Semiconductor Technology (TFYA39)

 


 

 

 

 

 

 

 

Course Information

Lab Locations

Lab Manuals (pdf)

  • Device Measurements
  • Device Simulations A
  • Device Simulations B

Supplementary Material (pdf):

Problems for problem solving sessions

 

 

 

GENERAL

  • Course Code:
    TFYA39 Semiconductor Technology / Halvledarteknik, Y3, D3 and IT3, 6.0 p (ECTS credits)
  • Required Background:
    Knowledge in elementary physics - especially solid-state physics, atom physics, quantum mechanics as well as statistical mechanics. The students lacking this knowledge can somewhat compensate for this by intensively studying Sections 1.1-1.2 and Chapter 2 of the main textbook. 
  • Goal:
    The main goal of this course is to convey an understanding of concepts related to solid-state physics and their application to semiconductor devices. The emphasis of the lectures will be on a qualitative discussion and analysis of phenomena arising in semiconductors rather than on a quantitative formula training. However, considerable mathematical ground has to be covered in order for the students to link phenomena to mathematics, which inevitably will provide the only formal tools for us to work in the area of semiconductor technology.
           Upon a successful fulfillment of the course goal, it is the hope of the instructor that, first, the students never again active in this field will still forever understand how, for example, transistors operate (and appreciate that knowledge). Secondly, hopefully the student pursuing a career within this area can effortlessly return to her/his course book and, by playing by ear, calculate whatever needed for her/his work. 
  • Textbooks:
    Main textbook:
    Ben G. Streetman and Sanjay Banerjee, "Solid State Electronic Devices", 6th edition, Prentice-Hall International Editions (other editions are also acceptable)

As substitute for the main textbook the following textbook can be recommended:
-Donald A. Neamen "Semiconductor Physics and Devices", McGraw - Hill.

- S. M. Sze "Semiconductor Devices", Wiley

STAFF

  • Instructor:
    Irina Buyanova, Professor
    Materials Science, Dept. of Physics (IFM)
    Office E209, Fysikhuset
    Tel: 013-281745, E-mail: irb@ifm.liu.se
  • Assistants:
    • Problem solving sessions:

        Yuqing Huang, PhD student

        Office E212, Fysikhuset

        Email: yuqhu58@ifm.liu.se

    • Device Simulation labs:

Mattias Jansson, PhD student,

Office E210, Fysikhuset

Tel:  013-285775,  Email: matja82@ifm.liu.se

    • Device Measurements lab:

        Yuqing Huang, PhD student

        Office E213, Fysikhuset

        Tel:  013-282485,  Email: yuqhu58@ifm.liu.se

LABORATORY EXERCISES

There are three compulsory laboratory exercises in this course; Device Measurements, Device Simulations A and Device Simulations B. In the measurement laboratory exercise, diodes and transistors are characterized by using curve tracers for measurement. Note that this lab has got preparatory exercises, which you need to complete prior to the actual exercise. The first of the two simulation laboratory exercises deals with short-channel effects in MOS transistors, whereas the second illustrates the design procedure of a MOS-transistor.

Sign-up lists for the labs are posted on the message board "Lab-anmälan" at the corner of the corridors Ampere and Einstein, near IFM Kursexpedition in the Fysikhuset (F-house).

EXAMINATION

A number of problems related to the content of the course are to be solved outside the classes. Four Home Problem Sets are given below. The solutions to each Home Problems Set should be handed in to the instructor - for the latest dates, see Deadlines. If any solution is overdue, no points are awarded for that particular problem. Cooperation between students is encouraged, however, plagiarism is not accepted. This means that all homeworks must be solved individually.
       To ensure that no student is given the wrong grade, including undeservedly good as well as undeservedly bad grades, the home problems will be supplemented by an individual oral exam that will take place in the examination period succeeding the course. During 30 minutes the knowledge of each student will be examined by the instructor. Hopefully all oral examinations can take place during two days only - the dates will be decided during the course.

       The final grade given, that is fail, 3, 4 or 5, will be based on both the home problems and the oral examination.

Home Problem Sets and Deadlines: (Note that all deadlines are strict, i.e. homeworks must be handed before 17.00 on the specified date)

  • Set 1 (pdf) - Basic semiconductor basics, Deadline Nov.9
  • Set 2 (pdf) – Junctions, Deadline Nov.16
  • Set 3  (pdf) – Transistors, Deadline Nov.27
  • Set 4 (pdf) - Optoelectronic devices, Deadline Dec.4

SCHEDULE  

Occasion
L = Lecture
Le = Problem solving

Content (approximate)

L1:

Introduction to the course. Practical issues
Basic semiconductor physics: Electronic structure

Chapters 3.1-3.2

L2:

Basic semiconductor physics: Transport properties

Chapters 3.3-3.5; 4.41-4.4.2

L3:

Basic semiconductor physics: Generation and recombination.

Chapters 4.1-4.3,  4.4.3-4.4.4

Growth of semiconductors: Basic ideas. Fabrication of junctions

Chapters 1.3-1.4, 5.1-5.1.4

Le4:

Problem solving on Basic semiconductor physics

L4:

The p-n junction

Chapters 5.2-5.4, 5.5.3-5.6

L5:

Metal-semiconductor junction.

Chapter 5.7

Field-effect transistors: Junction FET, MESFET

Chapters 6.2-6.3

Le2:

Problem solving on junctions

L6:

MOS transistor: Basic ideas

Chapters 6.4.1-6.4.4

L7:

MOS transistor: Advanced properties and scaling effects. Novel trends.

Chapters 6.4.7-6.5.2, 6.5.4-6.5.7, 6.5.9-6.5.12

Le3:

Problem solving on MOS Transistors

L8:

The bipolar junction transistor: Basic ideas

Chapters 7.1-7.4

L9:

The bipolar junction transistor: advanced properties.

Chapters 7.6-7.7, 7.9
Optoelectronics: Overview

Chapter 8

Le4:

Problem solving on bipolar junction transistors

L10:

Optoelectronics: Overview (continue)

Chapter 8

Le5:

Problem solving on Optoelectronic devices

L11:

 Integrated circuits: Overview.

Chapter 9

Novel semiconductor technologies:  Nanotechnology. 

L12:

Novel semiconductor technologies: 
Spin electronics.

Carbon-based electronics.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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Informationsansvarig: Irina Buyanova     E-post: irb@ifm.liu.se    Telefon: 013-281745