Laboratories and Resources

Material Growth

• We have since more than 20 years had a strong activity on SiC material growth (Anne). This has included both bulk growth using sublimation or High Temperature CVD (HTCVD), or epitaxial growth focussing on Hot Wall epitaxy (HWCVD) for transistor applications or the Fast Sublimation Growth Process (FSGP) for optoelectronic applications.
• In our group we activities of bulk Nitride growth using HVPE (Carl) . We also have a strong activity of epitaxial growth of nitrides using our HotWall CVD (Urban) experience, either for development of deep UV-emitters or high-frequency transistors.  
• Graphene (Erik) is a promising material for future electronic applications. It consist of a single atomically well structured carbon layer, and its discovery was rewarded the Nobel Price in 2010. At LiU we can produce  high quality graphene layers on SiC substrates either by a method developed at LiU, the High Temperature Graphene Process, or standard Hot Wall CVD.
• We have also activities on Novel Semiconductor (Anne) materials such as Boronnitride (BN), Zink-Oxide (ZnO) and Titanium-Oxide (TiO) as well as new growth techniques such as e.g. plasma-assisted growth of SiC.

Material Characterisation

• Optical characterisation (peder) of defects and recombination processes in semiconductors has since long been a strong actvity in our group.  We have today world-wide unique resources, experience and competence regarding photoluminescence (PL), Time Resolved PL and PL excitation spectroscopy, of specially wide-bandgap semiconductors. 
• Semiconductor research has in recent years focused on nanoscale phenomena (per-olof), such as properties of quantum wells, wires and dots. We have in consequently in recent years developed techniques such as u-Pl, Time-resolved u-PL and SNOM. 
• The combination of optical excitation with magnetic and micowave fields (son), provides excellent possibilities to study symmetry, properties and identities of defects in the material. We have today state-of-the-art facilities for EPR, CMDR and ODMR studies of defects in Semiconductors.  
• In our laboratories we have excellent facilities for Electrical Characterisation (peder) of material or processed devices. This includes a high quality probe station with Current-Voltage (IV), Capacitance-Voltage (CV), deep level transient spectroscopy (DLTS), minority capacitance spectroscopy (MCTS) and Hall Effect  measurements.