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Research Areas


SiC was discovered more than 100 years ago. In recent thirty years, the understanding and science of silicon carbide has evolved, and both material and applications are available on the market today. SiC is a semiconductor that sustains higher frequencies, powers and temperatures than conventional silicon. This leads to smaller electronics and reduced power loss, with applications in electric power distribution and power electronics in hybrid cars. 

Our division has had a leading position in the SiC research for about 20 years, and significant efforts within the division are devoted to develop high quality SiC for devices using different chemistries, e.g. the chlorinated chemistry for very high growth rates. One ambition is to control the involved isotopes and thereby improve the thermal properties of SiC.

The III-nitrides (GaN, InN, AlN and their alloys) is a class of materials that in addition to their outstanding light emitting properties also exhibit extremely good high-frequency characteristics. A project within the division aims to develop the nitride material for high electron mobility transistors (HEMTs), with applications in the next generation high-speed data transmission systems. Another challenge is to develop a III-nitride based light emitting material for deep ultraviolet lasers.

We have a long experience of these materials, and our activities today includes bulk and epitaxial growth, as well as advanced material characterization. The aim is to understand the mechanisms that generate and control the optical, thermal and transport properties of the III-nitrides materials and their relation to the final device performance.

Characterization and spectroscopy of semiconductor nanostructures has for a long time been one major activity in our division. This includes optical studies of properties and phenomena in quantum wells, wires and dots structures, in material systems such as III-nitrides and III-arsenides. We are currently fabricating and investigating III-nitride based single-photon emitters for their potential applications in the area of quantum information. Zinc oxide-based nanostructures are also developed and investigated.

Graphene is today one of the most dynamic research topics. Graphene is a light, transparent, flexible and conducting material that reveals many curious properties, and its discovery was rewarded the Nobel Price in Physics 2010. The division has recently gained the attention for a high temperature fabrication process of epitaxial graphene on SiC. The exceptionally high carrier mobility in graphene makes it a promising material for new devices operating up to the terahertz frequency range. The current activities include development of large scale uniform graphene on SiC using both the high temperature graphene process and conventional CVD, as well as advanced characterization of pure and functionalized graphene layers. 

Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14