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Halogen-based CVD chemistry for electronic grade silicon carbide

Methyltrichlorosilane, SiCl3CH3 (MTS) a singel precursor for Cl-based SiC CVD

 

Silicon carbide is, apart from being a hard material, a semiconductor material with excellent material properties such as wide band gap, high electric breakdown field, high saturated electron velocity, and high thermal conductivity. This makes it a highly attractive material for electronic devices for high-power, high-frequency and high temperature applications. Power electronics based on SiC can greatly reduce the power losses in most generation and distribution systems for electrical energy.

Typically homoepitaxial growth of SiC is done using CVD with silane (SiH4) and light hydrocarbons as silicon and carbon precursors, respectively. The typical growth rate for SiC homoepitaxy is 5-10 µm/h. In order to increase the growth rate, the amount of precursors in the growth process must be increased, however this is normally problematic on account of the homogeneous nucleation in the gas phase as a result of the high partial pressures of the precursors. For the SiC epitaxial growth process the main problem is the formation of silicon droplets that fall down onto the substrate and badly affect the growing epitaxial layer making it useless for devices.

In order to circumvent the problem with the silicon droplets, a substance that binds stronger to silicon than silicon binds to itself, yet is easy to detach when the silicon atom incorporates into the crystal can be added to the gas mixture. The best candidate is to be found among the halogen atoms and it boils down to that chlorine is the best choice for several reasons. The chloride based SiC epitaxial growth has today reached a very high level of refinement sporting growth rates as high as 200 µm/h and doping levels in the low 1013 cm-3 range. The field was recently review in Chemical Reviews.

The current research project on halogen-based CVD chemistry for SiC, done in close collaboration with the Semiconductor Materials group at Linköping University is focused on developing a CVD processes for growing SiC bulk crystals using halogen-based chemistry for power devices based on SiC and of isotopically pure 28Si12C by using isotopically pure precursors and novel CVD solutions.

 

Selected publications:

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

M. Yazdanfar, Ö. Danielsson, E. Kalered, P. Sukkaew, O. Kordina, D. Nilsson, I. G. Ivanov, L. Ojamäe, E. Janzén, H. Pedersen
Chemistry of Materials 27, 793 (2015) (FULL OPEN ACCESS)

Finding the optimum chloride-based chemistry for chemical vapor deposition of SiC
M. Yazdanfar, Ö. Danielsson, O. Kordina, E. Janzén, H. Pedersen
ECS Journal of Solid State Science and Technology 3, P320 (2014) (FULL OPEN ACCESS)

On the use of methane as carbon precursor in Chemical Vapor Deposition of silicon carbide
M. Yazdanfar, H. Pedersen, P. Sukkaew, I. G. Ivanov, Ö. Danielsson, O. Kordina, E. Janzén
Journal of Crystal Growth 390, 24 (2014)
(OPEN ACCESS VERSION)
 

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
M. Yazdanfar, I. G. Ivanov, H. Pedersen, O. Kordina, E. Janzén
Journal of Applied Physics 113, 223502 (2013)
(OPEN ACCESS VERSION)
 

Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
M. Yazdanfar, P. Stenberg, I. D. Booker, I. G. Ivanov, O. Kordina, H. Pedersen, E. Janzén
Journal of Crystal Growth 380, 55 (2013)

 

Chloride-based CVD growth of Silicon Carbide for electronic applications
H. Pedersen, S. Leone, O. Kordina, A. Henry, S. Nishizawa, Y. Koshka, E, Janzén
Chemical Reviews 112, 2434 (2012)



Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
H. Pedersen, F. C. Beyer, A. Henry, E. Janzén
Journal of Crystal Growth 311, 3364 (2009)


Donor incorporation in SiC epilayers growth at high growth rate with chloride-based CVD
H. Pedersen, F. C. Beyer, J. Hassan, A. Henry, E. Janzén
Journal of Crystal Growth 311, 1321 (2009)


Growth characteristics of chloride-based SiC epitaxial growth
H. Pedersen, S. Leone, A. Henry, A. Lundskog, E. Janzén
physica status solidi (RRL) 2, 278 (2008)


Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
H. Pedersen, S. Leone, A. Henry, V. Darakchieva, P. Carlsson, A. Gällström, E. Janzén
physica status solidi (RRL) 2, 188 (2008)


Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
H. Pedersen, S. Leone, A. Henry, F. C. Beyer, V. Darakchieva, E. Janzén
Journal of Crystal Growth 307, 334 (2007)


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Last updated: 03/19/15