High Power Pulsed Plasma Enhanced Chemical Vapor Deposition (HiPP-PECVD)
A chemical vapor deposition (CVD) process that uses the energy from a plasma discharge, rather than thermal energy supplied by high process temperature, to activate the gas phase chemistry is denoted plasma enhanced CVD (PECVD) or alternatively plasma activated CVD (PACVD). In a PECVD process, free electrons are available for the decomposition of the precursor molecules which opens up new low temperature decomposition routes to form species active for thin film deposition which means that low substrate temperatures can be achieved during deposition. This enables deposition on temperature sensitive substrates and the use of precursors with low reactivity.
The HiPP-PECVD research is focused on fundamental development and understanding of HiPP-PECVD which is done by applying very high power (kW) in very short pulses (µs) with low overal duty factor (a few %). This gives a plasma where a higher amount of the atoms or molecules in the plasma has been ionized. The research is done in close collaboration with Universite Paris Sud, France
PECVD is also used and developed in the Low temperature CVD project for boron carbide.
Influence of pulse power amplitude on plasma properties and film deposition in high power pulsed plasma enhanced chemical vapor deposition
D. Lundin, J. Jensen, H. Pedersen
Journal of Vacuum Science and Technology A 32, 030602 (2014)
(OPEN ACCESS VERSION)
High Power Pulsed Plasma Enhanced Chemical Vapor Deposition: A Brief Overview of General Concepts and Early Results
D. Lundin and H. Pedersen
Physics Procedia 46, 3 (2013) (FULL OPEN ACCESS)
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Last updated: 03/19/15