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The Semiconductor Materials Division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene. The goal is to resolve fundamental and application-motivated issues of interest for Swedish and European industries.

The Semiconductor Materials Division belongs to the scientific area of Material Physics, which is the largest research unit of the department and it is internationally recognized as a strong research environment. The research activities within the division cover a broad spectrum dominated by basic research. The projects are mainly funded by Swedish and European agencies, partly with industrial collaboration. There is a strong international cooperation within most research projects.


Current research activities

  • Growth, simulation and characterization of epitaxial films and bulk crystals.
  • Investigations of crystal defects and doping.
  • Development and studies of nano- and heterostructures.

The growth is based on chemical vapor deposition (CVD) or sublimation techniques while the characterization includes surface and interface properties as well as structural-, optical- and transport properties probed by techniques such as photoluminescence spectroscopy, magnetic resonance, ellipsometry and microscopy.

High frequencies and high power

Silicon carbide (SiC) is a semiconductor material that sustains higher frequencies, powers and temperatures than conventional silicon. This leads to smaller electronics and reduced power loss, with applications in electric power distribution and power electronics in hybrid cars. Significant efforts within the division are devoted to develop high quality SiC for devices. One ambition is to control the involved isotopes and thereby improve the thermal properties of SiC.

The III-nitrides is a class of materials that also exhibit extremely good high-frequency characteristics, in addition to their outstanding light emitting properties. A project within the division aims to develop the nitride material for high electron mobility transistors,  with applications in the next generation high speed data transmission systems.

The division has recently gained attention also for graphene, in particular for a high temperature fabrication process of graphene on SiC. The exceptionally high carrier mobility in graphene makes it a promising material for new devices operating up to the terahertz frequency range.

Novel light sources

The optically efficient III-nitrides have enabled new and energy efficient light sources, such as LED-lamps and blue lasers. Within the division, there is a constant activity for deepening the understanding of the III-nitrides and for improving the material quality in order to further enhance its light emitting performance.

One challenge tackled by the division is to develop a III-nitride based light emitting material for deep ultraviolet lasers. The disinfecting properties of ultraviolet light can be utilized for water cleaning. III-nitride based single-photon emitters are fabricated and investigated for their potential applications in the area of quantum information. Other optically efficient materials, e.g. zinc oxide (ZnO), are also studied.   

Responsible for this page: Fredrik Karlsson
Last updated: 02/09/14