wires and quantum dots, have been studied by our group for a long time. During the last years, we have focused our investigations on structures with the lower dimensionality, preferably zero-dimensional (0D) quantum dot and one-dimensional (1D) quantum wire structures. From year 2006, we have a 5-year program on nitride based nanostructures (Nano-N) funded within the SSF Nano-X program. The investigations are focused on InGaN/GaN/AlGaN quantum dot and wire materials suitable for optoelectronics operating in the blue/UV range.

The lowering of the dimensionality of the semiconductor structures provides significant advantages for various applications. For instance, a laser structure based on a quantum dot structure will theoretically exhibit superior properties in comparison with a laser based on a conventional double heterostructure, e.g. a lower threshold current, less temperature dependence, higher speed and narrower gain spectrum. These merits are expected to become reinforced as the dimensionality of the quantum structure is reduced. For instance, the density of states is enhanced in a 1D (quantum wire) and further enhanced in a 0D (quantum dot) system relative to higher dimensions.

The aim is to develop materials appropriate for applications within optoelectronics operating in the blue/UV range based on wide bandgap materials, such as the InGaN/GaN/AlGaN and ZnO materials systems.

  • Nitride Based Quantum Dots and Nano Wires
  • ZnO Nano Structures
  • InGaAs Based Quantum Dots
  • Other III-V and Si Based Nano Structures
  • Time Resolved Characterization of Nano Structures


Responsible for this page: Fredrik Karlsson
Last updated: 03/20/13